Patent US6599794B2 successfully refreshed from Google Patents.
US6599794B2
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US
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Method of manufacturing a semiconductor device and semiconductor device
Assignee: Fujitsu Semiconductor Ltd
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Filing: 2002-07-16
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Granted: 2003-07-29
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Expires: 2022-07-16
Abstract
Abstract A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.
Inventors
- 👤 Masahiro Kiyotoshi
- 👤 Kazuhiro Eguchi
- 👤 Masaaki Nakabayashi
- 👤 Fumihiko Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:58
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B53/00; H10B53/30; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
80 words
A method of manufacturing a semiconductor device comprising: forming a sacrificial layer including one or more conductive film on a semiconductor substrate; forming a cavity used as a template of electroplating in the sacrificial layer; growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical, pedestal, columnar or convex electrode can be formed; and removing the sacrificial layer so that the electrode can be exposed.
Claim 2
Independent Claim
80 words
A method of manufacturing a semiconductor device comprising: forming a sacrificial layer including one or more conductive film on a semiconductor substrate; forming a cavity used as a template of electroplating in the sacrificial layer; growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical, pedestal, columnar or convex electrode can be formed; and removing the sacrificial layer so that the electrode can be exposed.
Claim 3
Dependent Claim
55 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising: forming a capacitor including the electrode, a metal oxide dielectric film, and an upper electrode; forming the capacitor including sequentially depositing the metal oxide dielectric film and the upper electrode on the surface of the electrode after the electrode is exposed.
Claim 4
Dependent Claim
44 words
The method of manufacturing a semiconductor device according to claim 1 , wherein a insulating layer is formed as the uppermost layer of the sacrificial layer for electroplating inhibition layer, and the metal film is selectively formed on the inner surface of the cavity.
Claim 5
Dependent Claim
41 words
The method of manufacturing a semiconductor device according to claim 3 , wherein a photo-resist film is formed as the electroplating inhibition layer, and the cavity is formed by etching of the sacrificial layer using the photo-resist film as a mask.
Claim 6
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 3 , wherein the electroplating inhibition layer is formed by oxidizing an upper surface of the conductive film.
Claim 7
Dependent Claim
32 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising: forming a plurality of conductive films as the sacrificial layer so that a conductivity becomes lower in succession.
Claim 8
Dependent Claim
41 words
The method of manufacturing a semiconductor device according to claim 6 , wherein an insulating electroplating inhibition layer is formed as the uppermost layer of the sacrificial layer, and the metal film is selectively formed on the surface of the cavity.
Claim 9
Dependent Claim
71 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising: forming the sacrificial layer including sequentially forming a first conductive film, an insulating film and a second conductive film, the metal film growth including: growing the metal film in the cavity using only first conductive film as a seed layer; and growing the metal film by electroplating using the first and second conductive films as seed layers.
Claim 10
Dependent Claim
41 words
The method of a manufacturing semiconductor device according to claim 8 ., wherein an insulating electroplating inhibition layer is formed as the uppermost layer of the sacrificial layer, and the metal film is selectively formed on the surface of the cavity.
Claim 11
Dependent Claim
91 words
The method of manufacturing a semiconductor device according to claim 1 , wherein a insulating support layer is formed as the lowermost layer of the sacrificial layer; forming a conductive sputtered film by sputtering on the surface of the cavity and the sacrificial layer before the metal film is grown by electroplating; forming the electrode by growing the metal film by the electroplating using the conductive sputtered layer and the conductive film as a seed layer; and removing the conductive film while remaining(?) the support layer when removing the sacrificial layer.
Claim 12
Dependent Claim
22 words
The method of manufacturing a semiconductor device according to claim 1 , wherein a carbon film is formed as the conductive film.
Claim 13
Dependent Claim
36 words
The method of manufacturing a semiconductor device according to claim 1 , further comprising: growing a film including any one or more elements of Pt, Pd, Ru, Rh, Re, Os and Ir as the metal film.
Claim 14
Independent Claim
107 words
A method of manufacturing a semiconductor device comprising: forming a sacrificial layer including a conductive film and an insulating electroplating inhibition layer on a top surface of the sacrificial layer; forming a cavity used as a template of electroplating in the sacrificial layer; forming a columnar contact electrode in the cavity by the electroplating using the conductive layer as a seed layer; removing the sacrificial layer so that an upper surface of the contact electrode can be exposed; forming an interlayer insulating film covering the contact electrode after the upper surface of the contact electrode is exposed; and etching back an surface of the interlayer insulating film.
Claim 15
Independent Claim
107 words
A method of manufacturing a semiconductor device comprising: forming a sacrificial layer including a conductive film and an insulating electroplating inhibition layer on a top surface of the sacrificial layer; forming a cavity used as a template of electroplating in the sacrificial layer; forming a columnar contact electrode in the cavity by the electroplating using the conductive layer as a seed layer; removing the sacrificial layer so that an upper surface of the contact electrode can be exposed; forming an interlayer insulating film covering the contact electrode after the upper surface of the contact electrode is exposed; and etching back an surface of the interlayer insulating film.
Claim 16
Dependent Claim
99 words
The method of manufacturing a semiconductor device according to claim 13 further comprising: forming a sacrificial layer including one or more conductive film on the interlayer insulating layer and the contact electrode; forming a cavity used as a template of electroplating in the sacrificial layer so that the contact electrode can be exposed; growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical, pedestal, columnar or convex electrode can be formed; and removing the sacrificial layer so that a lower electrode can be exposed.
Claim 17
Dependent Claim
56 words
The method of manufacturing a semiconductor device according to claim 14 , further comprising: forming a capacitor including the electrode, a metal oxide dielectric film, and an upper electrode; forming the capacitor including sequentially depositing the metal oxide dielectric film and the upper electrode on the surface of the electrode after the electrode surface is exposed.
Claim 18
Dependent Claim
36 words
The method of manufacturing a semiconductor device according to claim 13 , further comprising: growing a film including any one or more elements of Pt, Pd, Ru, Rh, Re, Os and Ir as the metal film.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-07-28 | 2007-01-27 | 2007-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-28 | 2011-01-27 | 2011-07-29 | $3760.00 | Window Closed / Lapsed |
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