Patent US6589714B2 successfully refreshed from Google Patents.
US6589714B2
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Method for making programmable resistance memory element using silylated photoresist
Assignee: BAE Systems Information and Electronic Systems Integration Inc
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Filing: 2001-06-26
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Granted: 2003-07-08
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Expires: 2021-06-26
Abstract
Abstract A method of making a electrically operated programmable resistance memory element. A silylated photoresist sidewall spacer is used as a mask for form raised portions on an edge of a conductive layer. The modified conductive layer is used as an electrode for the memory element.
Inventors
- 👤 Jon Maimon
- 👤 Andrew Pomerene
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:37
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004; H; H10; H10N; H10N70/00; H10N70/20
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
62 words
A method for making a programmable resistance element, comprising: providing a conductive material; forming a silylated photoresist sidewall spacer over a portion of said conductive material; removing a portion of said conductive material to form a raised portion extending from said conductive material under said spacer; and forming a programmable resistance material adjacent to at least a portion of said raised portion.
Claim 2
Independent Claim
62 words
A method for making a programmable resistance element, comprising: providing a conductive material; forming a silylated photoresist sidewall spacer over a portion of said conductive material; removing a portion of said conductive material to form a raised portion extending from said conductive material under said spacer; and forming a programmable resistance material adjacent to at least a portion of said raised portion.
Claim 3
Dependent Claim
15 words
The method of claim 1 , wherein said removing step comprises etching said conductive material.
Claim 4
Dependent Claim
15 words
The method of claim 2 , wherein said etching step comprises anisotropically etching said material.
Claim 5
Dependent Claim
15 words
The method of claim 2 , wherein said etching step comprises isotropically etching said material.
Claim 6
Dependent Claim
52 words
The method of claim 1 , wherein said forming said silylated spacer comprises: forming a photoresist mask over said conductive material; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; removing said top silylated portion; and removing said photoresist mask whereby said silylated sidewall portion remains.
Claim 7
Dependent Claim
30 words
The method of claim 5 , wherein said forming said photoresist mask step comprises: forming a photoresist layer over said conductive material; and removing a portion of said photoresist layer.
Claim 8
Dependent Claim
37 words
The method of claim 1 , wherein said forming said programmable resistance material step comprises the step of forming said programmable resistance material adjacent to at least a portion of a tip portion of said raised portion.
Claim 9
Dependent Claim
16 words
The method of claim 1 , wherein said programmable resistance material comprises a phase change material.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein said programmable resistance material comprises a chalcogen element.
Claim 11
Independent Claim
64 words
A method for making a programmable resistance element, comprising: providing a conductive layer; forming a silylated photoresist sidewall spacer over a portion of an edge of said conductive layer; removing a portion of said conductive layer to form a raised portion extending from said edge under said spacer; and forming a programmable resistance material adjacent to at least a portion of said raised portion.
Claim 12
Independent Claim
64 words
A method for making a programmable resistance element, comprising: providing a conductive layer; forming a silylated photoresist sidewall spacer over a portion of an edge of said conductive layer; removing a portion of said conductive layer to form a raised portion extending from said edge under said spacer; and forming a programmable resistance material adjacent to at least a portion of said raised portion.
Claim 13
Dependent Claim
15 words
The method of claim 10 , wherein said removing step comprises etching said conductive layer.
Claim 14
Dependent Claim
16 words
The method of claim 11 , wherein said etching step comprises anisotropically etching said conductive layer.
Claim 15
Dependent Claim
16 words
The method of claim 11 , wherein said etching step comprises isotropically etching said conductive layer.
Claim 16
Dependent Claim
51 words
The method of claim 10 , wherein said forming said silylated spacer comprises: forming a photoresist mask over said edge; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; removing said top silylated portion; and removing said photoresist mask whereby said silylated sidewall portion remains.
Claim 17
Dependent Claim
29 words
The method of claim 14 , wherein said forming said photoresist mask step comprises: applying a photoresist layer over said edge; and removing a portion of said photoresist layer.
Claim 18
Dependent Claim
35 words
The method of claim 10 , wherein said providing said conductive layer step comprises: providing a dielectric layer; forming a sidewall surface in said dielectric layer; and forming said conductive layer on said sidewall surface.
