Patent US6602720B2 successfully refreshed from Google Patents.
US6602720B2
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Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same
Assignee: Sharp Laboratories of America Inc
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Filing: 2001-03-28
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Granted: 2003-08-05
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Expires: 2021-03-28
Abstract
Abstract A ferroelectric transistor gate structure with a ferroelectric gate and a high-k insulator is provided. The high-k insulator may serve as both a gate dielectric and an insulator to reduce, or eliminate, the diffusion of oxygen or hydrogen into the ferroelectric gate. A method of forming the ferroelectric gate structure is also provided. The method comprises the steps of forming a sacrificial gate structure, removing the sacrificial gate structure, depositing a high-k insulator, depositing a ferroelectric material, polishing the ferroelectric material using CMP, and forming a top electrode overlying the ferroelectric material.
Inventors
- 👤 Sheng Teng Hsu
- 👤 Fengyan Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10P; H10P10/00; H10D30/00; H10D30/60; H10D30/701; H10D64/01; H10D64/017; H10D64/031; H10D64/033; H10D64/68; H10D64/689; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69395; H10P14/69398; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
108 words
A method of fanning a ferroelectric transistor structure on a substrate comprising the steps of: a) depositing and patterning a layer of sacrificial gate material, whereby a sacrificial gate is formed; forming an oxide overlying the sacrificial gate; and polishing the oxide to expose the sacrificial gate; b) removing the sacrificial gate structure to form an open gate region; c) depositing a high-k material over the substrate, partially filing the open gate region, whereby the remaining depth of the open gate region is left open; and d) depositing a ferroelectric material over the high-k material to a thickness greater than the remaining depth of the open gate region.
Claim 2
Independent Claim
108 words
A method of fanning a ferroelectric transistor structure on a substrate comprising the steps of: a) depositing and patterning a layer of sacrificial gate material, whereby a sacrificial gate is formed; forming an oxide overlying the sacrificial gate; and polishing the oxide to expose the sacrificial gate; b) removing the sacrificial gate structure to form an open gate region; c) depositing a high-k material over the substrate, partially filing the open gate region, whereby the remaining depth of the open gate region is left open; and d) depositing a ferroelectric material over the high-k material to a thickness greater than the remaining depth of the open gate region.
Claim 3
Dependent Claim
18 words
The method of claim 1 , wherein the layer of sacrificial gate material is silicon nitride or polysilicon.
Claim 4
Dependent Claim
17 words
The method of claim 1 , wherein the step of polishing is accomplished using chemical-mechanical polishing (CMP).
Claim 5
Dependent Claim
26 words
The method of claim 1 , wherein the step of depositing the high-k material is accomplished by chemical vapor deposition (CVD), pulsed CVD, sputtering, or evaporation.
Claim 6
Dependent Claim
36 words
The method of claim 1 , wherein the step of depositing the high-k material deposits ZrO 2 , zirconium silicate, Zr—Al—Si—O, HfO 2 , hafnium silicate, Hf—Al—O, La—Al—O, lanthanum oxide or Ta 2 O 5 .
Claim 7
Dependent Claim
26 words
The method of claim 1 , wherein the step of depositing the ferroelectric material is accomplished by metal-organic chemical vapor deposition (MOCVD), or chemical-solution deposition (CSD).
Claim 8
Dependent Claim
29 words
The method of claim 1 , wherein the step of depositing the ferroelectric material deposits PGO, PZT, SBT, SBO, SBTO, SBTN, STO, BTO, BLT, LNO or YMnO 3 .
Claim 9
Dependent Claim
15 words
The method of claim 1 , further comprising the step of forming a top electrode.
Claim 10
Dependent Claim
18 words
The method of claim 8 , wherein the top electrode is iridium, platinum, iridium oxide or platinum oxide.
Claim 11
Dependent Claim
24 words
The method of claim 8 , wherein the step of forming the top electrode is accomplished by depositing and patterning a top electrode layer.
Claim 12
Dependent Claim
21 words
The method of claim 8 , wherein the step of forming the top electrode is accomplished by using a damascene process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-08-04 | 2007-02-03 | 2007-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-08-04 | 2011-02-03 | 2011-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-08-04 | 2015-02-03 | 2015-08-05 | $7700.00 | Window Closed / Lapsed |