US6563152B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
Assignee: Intel Corp
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Filing: 2000-12-29
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Granted: 2003-05-13
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Expires: 2020-12-29
Abstract
Abstract A method for forming a strain layer on an underside of a channel in an MOS transistor in order to produce a mechanical stress in the channel, increasing a mobility of carriers in the channel and an apparatus produced from such a method.
Inventors
- 👤 Brian Roberds
- 👤 Brian S. Doyle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:41
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/051; H10D30/0516; H10D30/60; H10D30/751; H10D30/791; H10D30/798; H10D30/80; H10D30/801; H10D62/00; H10D62/01; H10D62/021
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
86 words
An apparatus comprising: a semiconductor substrate; a gate stack formed over the semiconductor substrate; a channel; an a strain layer formed on a portion of an underside of the channel; wherein the semiconductor substrate has a removed portion defining an open region and a retained portion under the gate stack defining the channel, the open region underlying the channel exposing a portion of the underside of the channel, the strain layer formed in the open region on a portion of the exposed underside of the channel.
Claim 2
Independent Claim
86 words
An apparatus comprising: a semiconductor substrate; a gate stack formed over the semiconductor substrate; a channel; an a strain layer formed on a portion of an underside of the channel; wherein the semiconductor substrate has a removed portion defining an open region and a retained portion under the gate stack defining the channel, the open region underlying the channel exposing a portion of the underside of the channel, the strain layer formed in the open region on a portion of the exposed underside of the channel.
Claim 3
Dependent Claim
32 words
The apparatus of claim 1 further comprising: a source tip formed adjacent to a first sidewall of the channel; and a drain tip formed adjacent to a first sidewall of the channel.
Claim 4
Dependent Claim
24 words
The apparatus of claim 2 further comprising: a source formed adjacent to the source tip; and a drain formed adjacent to the drain tip.
Claim 5
Dependent Claim
15 words
The apparatus of claim 3 wherein the source and drain have a graded dopant distribution.
Claim 6
Independent Claim
70 words
An apparatus comprising: a semiconductor substrate; a gate stack formed above the semiconductor substrate; the semiconductor substrate having a removed portion defining an open region and a retained portion under the gate stack defining a channel the open region underlying the channel exposing a portion of an underside of the channel; and a strain layer formed in the open region on a portion of the exposed underside of the channel.
Claim 7
Independent Claim
70 words
An apparatus comprising: a semiconductor substrate; a gate stack formed above the semiconductor substrate; the semiconductor substrate having a removed portion defining an open region and a retained portion under the gate stack defining a channel the open region underlying the channel exposing a portion of an underside of the channel; and a strain layer formed in the open region on a portion of the exposed underside of the channel.
Claim 8
Dependent Claim
40 words
The apparatus of claim 5 further comprising: a source tip formed in the open region adjacent to a first sidewall of the channel; and a drain tip formed in the open region adjacent to a first sidewall of the channel.
Claim 9
Dependent Claim
32 words
The apparatus of claim 6 further comprising: a source formed in the open region adjacent to the source tip; and a drain formed in the open region adjacent to the drain tip.
Claim 10
Dependent Claim
15 words
The apparatus of claim 7 wherein the source and drain have a graded dopant distribution.
Claim 11
Independent Claim
99 words
An apparatus comprising: an insulation layer; a semiconductor substrate formed above the insulation layer; a gate stack formed on the semiconductor substrate; a channel disposed below the gate stack; and a strain layer formed on a portion of an underside of the channel; wherein the semiconductor substrate has a removed portion defining an open region and a retained portion under the gate stack defining the channel, the open region underlying the channel exposing a portion of the underside of the channel, the strain layer formed in the open region on a portion of the exposed underside of the channel.
Claim 12
Independent Claim
99 words
An apparatus comprising: an insulation layer; a semiconductor substrate formed above the insulation layer; a gate stack formed on the semiconductor substrate; a channel disposed below the gate stack; and a strain layer formed on a portion of an underside of the channel; wherein the semiconductor substrate has a removed portion defining an open region and a retained portion under the gate stack defining the channel, the open region underlying the channel exposing a portion of the underside of the channel, the strain layer formed in the open region on a portion of the exposed underside of the channel.
Claim 13
Dependent Claim
40 words
The apparatus of claim 9 further comprising: a source tip formed in the open region adjacent to a first sidewall of the channel; and a drain tip formed in the open region adjacent to a first sidewall of the channel.
Claim 14
Dependent Claim
32 words
The apparatus of claim 10 further comprising: a source formed in the open region adjacent to the source tip; and a drain formed in the open region adjacent to the drain tip.
Claim 15
Dependent Claim
15 words
The apparatus of claim 11 wherein the source and drain have a graded dopant distribution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-05-12 | 2006-11-11 | 2007-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-12 | 2010-11-11 | 2011-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-12 | 2014-11-11 | 2015-05-13 | $7700.00 | Window Closed / Lapsed |