US6566239B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device manufacturing method having a step of forming a post terminal on a wiring by electroless plating
Assignee: Socionext Inc
•
Filing: 2001-05-31
•
Granted: 2003-05-20
•
Expires: 2021-05-31
Abstract
Abstract A method of manufacturing a semiconductor device is provided. The method includes the steps of forming a wiring layer on an underlying metal film formed on a substrate, the wiring layer being electrically connected to an electrode pad formed on a substrate, removing a part of the wiring layer so as to form a wiring on the substrate, a part of the underlying metal film being exposed other than a part where the wiring is formed, removing the exposed part of the underlying metal film by using the wiring as a mask, forming a barrier metal film on the wiring so as to cover the wiring and the underlying metal film underneath the wiring, forming a post terminal by electroless plating so that the post terminal is electrically connected to said wiring and providing a sealing resin so as to cover said substrate except a position at which said post terminal is formed.
Inventors
- 👤 Yutaka Makino
- 👤 Eiji Watanabe
- 👤 Hirohisa Matsuki
- 👤 Tetsuya Fujisawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:27
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10P; H10P14/00; H10P14/40; H10P14/46; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/654; H10W70/656; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/019; H10W72/20; H10W72/221; H10W72/251; H10W72/29; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
151 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a wiring layer on an underlying metal film formed on a substrate, the wiring layer being electrically connected to an electrode pad formed on a substrate; removing a part of the wiring layer so as to form a wiring on the substrate, a part of the underlying metal film being exposed other than a part where the wiring is formed; removing the exposed part of the underlying metal film by using the wiring as a mask; forming a barrier metal film on the wiring so as to cover the wiring and the underlying metal film underneath the wiring; forming a post terminal by electroless plating so that the post terminal is electrically connected to said wiring; and providing a sealing resin so as to cover said substrate except a position at which said post terminal is formed.
Claim 2
Independent Claim
151 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a wiring layer on an underlying metal film formed on a substrate, the wiring layer being electrically connected to an electrode pad formed on a substrate; removing a part of the wiring layer so as to form a wiring on the substrate, a part of the underlying metal film being exposed other than a part where the wiring is formed; removing the exposed part of the underlying metal film by using the wiring as a mask; forming a barrier metal film on the wiring so as to cover the wiring and the underlying metal film underneath the wiring; forming a post terminal by electroless plating so that the post terminal is electrically connected to said wiring; and providing a sealing resin so as to cover said substrate except a position at which said post terminal is formed.
Claim 3
Dependent Claim
60 words
The method as claimed in claim 1 , wherein said step of providing the sealing resin is performed before said step of forming the post terminal, and said step of providing the sealing resin includes forming an opening in said sealing resin so as to form said post terminal in the opening in said step of forming the post terminal.
Claim 4
Dependent Claim
26 words
The method as claimed in claim 2 , wherein said step of providing the sealing resin includes selecting an alkali-proof material to form said sealing resin.
Claim 5
Dependent Claim
76 words
The method as claimed in claim 1 , wherein the step of forming the barrier metal film on said wiring is performed after said step of removing the barrier metal film so that said wiring and the barrier metal film underneath the wiring are coated with the baffler metal film, and said step of forming the post terminal and said step of providing the sealing resin are performed after the step of forming the metal film.
Claim 6
Dependent Claim
16 words
The method as claimed in claim 4 , wherein said wiring is formed of copper (Cu).
Claim 7
Dependent Claim
34 words
The method as claimed in claim 1 , further comprising the step of forming at least one metal film on said post terminal by electroless plating after said step of forming the post terminal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-05-19 | 2006-11-18 | 2007-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-19 | 2010-11-18 | 2011-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-19 | 2014-11-18 | 2015-05-20 | $7700.00 | Window Closed / Lapsed |