US6589878B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of cleaning a wafer in an IC fabrication
Assignee: Individual
•
Filing: 2002-07-24
•
Granted: 2003-07-08
•
Expires: 2022-07-24
Abstract
Abstract A semiconductor deposition system in accordance with the present invention includes a CMP apparatus operative to planarize an active surface of a semiconductor wafer, and a wafer cleaner for cleaning wafer after the CMP process. The wafer cleaner preferably.includes a wafer rotating mechanism, a steam inlet for applying steam to the active surface of the wafer as it is rotated and a liquid inlet for simultaneously applying a liquid to the back side surface of the wafer. A method for manufacturing an integrated circuit in accordance with the present invention includes subjecting an active surface of the wafer to a plurality of processes selected from a group including deposition, patterning, doping, planarization, ashing and etching, and steam cleaning the active surface at least once before, during, and after the plurality of processes. Preferably, an aqueous vapor phase is applied to the first surface of the wafer as an aqueous liquid phase is applied to the other surface of the wafer. Spinning the wafer urges condensate from the vapor phase to move toward the edge of the wafer as the wafer surfaces are cleaned.
Inventors
- 👤 D'Arcy Harold Lorimer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:24
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0454; H10P72/0402; H10P72/0406; H10P72/0411; H10P72/0414; H10P72/0468; H10P72/0472; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
105 words
A method for manufacturing an integrated circuit comprising: selecting a wafer having an active surface and a backside surface; subjecting said active surface of said wafer to at least one of a plurality of processes selected from a group including thermal oxidation, deposition, patterning, doping, planarization, and etching processes; cleaning said wafer before said at least one of a plurality of processes, further comprising: rotating said wafer; applying a vapor phase to said active surface at a first temperature; and while applying said vapor phase to said active surface, applying a liquid to said backside surface at a second temperature lower than said first temperature.
Claim 2
Independent Claim
105 words
A method for manufacturing an integrated circuit comprising: selecting a wafer having an active surface and a backside surface; subjecting said active surface of said wafer to at least one of a plurality of processes selected from a group including thermal oxidation, deposition, patterning, doping, planarization, and etching processes; cleaning said wafer before said at least one of a plurality of processes, further comprising: rotating said wafer; applying a vapor phase to said active surface at a first temperature; and while applying said vapor phase to said active surface, applying a liquid to said backside surface at a second temperature lower than said first temperature.
Claim 3
Dependent Claim
18 words
A method for manufacturing an integrated circuit as recited in claim 1 wherein said vapor phase comprises steam.
Claim 4
Dependent Claim
19 words
A method for manufacturing an integrated circuit as recited in claim 2 wherein said vapor phase comprises isopropyl alcohol.
Claim 5
Dependent Claim
33 words
A method for manufacturing an integrated circuit as recited in claim 2 wherein said vapor phase comprises at least one of ammonia gas, hydrogen chloride gas, hydrogen bromide gas, and hydrogen fluoride gas.
Claim 6
Dependent Claim
25 words
A method for manufacturing an integrated circuit as recited in claim 1 wherein said vapor phase is filtered prior to applying to said active surface.
Claim 7
Dependent Claim
37 words
A method for manufacturing an integrated circuit as recited in claim 1 further comprising: cutting said wafer into a plurality of integrated circuit die; and packaging said integrated circuit die to form a plurality of integrated circuits.
Claim 8
Independent Claim
105 words
A method for manufacturing an integrated circuit comprising: selecting a wafer having an active surface and a backside surface; subjecting said active surface of said wafer to at least one of a plurality of processes selected from a group including thermal oxidation, deposition, patterning, doping, planarization, and etching processes; cleaning said wafer during said at least one of a plurality of processes, further comprising: rotating said wafer; applying a vapor phase to said active surface at a first temperature; and while applying said vapor phase to said active surface, applying a liquid to said backside surface at a second temperature lower than said first temperature.
Claim 9
Independent Claim
105 words
A method for manufacturing an integrated circuit comprising: selecting a wafer having an active surface and a backside surface; subjecting said active surface of said wafer to at least one of a plurality of processes selected from a group including thermal oxidation, deposition, patterning, doping, planarization, and etching processes; cleaning said wafer during said at least one of a plurality of processes, further comprising: rotating said wafer; applying a vapor phase to said active surface at a first temperature; and while applying said vapor phase to said active surface, applying a liquid to said backside surface at a second temperature lower than said first temperature.
Claim 10
Dependent Claim
18 words
A method for manufacturing an integrated circuit as recited in claim 7 wherein said vapor phase comprises steam.
Claim 11
Dependent Claim
19 words
A method for manufacturing an integrated circuit as recited in claim 8 wherein said vapor phase comprises isopropyl alcohol.
Claim 12
Dependent Claim
33 words
A method for manufacturing an integrated circuit as recited in claim 8 wherein said vapor phase comprises at least one of ammonia gas, hydrogen chloride gas, hydrogen bromide gas, and hydrogen fluoride gas.
Claim 13
Dependent Claim
25 words
A method for manufacturing an integrated circuit as recited in claim 7 wherein said vapor phase is filtered prior to applying to said active surface.
Claim 14
Dependent Claim
37 words
A method for manufacturing an integrated circuit as recited in claim 7 further comprising: cutting said wafer into a plurality of integrated circuit die; and packaging said integrated circuit die to form a plurality of integrated circuits.
Claim 15
Independent Claim
105 words
A method for manufacturing an integrated circuit comprising: selecting a wafer having an active surface and a backside surface; subjecting said active surface of said wafer to at least one of a plurality of processes selected from a group including thermal oxidation, deposition, patterning, doping, planarization, and etching processes; cleaning said wafer after said at least one of a plurality of processes, further comprising: rotating said wafer; applying a vapor phase to said active surface at a first temperature; and while applying said vapor phase to said active surface, applying a liquid to said backside surface at a second temperature lower than said first temperature.
Claim 16
Independent Claim
105 words
A method for manufacturing an integrated circuit comprising: selecting a wafer having an active surface and a backside surface; subjecting said active surface of said wafer to at least one of a plurality of processes selected from a group including thermal oxidation, deposition, patterning, doping, planarization, and etching processes; cleaning said wafer after said at least one of a plurality of processes, further comprising: rotating said wafer; applying a vapor phase to said active surface at a first temperature; and while applying said vapor phase to said active surface, applying a liquid to said backside surface at a second temperature lower than said first temperature.
Claim 17
Dependent Claim
18 words
A method for manufacturing an integrated circuit as recited in claim 13 wherein said vapor phase comprises steam.
Claim 18
Dependent Claim
19 words
A method for manufacturing an integrated circuit as recited in claim 14 wherein said vapor phase comprises isopropyl alcohol.
Claim 19
Dependent Claim
33 words
A method for manufacturing an integrated circuit as recited in claim 14 wherein said vapor phase comprises at least one of ammonia gas, hydrogen chloride gas, hydrogen bromide gas, and hydrogen fluoride gas.
Claim 20
Dependent Claim
25 words
A method for manufacturing an integrated circuit as recited in claim 13 wherein said vapor phase is filtered prior to applying to said active surface.
Claim 21
Dependent Claim
37 words
A method for manufacturing an integrated circuit as recited in claim 13 further comprising: cutting said wafer into a plurality of integrated circuit die; and packaging said integrated circuit die to form a plurality of integrated circuits.
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