US6571383B1 — Semiconductor device fabrication using a photomas…

Claim 1

Independent Claim 100 words

A method of manufacturing a photomask, the method comprising: designing a set of desired patterns; deriving a set of first pass corrected patterns by correcting the desired patterns to compensate for major processing effects; building a test mask with patterns based on the set of first pass corrected patterns; building test structures based on the test mask; deriving a set of second pass corrected patterns by correcting the first pass corrected patterns using information based upon the test structures built based on the test mask; and manufacturing a photomask based at least in part on the second pass corrected patterns.

Claim 2

Independent Claim 100 words

A method of manufacturing a photomask, the method comprising: designing a set of desired patterns; deriving a set of first pass corrected patterns by correcting the desired patterns to compensate for major processing effects; building a test mask with patterns based on the set of first pass corrected patterns; building test structures based on the test mask; deriving a set of second pass corrected patterns by correcting the first pass corrected patterns using information based upon the test structures built based on the test mask; and manufacturing a photomask based at least in part on the second pass corrected patterns.

Claim 3

Dependent Claim 13 words

The method of claim 1 wherein the major effects comprise aerial image effects.

Claim 4

Dependent Claim 13 words

The method of claim 2 wherein the major effects further comprise resist effects.

Claim 5

Dependent Claim 13 words

The method of claim 2 wherein the major effects further comprise etch effects.

Claim 6

Dependent Claim 32 words

The method of claim 1 and further comprising determining remaining errors that exist in the first pass corrected patterns wherein the remaining errors are determined by empirical testing of the test structures.

Claim 7

Dependent Claim 47 words

The method of claim 5 wherein the test structures are based on a set of test patterns that are different than the desired patterns, and wherein the remaining errors are determined by empirical testing of the set of test patterns that are different than the desired patterns.

Claim 8

Dependent Claim 17 words

The method of claim 5 wherein the test structures are based on the first pass corrected patterns.

Claim 9

Dependent Claim 21 words

The method of claim 5 wherein the remaining errors are determined by empirical testing of electrical characteristics of the test structures.

Claim 10

Dependent Claim 17 words

The method of claim 1 wherein the first pass corrected patterns are derived using a theoretical model.

Claim 11

Dependent Claim 17 words

The method of claim 5 wherein the remaining errors include errors due to effects of resist behavior.

Claim 12

Dependent Claim 17 words

The method of claim 5 wherein the remaining errors include errors due to effects of etch characteristics.

Claim 13

Dependent Claim 15 words

The method of claim 1 wherein the set of first pass corrected patterns include serifs.

Claim 14

Dependent Claim 21 words

The method of claim 1 wherein the photomask includes assist features disposed between selected ones of the second pass corrected patterns.

Claim 15

Dependent Claim 18 words

The method of claim 1 wherein designing a set of desired patterns comprises designing a semiconductor integrated circuit.

Claim 16

Dependent Claim 16 words

The method of claim 14 wherein the semiconductor integrated circuit comprises a dynamic random access memory.

Claim 17

Dependent Claim 14 words

The method of claim 14 wherein the semiconductor integrated circuit comprises a logic chip.

Claim 18

Independent Claim 106 words

A method of generating patterns for a photomask, the method comprising: designing an ideal pattern; providing an aerial image model; generating a first pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the ideal pattern, the optical proximity correction being based on the aerial image model; building a test mask; building test structures based on the test mask; deriving an empirical model by empirically modeling the test structures; and generating a second pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the first pass corrected pattern, the optical proximity correction being based on the empirical model.

Claim 19

Independent Claim 106 words

A method of generating patterns for a photomask, the method comprising: designing an ideal pattern; providing an aerial image model; generating a first pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the ideal pattern, the optical proximity correction being based on the aerial image model; building a test mask; building test structures based on the test mask; deriving an empirical model by empirically modeling the test structures; and generating a second pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the first pass corrected pattern, the optical proximity correction being based on the empirical model.

Claim 20

Dependent Claim 20 words

The method of claim 17 wherein the test mask includes a test pattern different than the first pass corrected pattern.

Claim 21

Dependent Claim 36 words

The method of claim 18 wherein the test pattern used in deriving the empirical model comprises a first pass corrected test pattern using the same optical proximity correction as when generating a first pass corrected pattern.

Claim 22

Dependent Claim 20 words

The method of claim 17 wherein the test mask includes at least a portion of the first pass corrected pattern.

