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US6558747B2
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Method of forming insulating film and process for producing semiconductor device
Assignee: Toshiba Corp
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Filing: 2001-12-14
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Granted: 2003-05-06
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Expires: 2021-12-14
Abstract
Abstract A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.
Inventors
- 👤 Rempei Nakata
- 👤 Nobuhide Yamada
- 👤 Hideshi Miyajima
- 👤 Akihiro Kojima
- 👤 Takahiko Kurosawa
- 👤 Eiji Hayashi
- 👤 Youngsoon Seo
- 👤 Atsushi Shiota
- 👤 Kinji Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:58
CPC Classifications
C; C08; C08G; C08G77/00; C08G77/04; C08G77/14; C08G77/16; C09; C09D; C09D183/00; C09D183/04; C09D183/06; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
83 words
A method of forming an insulating film, which comprises the steps of: dissolving in a solvent a first polymer and a second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times the weight average molecular weight of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film, thereby forming an organosilicon oxide film.
Claim 2
Independent Claim
83 words
A method of forming an insulating film, which comprises the steps of: dissolving in a solvent a first polymer and a second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times the weight average molecular weight of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film, thereby forming an organosilicon oxide film.
Claim 3
Dependent Claim
35 words
The method of forming an insulating film of claim 1 , wherein the weight average molecular weight of the first polymer is at least 100 times the weight average molecular weight of the second polymer.
Claim 4
Dependent Claim
39 words
The method of forming an insulating film of claim 1 , wherein the weight average molecular weight of the first polymer is 1,000,000 or higher and the weight average molecular weight of the second polymer is 10,000 or lower.
Claim 5
Dependent Claim
29 words
The method of forming an insulating film of claim 1 , wherein the proportion of the first polymer to the second polymer is from 10/90 to 90/10 by weight.
Claim 6
Dependent Claim
29 words
The method of forming an insulating film of claim 1 , wherein the proportion of the first polymer to the second polymer is from 20/80 to 80/20 by weight.
Claim 7
Dependent Claim
74 words
The method of forming an insulating film of claim 2 , wherein the chemical solution further contains a third polymer comprising methylpolysiloxane as the main component, the third polymer having a weight average molecular weight lower than the weight average molecular weight of the first polymer and higher than the weight average molecular weight of the second polymer, and the organosilicon oxide film is formed by thermally hardening the first, second, and third polymers.
Claim 8
Dependent Claim
50 words
The method of forming an insulating film of claim 6 , wherein the weight average molecular weight of the third polymer is not higher than one-tenth the weight average molecular weight of the first polymer and is at least 10 times the weight average molecular weight of the second polymer.
Claim 9
Dependent Claim
37 words
The method of forming an insulating film of claim 6 , wherein the content of the third polymer is from 5 to 80% by weight based on the total amount of the first, second and third polymers.
Claim 10
Dependent Claim
25 words
The method of forming an insulating film of claim 1 , wherein the heat treatment is conducted at a temperature of 400° C. or lower.
Claim 11
Dependent Claim
21 words
The method of forming an insulating film of claim 1 , wherein the heat treatment is conducted in a nitrogen atmosphere.
Claim 12
Dependent Claim
98 words
A process for producing a semiconductor device, which comprises the steps of: dissolving in a solvent a first polymer and a second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times the weight average molecular weight of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate having elements arranged thereon to form a coating film; heat-treating the coating film, thereby forming an interlayer dielectric comprising an organosilicon oxide film; and forming a wiring on the interlayer dielectric.
Claim 13
Dependent Claim
98 words
A process for producing a semiconductor device, which comprises the steps of: dissolving in a solvent a first polymer and a second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times the weight average molecular weight of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate having elements arranged thereon to form a coating film; heat-treating the coating film, thereby forming an interlayer dielectric comprising an organosilicon oxide film; and forming a wiring on the interlayer dielectric.
Claim 14
Dependent Claim
35 words
The process for producing a semiconductor device of claim 11 , wherein the weight average molecular weight of the first polymer is at least 100 times the weight average molecular weight of the second polymer.
Claim 15
Dependent Claim
39 words
The process for producing a semiconductor device of claim 11 , wherein the weight average molecular weight of the first polymer is 1,000,000 or higher and the weight average molecular weight of the second polymer is 10,000 or lower.
Claim 16
Dependent Claim
29 words
The process for producing a semiconductor device of claim 11 , wherein the proportion of the first polymer to the second polymer is from 10/90 to 90/10 by weight.
Claim 17
Dependent Claim
29 words
The process for producing a semiconductor device of claim 11 , wherein the proportion of the first polymer to the second polymer is from 20/80 to 80/20 by weight.
Claim 18
Dependent Claim
74 words
The process for producing a semiconductor device of claim 12 , wherein the chemical solution further contains a third polymer comprising methylpolysiloxane as the main component, the third polymer having a weight average molecular weight lower than the weight average molecular weight of the first polymer and higher than the weight average molecular weight of the second polymer, and the organosilicon oxide film is formed by thermally hardening the first, second and third polymers.
Claim 19
Dependent Claim
49 words
The process for producing a semiconductor device of claim 16 , wherein the weight average molecular weight of the third polymer is not higher than one-tenth the weight average molecular weight of the first polymer and is at least 10 times the weight-average molecular weight of the second polymer.
Claim 20
Dependent Claim
37 words
The process for producing a semiconductor device of claim 16 , wherein the content of the third polymer is from 5 to 80% by weight based on the total amount of the first, second, and third polymers.
Claim 21
Dependent Claim
25 words
The process for producing a semiconductor device of claim 11 , wherein the heat treatment is conducted at a temperature of 400° C. or lower.
Claim 22
Dependent Claim
21 words
The process for producing a semiconductor device of claim 11 , wherein the heat treatment is conducted in a nitrogen atmosphere.
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