US6596602B2
Expired / Lapsed
US
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Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD
Assignee: Renesas Electronics Corp
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Filing: 2002-01-24
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Granted: 2003-07-22
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Expires: 2022-01-24
Abstract
Abstract The method for fabricating a semiconductor device in accordance with the present invention has the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over the lower electrode by the ALCVD process; and forming an upper electrode of the capacitor on the capacity insulator film.
Inventors
- 👤 Toshihiro Iizuka
- 👤 Tomoe Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10D1/711; H10D1/716; H10P14/66; H10P14/662; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69391; H10P14/69392; H10P14/69395; H10P14/69398
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A method for fabricating a semiconductor device, comprising the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over said lower electrode by means of atomic layer chemical vapor deposition (ALCVD); and forming an upper electrode of said capacitor on said capacity insulator film.
Claim 2
Independent Claim
59 words
A method for fabricating a semiconductor device, comprising the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over said lower electrode by means of atomic layer chemical vapor deposition (ALCVD); and forming an upper electrode of said capacitor on said capacity insulator film.
Claim 3
Dependent Claim
56 words
A method for fabricating a semiconductor device as claimed in claim 1 , wherein said capacity insulator film is comprised of a first dielectric film and a second dielectric film, where said first dielectric film is coated on said lower electrode or on said second dielectric film by means of atomic layer chemical vapor deposition (ALCVD).
Claim 4
Dependent Claim
34 words
A method for fabricating a semiconductor device as claimed in claim 2 , wherein said first dielectric film consists of an alumina film and said second dielectric film consists of a metal oxide film.
Claim 5
Dependent Claim
55 words
A method for fabricating a semiconductor device as claimed in claim 3 , wherein said metal oxide film is one selected from a group consisting of a Ta 2 O 5 film, a ZrO 2 film, a HfO 2 film, a SrTiO 3 film, a (Ba, Sr)TiO 3 film, and a Pb(Zr, Ti)O 3 film.
Claim 6
Dependent Claim
53 words
A method for fabricating a semiconductor device as claimed in claim 2 , wherein said first dielectric film is coated on said lower electrode or on said second dielectric film by the process of an atomic layer chemical vapor deposition (ALCVD) in which reaction gases include trimethyl aluminum (TMA) and an oxidation gas.
Claim 7
Dependent Claim
55 words
A method for fabricating a semiconductor device as claimed in claim 1 , wherein said capacity insulator film is one selected from a group consisting of a Ta 2 O 5 film, a ZrO 2 film, a HfO 2 film, a SrTiO 3 film, a (Ba, Sr)TiO 3 film, and a Pb(Zr, Ti)O 3 film.
Claim 8
Dependent Claim
26 words
A method for fabricating a semiconductor device as claimed in claim 1 , wherein said metal film consists of a metal oxide or a metal nitride.
Claim 9
Dependent Claim
38 words
A method for fabricating a semiconductor device as claimed in claim 7 , wherein said metal oxide is RuO 2 or IrO 2 and said metal nitride is one selected from a group of TiN, TaN, and WN.
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