Patent US6586095B2 successfully refreshed from Google Patents.
US6586095B2
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Semiconducting oxide nanostructures
Assignee: Georgia Tech Research Corp
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Filing: 2002-01-08
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Granted: 2003-07-01
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Expires: 2022-01-08
Abstract
Abstract Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.
Inventors
- 👤 Zhong L. Wang
- 👤 Zhengwei Pan
- 👤 Zurong Dai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:24
CPC Classifications
C; C01; C01B; C01B13/00; C01B13/14; C01B13/145; B; B82; B82Y; B82Y30/00; C01G; C01G11/00; C01G15/00; C01G19/00; C01G19/02; C01G21/00; C01G21/02; C30; C30B; C30B7/00; C01P; C01P2002/00; C01P2002/70; C01P2002/76; C01P2002/77; C01P2004/00; C01P2004/10; C01P2004/20; C01P2004/22; C01P2004/54; C01P2004/60; C01P2004/62; C01P2004/64; Y; Y10; Y10S; Y10S438/00; Y10S438/933; Y10T; Y10T428/00; Y10T428/26; Y10T428/29; Y10T428/2913; Y10T428/2973; Y10T428/298
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
50 words
A nanostructure, comprising: a free standing semiconductor oxide nanostructure having a substantially rectangular cross-section, wherein the nanostructure is within the range of: about 20 nanometers to about 6000 nanometers in width, about 5 nanometers to about 100 nanometers in height, and about 100 nanometers to about 3 millimeters in length.
Claim 2
Dependent Claim
50 words
A nanostructure, comprising: a free standing semiconductor oxide nanostructure having a substantially rectangular cross-section, wherein the nanostructure is within the range of: about 20 nanometers to about 6000 nanometers in width, about 5 nanometers to about 100 nanometers in height, and about 100 nanometers to about 3 millimeters in length.
Claim 3
Dependent Claim
25 words
The nanostructure of claim 1 , wherein the semiconductor oxide is chosen from oxides of zinc, cadmium, mercury, gallium, indium, tellurium, germanium, tin, and lead.
Claim 4
Dependent Claim
61 words
The nano structure of claim 2 , wherein the at least one semiconductor oxide is a doped semiconductor oxide, wherein the doped semiconductor oxide includes the at least one semiconductor oxide and at least one dopant, wherein the at least one dopant is chosen from aluminum, gallium, boron, yttrium, indium, scandium, silicon, germanium, titanium, zirconium, hafnium, antimony, tin, nitrogen, and fluorine.
Claim 5
Dependent Claim
18 words
The nano structure of claim 1 , wherein the nanostructure is single crystalline, defect-free, dislocation-free, and structurally uniform.
Claim 6
Dependent Claim
19 words
The nanostructure of claim 1 , wherein the nanostructure has a width-to-height ratio of about 5 to about 35.
Claim 7
Dependent Claim
38 words
The nanostructure of claim 1 , wherein the nanostructure is about 20 nanometers to about 3000 nanometers in width, about 5 nanometers to about 50 nanometers in height, and about 100 nanometers to about 3 millimeters in length.
Claim 8
Dependent Claim
20 words
The nanostructure of claim 1 , wherein the nanostructure has a substantially uniform width along the length of the substrate.
Claim 9
Dependent Claim
14 words
The nanostructure of claim 1 , wherein the semiconductor oxide is a binary compound.
Claim 10
Dependent Claim
14 words
The nanostructure of claim 1 , wherein the semiconductor oxide is a ternary compound.
Claim 11
Dependent Claim
81 words
A nanostructure comprising: a free standing semiconductor oxide nanostructure having a top, a bottom, a right side, and a left side, wherein the top and the bottom have the same width and wherein the right side and the left side have the same height, and wherein the nanostructure is within the range of: about 20 nanometers to about 6000 nanometers in width, about 5 nanometers to about 100 nanometers in height, and about 100 nanometers to about 3 millimeters in length.
Claim 12
Dependent Claim
81 words
A nanostructure comprising: a free standing semiconductor oxide nanostructure having a top, a bottom, a right side, and a left side, wherein the top and the bottom have the same width and wherein the right side and the left side have the same height, and wherein the nanostructure is within the range of: about 20 nanometers to about 6000 nanometers in width, about 5 nanometers to about 100 nanometers in height, and about 100 nanometers to about 3 millimeters in length.
Claim 13
Dependent Claim
28 words
The nano structure of claim 10 , wherein the at least one semiconductor is chosen from oxides of zinc, cadmium, mercury, gallium, indium, tellurium, germanium, tin, and lead.
Claim 14
Dependent Claim
37 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of lead the top and the bottom have ±(201) surfaces and the left and the right sides have ±(10{overscore (1)}) surfaces.
Claim 15
Dependent Claim
35 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of gallium the top and the bottom have ±(100) surfaces and the left and right sides have ±(010) surface.
Claim 16
Dependent Claim
34 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of gallium the top and bottom surfaces have ±(201) and left and right sides have ±(10{overscore (1)}) surface.
Claim 17
Dependent Claim
39 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of zinc the top and the bottom have ±(2{overscore (1)} {overscore (1)}0) surfaces and the left and right sides have ±(01 {overscore (1)}0).
Claim 18
Dependent Claim
35 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of zinc the bottom surfaces surfaces have ±(2{overscore (1)} {overscore (1)}0) and the left and right sides have ±(0001).
Claim 19
Dependent Claim
37 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of tin the top and the bottom have ±(10{overscore (1)}) surfaces and the left and the right sides have ±(010) surfaces.
Claim 20
Dependent Claim
37 words
The nano structure of claim 11 , wherein if the at least one semiconductor is the oxide of indium the top and the bottom have ±(100) surfaces and the left and the right sides have ±(010) surfaces.
Claim 21
Dependent Claim
36 words
The nanostructure of claim 11 , wherein if the at least one semiconductor is the oxide of cadmium the top and the bottom have ±(001) surfaces and the left and the right sides have ±(010) surfaces.
Claim 22
Dependent Claim
19 words
The nanostructure of claim 10 , wherein the nanostructure has a width-to-height ratio of about 5 to about 10.
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