Claim 23

Dependent Claim 19 words

The method of claim 17 wherein the empirical model is derived after the first pass corrected pattern is generated.

Claim 24

Dependent Claim 43 words

The method of claim 17 generating a first pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the ideal pattern comprises using an optical proximity correction that is based on the aerial image model and a resist model.

Claim 25

Dependent Claim 17 words

The method of claim 17 wherein providing an aerial image model comprises deriving an aerial image model.

Claim 26

Dependent Claim 18 words

The method of claim 23 wherein the ideal pattern is designed before the aerial image model is derived.

Claim 27

Independent Claim 18 words

The method of claims 23 wherein the ideal pattern is designed after the aerial image model is derived.

Claim 28

Independent Claim 125 words

A method of manufacturing a photomask, the method comprising: providing a set of ideal patterns to be incorporated in a design; generating a set of modeled patterns by modifying the shapes of the ideal patterns using an aerial image model; fabricating a test mask that includes the modeled patterns; fabricating a test wafer using the test mask, the fabricating including forming test structures on the surface of the wafer; measuring the test structures formed on the surface of the wafer; comparing the measured test structures with the ideal patterns; generating a set of corrected patterns by modifying the shapes of the modeled patterns based on the comparison of the measured test structures and the ideal patterns; and fabricating a photomask that includes the corrected patterns.

Claim 29

Independent Claim 125 words

A method of manufacturing a photomask, the method comprising: providing a set of ideal patterns to be incorporated in a design; generating a set of modeled patterns by modifying the shapes of the ideal patterns using an aerial image model; fabricating a test mask that includes the modeled patterns; fabricating a test wafer using the test mask, the fabricating including forming test structures on the surface of the wafer; measuring the test structures formed on the surface of the wafer; comparing the measured test structures with the ideal patterns; generating a set of corrected patterns by modifying the shapes of the modeled patterns based on the comparison of the measured test structures and the ideal patterns; and fabricating a photomask that includes the corrected patterns.

Claim 30

Dependent Claim 42 words

The method of claim 26 wherein generating a set of modeled patterns by modifying the shapes of the ideal patterns using an aerial image model comprises modifying the shapes of the ideal patterns using an aerial image model and a resist model.

Claim 31

Dependent Claim 21 words

The method of claim 26 wherein measuring the test structures comprises measuring at least one electrical characteristic of the test structures.

Claim 32

Independent Claim 110 words

A method of manufacturing a semiconductor device, the method comprising: designing an ideal pattern of a layer of the semiconductor device; deriving a first pass corrected pattern by correcting the ideal pattern for major effects; building a test mask with patterns based on the set of first pass corrected pattern; building a test wafer based on the test mask; determining remaining errors in the first pass corrected pattern from the test wafer; deriving a second pass corrected pattern by correcting the first pass corrected pattern for the remaining errors; building a photomask that is based on the second pass corrected pattern; and using the photomask to produce a semiconductor device.

Claim 33

Independent Claim 110 words

A method of manufacturing a semiconductor device, the method comprising: designing an ideal pattern of a layer of the semiconductor device; deriving a first pass corrected pattern by correcting the ideal pattern for major effects; building a test mask with patterns based on the set of first pass corrected pattern; building a test wafer based on the test mask; determining remaining errors in the first pass corrected pattern from the test wafer; deriving a second pass corrected pattern by correcting the first pass corrected pattern for the remaining errors; building a photomask that is based on the second pass corrected pattern; and using the photomask to produce a semiconductor device.

Claim 34

Dependent Claim 13 words

The method of claim 29 wherein the semiconductor device comprises a memory chip.

Claim 35

Dependent Claim 16 words

The method of claim 30 wherein the semiconductor device comprises a dynamic random access memory chip.

Claim 36

Dependent Claim 13 words

The method of claim 29 wherein the semiconductor device comprises a logic chip.

Claim 37

Dependent Claim 13 words

The method of claim 29 wherein the major effects comprise aerial image effects.

Claim 38

Dependent Claim 18 words

The method of claim 29 wherein the remaining errors are determined by empirical testing of the test wafer.

Claim 39

Dependent Claim 27 words

The method of claim 34 wherein the remaining errors are determined by empirical testing of at least one test pattern that is different than the ideal pattern.

Claim 40

Dependent Claim 33 words

The method of claim 35 wherein the first pass corrected pattern is derived using an optical proximity correction and wherein the at least one test pattern comprises a first pass corrected test pattern.