Claim 19
Dependent Claim
20 words
The method of claim 10 , wherein said conductive material is a conductive sidewall spacer or a conductive sidewall liner.
Claim 20
Dependent Claim
35 words
The method of claim 10 , wherein said forming said programmable resistance material step comprises the step of forming said programmable resistance material adjacent at least a portion of a tip of said raised portion.
Claim 21
Dependent Claim
16 words
The method of claim 10 , wherein said programmable resistance material comprises a phase change material.
Claim 22
Dependent Claim
15 words
The method of claim 10 , wherein said programmable resistance material comprises a chalcogen element.
Claim 23
Independent Claim
95 words
A method of forming a programmable resistance memory element, comprising: providing a first dielectric layer; forming a sidewall surface in said first dielectric layer; forming a conductive layer on said sidewall surface; forming a second dielectric layer over said conductive layer; forming or exposing an edge of said conductive layer; forming a silylated photoresist sidewall spacer over a portion of said edge of said conductive layer; forming a raised portion extending from said edge of said conductive layer; and forming a programmable resistance memory material adjacent to at least a portion of said raised portion.
Claim 24
Independent Claim
95 words
A method of forming a programmable resistance memory element, comprising: providing a first dielectric layer; forming a sidewall surface in said first dielectric layer; forming a conductive layer on said sidewall surface; forming a second dielectric layer over said conductive layer; forming or exposing an edge of said conductive layer; forming a silylated photoresist sidewall spacer over a portion of said edge of said conductive layer; forming a raised portion extending from said edge of said conductive layer; and forming a programmable resistance memory material adjacent to at least a portion of said raised portion.
Claim 25
Dependent Claim
46 words
The method of claim 21 , wherein said forming said raised portion step comprises: forming a silylated photoresist sidewall spacer over a portion of said edge of said conductive layer; and removing a portion of said conductive layer to form said raised portion under said spacer.
Claim 26
Dependent Claim
15 words
The method of claim 22 , wherein said removing step comprises etching said conductive layer.
Claim 27
Dependent Claim
16 words
The method of claim 23 , wherein said etching step comprises anisotropically etching said conductive layer.
Claim 28
Dependent Claim
16 words
The method of claim 23 , wherein said etching step comprises isotropically etching said conductive layer.
Claim 29
Dependent Claim
51 words
The method of claim 22 , wherein said forming said silylated spacer comprises: forming a photoresist mask over said edge; silylating said photoresist mask to form a top silylated portion and a sidewall silylated portion; removing said top silylated portion; and removing said photoresist mask whereby said silylated sidewall portion remains.
Claim 30
Dependent Claim
29 words
The method of claim 26 , wherein said forming said photoresist mask step comprises: applying a photoresist layer over said edge; and removing a portion of said photoresist layer.
Claim 31
Dependent Claim
63 words
The method of claim 21 , wherein said forming said programmable resistance material step comprises the steps of: forming a third dielectric layer on said edge and over said raised portion; removing a portion of said third dielectric layer to expose a top surface of said raised portion; and forming said programmable resistance material over at least a portion of said top surface.
Claim 32
Dependent Claim
28 words
The method of claim 21 , wherein said forming said sidewall surface step comprises forming an opening in said first dielectric layer, said opening having said sidewall surface.
Claim 33
Dependent Claim
32 words
The method of claim 29 , wherein forming said conductive layer on said sidewall surface step comprises forming said conductive layer on said sidewall surface and a bottom surface of said opening.
Claim 34
Dependent Claim
31 words
The method of claim 21 , further comprising: after said forming said conductive layer step and before said forming said second dielectric layer step, removing a portion of said conductive layer.
Claim 35
Dependent Claim
19 words
The method of claim 21 , wherein said removing said conductive layer step comprises anisotropically etching said conductive layer.
Claim 36
Dependent Claim
16 words
The method of claim 21 , wherein said programmable resistance material comprises a phase change material.
Claim 37
Dependent Claim
14 words
The method of claim 21 , wherein said programmable resistance material comprises a chalcogenide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-07 | 2007-01-06 | 2007-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-07 | 2011-01-06 | 2011-07-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-07 | 2015-01-06 | 2015-07-08 | $7700.00 | Window Closed / Lapsed |