Patent US6589886B2 successfully refreshed from Google Patents.
US6589886B2
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Method for manufacturing aluminum oxide film for use in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 2000-12-19
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Granted: 2003-07-08
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Expires: 2020-12-19
Abstract
Abstract A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.
Inventors
- 👤 Min-Soo Kim
- 👤 Kyong-Min Kim
- 👤 Chan Lim
- 👤 Heung-Sik Kwak
- 👤 Chung-Tae Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:09
CPC Classifications
C; C23; C23C; C23C8/00; C23C8/06; C23C8/08; C23C8/10; C23C8/02; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/403; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P95/00; H10P95/90; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
130 words
A method for manufacturing an aluminum oxide film for use in a semiconductor device, comprising the steps of: (a) preparing a semiconductor substrate; (b) setting the semiconductor substrate in a reaction chamber; (c) supplying modified trimethyl aluminum (MTMA) as an aluminum source into the reaction chamber so that it can be absorbed on the semiconductor substrate; (d) discharging unreacted MTMA or by-product through a first discharge pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; (e) supplying an oxygen source into the reaction chamber for being absorbed on the semiconductor substrate; (f) discharging unreacted oxygen source or by-product through a second discharge pump by permitting nitrogen gas to flow into the reaction chamber; and (g) purging the chamber for vacuum status.
Claim 2
Independent Claim
130 words
A method for manufacturing an aluminum oxide film for use in a semiconductor device, comprising the steps of: (a) preparing a semiconductor substrate; (b) setting the semiconductor substrate in a reaction chamber; (c) supplying modified trimethyl aluminum (MTMA) as an aluminum source into the reaction chamber so that it can be absorbed on the semiconductor substrate; (d) discharging unreacted MTMA or by-product through a first discharge pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; (e) supplying an oxygen source into the reaction chamber for being absorbed on the semiconductor substrate; (f) discharging unreacted oxygen source or by-product through a second discharge pump by permitting nitrogen gas to flow into the reaction chamber; and (g) purging the chamber for vacuum status.
Claim 3
Dependent Claim
36 words
The method of claim 1 , wherein the steps (c) to (f) are repeated by using an atomic layer deposition (ALD) method until the aluminum oxide is formed on the semiconductor substrate to a predetermined thickness.
Claim 4
Dependent Claim
23 words
The method of claim 1 , wherein a temperature of the semiconductor substrate is in the range of 200° C. to 450° C.
Claim 5
Dependent Claim
18 words
The method of claim 1 , wherein the step (c), is carried out for 0.1 to 3 seconds.
Claim 6
Dependent Claim
27 words
The method of claim 1 , wherein the temperature of a vessel for storing the MTMA is kept in the range of 50° C. to 100° C.
Claim 7
Dependent Claim
32 words
The method of claim 5 , wherein the temperature of a supply-line from the MTMA source vessel to the reaction chamber is kept in the range of 70° C. to 180° C.
Claim 8
Dependent Claim
30 words
The method of claim 1 , wherein the oxygen source is selected from the group consisting of H 2 O, O 2 , N 2 O, and O 3 .
Claim 9
Dependent Claim
18 words
The method of claim 7 , wherein the step (e), is carried out for 0.1 to 3 seconds.
Claim 10
Dependent Claim
35 words
The method of claim 1 , wherein the aluminum oxide is deposited on condition that the temperature of the reaction chamber ranges from 200° C. to 450° C. and the pressure is approximately 300 mTorr.
Claim 11
Independent Claim
150 words
A method for manufacturing a semiconductor device, comprising the steps of: (a) preparing an active matrix provided with a substrate, isolation regions, gate line, gate oxide and a first insulating layer; (b) forming a buffer layer and a first conductive layer on the active matrix; (c) forming a dielectric layer of aluminum oxide (Al 2 O 3 ) on the first conductive layer by using an ALD method, MTMA being used as aluminum source material; (d) forming a second conductive layer on the dielectric layer and patterning the second conductive layer, the dielectric layer, the first conductive layer and the buffer layer, thereby obtaining a capacitor structure; (e) forming a hydrogen barrier layer on the capacitor structure; (f) forming a bit line and a local interconnection after depositing a second insulating layer; and (g) forming a passivation layer on the bit line, the local interconnection and the second insulating layer.
Claim 12
Independent Claim
150 words
A method for manufacturing a semiconductor device, comprising the steps of: (a) preparing an active matrix provided with a substrate, isolation regions, gate line, gate oxide and a first insulating layer; (b) forming a buffer layer and a first conductive layer on the active matrix; (c) forming a dielectric layer of aluminum oxide (Al 2 O 3 ) on the first conductive layer by using an ALD method, MTMA being used as aluminum source material; (d) forming a second conductive layer on the dielectric layer and patterning the second conductive layer, the dielectric layer, the first conductive layer and the buffer layer, thereby obtaining a capacitor structure; (e) forming a hydrogen barrier layer on the capacitor structure; (f) forming a bit line and a local interconnection after depositing a second insulating layer; and (g) forming a passivation layer on the bit line, the local interconnection and the second insulating layer.
Claim 13
Dependent Claim
28 words
The method of claim 10 , wherein the gate oxide is made of aluminum oxide processed by an ALD method and MTMA is used as aluminum source material.
Claim 14
Dependent Claim
29 words
The method of claim 10 , wherein the hydrogen barrier layer is made of aluminum oxide processed by an ALD method and MTMA is used as aluminum source material.
Claim 15
Dependent Claim
22 words
The method of claim 10 , wherein after the step (c), there is a step of annealing the dielectric layer for densification.
Claim 16
Dependent Claim
27 words
The method of claim 13 , wherein the step of annealing the dielectric layer is carried out at a temperature ranging from 750° C. to 850° C.
Claim 17
Dependent Claim
27 words
The method of claim 11 , wherein an N 2 purging time for forming the aluminum oxide as the gate oxide is approximately 5 to 10 seconds.
Claim 18
Dependent Claim
27 words
The method of claim 13 , wherein the aluminum oxide as the hydrogen barrier layer is formed to a thickness ranging from 60 Å to 200 Å.
References Cited (Backward Citations)
US6144060A
Cited
US6305314B1
Cited
US6255122B1
Cited
US20010024387A1
Cited
US20020000598A1
Cited
US20020020868A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-07 | 2007-01-06 | 2007-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-07 | 2011-01-06 | 2011-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-07 | 2015-01-06 | 2015-07-08 | $7700.00 | Window Closed / Lapsed |