Claim 41

Dependent Claim 22 words

The method of claim 29 wherein the remaining errors are determined by empirical testing of the set of first pass corrected patterns.

Claim 42

Independent Claim 130 words

A method of manufacturing a semiconductor device, the method comprising: designing an ideal pattern of a layer of the semiconductor device; deriving a major effect model; generating a first pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the ideal pattern, the optical proximity correction being based on the major effect model; building a test mask; building test structures based on the test mask; deriving an empirical model by empirically modeling the test structures; generating a second pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the first pass corrected pattern, the optical proximity correction being based on the empirical model; building a photomask that includes the second pass corrected pattern; and using the photomask to produce the semiconductor device.

Claim 43

Independent Claim 130 words

A method of manufacturing a semiconductor device, the method comprising: designing an ideal pattern of a layer of the semiconductor device; deriving a major effect model; generating a first pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the ideal pattern, the optical proximity correction being based on the major effect model; building a test mask; building test structures based on the test mask; deriving an empirical model by empirically modeling the test structures; generating a second pass corrected pattern by modifying the ideal pattern using an optical proximity correction on the first pass corrected pattern, the optical proximity correction being based on the empirical model; building a photomask that includes the second pass corrected pattern; and using the photomask to produce the semiconductor device.

Claim 44

Dependent Claim 26 words

The method of claim 38 wherein the major effect model comprises a model based on an aerial image model, a resist model and an etch model.

Claim 45

Dependent Claim 15 words

The method of claim 38 wherein the major effect model comprises an aerial image model.

Claim 46

Dependent Claim 15 words

The method of claim 40 wherein the major effect model further comprises a resist model.

Claim 47

Dependent Claim 15 words

The method of claim 40 wherein the major effect model further comprises an etch model.

Claim 48

Dependent Claim 26 words

The method of claim 38 wherein the empirical model is used to correct errors remaining after the optical proximity correction based on the major effect model.

Claim 49

Dependent Claim 18 words

The method of claim 43 wherein the test structures comprise structures that are different than the ideal pattern.

Claim 50

Dependent Claim 22 words

The method of claim 43 wherein the test structures comprise structures that are substantially the same as the first pass corrected pattern.

Claim 51

Dependent Claim 13 words

The method of claim 38 wherein the semiconductor device comprises a memory chip.

Claim 52

Dependent Claim 16 words

The method of claim 46 wherein the semiconductor device comprises a dynamic random access memory chip.

Claim 53

Independent Claim 116 words

A method of manufacturing a semiconductor device, the method comprising: designing an ideal pattern of a layer of the semiconductor device; performing at least one correction pass to correct the ideal pattern for major effects and to generate a first pass corrected pattern; forming at least one test device based upon the first pass corrected pattern; using the at least one test device to determine remaining errors in the first pass corrected pattern; performing at least one correction pass to correct the remaining errors in the first pass corrected pattern and to generate a second pass corrected pattern; building a photomask that includes the second pass corrected pattern; and using the photomask produce a semiconductor device.

Claim 54

Independent Claim 116 words

A method of manufacturing a semiconductor device, the method comprising: designing an ideal pattern of a layer of the semiconductor device; performing at least one correction pass to correct the ideal pattern for major effects and to generate a first pass corrected pattern; forming at least one test device based upon the first pass corrected pattern; using the at least one test device to determine remaining errors in the first pass corrected pattern; performing at least one correction pass to correct the remaining errors in the first pass corrected pattern and to generate a second pass corrected pattern; building a photomask that includes the second pass corrected pattern; and using the photomask produce a semiconductor device.

Claim 55

Dependent Claim 24 words

The method of claim 46 wherein performing at least one correction pass to correct the ideal pattern comprises performing more than one correction pass.

Claim 56

Dependent Claim 26 words

The method of claim 49 wherein performing at least one correction pass to correct the first pass corrected pattern comprises performing more than one correction pass.

Claim 57

Dependent Claim 26 words

The method of claim 48 wherein performing at least one correction pass to correct the first pass corrected pattern comprises performing more than one correction pass.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-05-26	2006-11-25	2007-05-27	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-05-26	2010-11-25	2011-05-27	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-05-26	2014-11-25	2015-05-27	$7700.00	Window Closed / Lapsed

Semiconductor device fabrication using a photomask designed using modeling and empirical testing

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