US6548385B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing pitch between conductive features, and structure formed using the method
Assignee: Macronix International Co Ltd
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Filing: 2002-06-12
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Granted: 2003-04-15
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Expires: 2022-06-12
Abstract
Abstract A method is described which may be used to reduce a pitch between conductive features. One embodiment of the method involves forming a structure including a substrate, a conductive layer on the substrate, multiple photoresist features arranged on the conductive layer, a polymer layer on top surfaces and sidewalls of each of the photoresist features, and a material layer on and around the photoresist features and the polymer layers. An upper portion of the material layer is removed such that upper surfaces of the photoresist features and the polymer layer are exposed, and a remaining portion of the material layer remains. The polymer layer is removed, and the photoresist features and the remaining portion of the material layer are used as etch masks to pattern the conductive layer, thereby producing a number of conductive features. The photoresist features and the remaining portion of the material layer are removed.
Inventors
- 👤 Jiun-Ren Lai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:35
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/0133; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D84/02; H10D84/03; H10D84/038; H10P50/00; H10P50/71; H10P76/20; H10P76/204; H10P76/4088
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
110 words
A method, comprising: providing a structure comprising a substrate, a conductive layer on the substrate, a plurality of photoresist features arranged on the conductive layer, a polymer layer on sidewalls of each of the photoresist features, and a material layer on and around the polymer layer and photoresist features; exposing upper surfaces of the photoresist features such that a remaining portion of the material layer remains; removing the polymer layer; using the photoresist features and the remaining portion of the material layer as etch masks to pattern the conductive layer, thereby producing a plurality of conductive features; and removing the photoresist features and the remaining portion of the material layer.
Claim 2
Independent Claim
110 words
A method, comprising: providing a structure comprising a substrate, a conductive layer on the substrate, a plurality of photoresist features arranged on the conductive layer, a polymer layer on sidewalls of each of the photoresist features, and a material layer on and around the polymer layer and photoresist features; exposing upper surfaces of the photoresist features such that a remaining portion of the material layer remains; removing the polymer layer; using the photoresist features and the remaining portion of the material layer as etch masks to pattern the conductive layer, thereby producing a plurality of conductive features; and removing the photoresist features and the remaining portion of the material layer.
Claim 3
Dependent Claim
39 words
The method of claim 1 , wherein the photoresist features have a pitch, and wherein the conductive features have a pitch, and wherein the pitch of the conductive features is approximately half of the pitch of the photoresist features.
Claim 4
Dependent Claim
33 words
The method of claim 1 , wherein the photoresist features are formed using a photolithographic process, and wherein a pitch of the photoresist features is as small as the photolithographic process will allow.
Claim 5
Dependent Claim
34 words
The method of claim 1 , wherein the material layer comprises a material that is volatilized at a temperature greater than a temperature at which a polymer material of the polymer layer is volatilized.
Claim 6
Dependent Claim
34 words
The method of claim 1 , wherein the photoresist layer comprises a material that is volatilized at a temperature greater than a temperature at which a polymer material of the polymer layer is volatilized.
Claim 7
Dependent Claim
23 words
The method of claim 1 , wherein the material layer comprises a bottom anti-reflective coating (BARC) material, or a spin-on glass (SOG) material.
Claim 8
Dependent Claim
39 words
The method of claim 1 , wherein when the material layer comprises a BARC material, and wherein the removing of the photoresist features and the remaining portion of the material layer can be carried out in a single process.
Claim 9
Dependent Claim
22 words
The method of claim 1 , wherein the forming of the polymer layer is accomplished using a dielectric resolution enhancement coating technique.
Claim 10
Dependent Claim
19 words
The method of claim 8 , wherein the forming of the polymer layer is carried out in an etcher.
Claim 11
Dependent Claim
65 words
The method of claim 1 , wherein: the providing of a structure comprises providing a structure having a polymer layer on sidewalls and upper surfaces of each of the photoresist features; and the exposing of upper surfaces of the photoresist features comprises removing portions of the material layer from upper surfaces of the photoresist features to thereby expose the upper surfaces of the photoresist features.
Claim 12
Dependent Claim
19 words
The method of claim 1 , wherein the photoresist features of the structure have been trimmed in an etcher.
Claim 13
Dependent Claim
10 words
A structure formed using the method of claim 3 .
Claim 14
Dependent Claim
73 words
The method of claim 1 , wherein the providing of a structure comprises: forming the conductive layer on the substrate; forming a photoresist layer on the conductive layer; patterning the photoresist layer to form the plurality of photoresist features; trimming the photoresist features; and forming the polymer layer on top surfaces and sidewalls of each of the photoresist features; forming the material layer on and around the photoresist features and the polymer layer.
Claim 15
Dependent Claim
39 words
The method of claim 13 , wherein the photoresist features have a pitch, and wherein the conductive features have a pitch, and wherein the pitch of the conductive features is approximately half of the pitch of the photoresist features.
Claim 16
Dependent Claim
33 words
The method of claim 13 , wherein the photoresist features are formed using a photolithographic process, and wherein the pitch of the photoresist features is as small as the photolithographic process will allow.
Claim 17
Dependent Claim
63 words
The method of claim 13 , wherein: when the material layer comprises a material that is volatilized at a temperature greater than a temperature at which a polymer material of the polymer layer is volatilized; and the photoresist layer comprises a material that is volatilized at a temperature greater than a temperature at which a polymer material of the polymer layer is volatilized.
Claim 18
Dependent Claim
22 words
The method of claim 13 , wherein the forming of the polymer layer is accomplished using a dielectric resolution enhancement coating technique.
Claim 19
Dependent Claim
20 words
The method of claim 13 , wherein the trimming of the photoresist features photoresist is carried out in an etcher.
Claim 20
Dependent Claim
30 words
The method of claim 13 , wherein trimming of the photoresist features photoresist is carried out in an atmosphere comprising oxygen (O 2 ) gas and hydrogen bromide (HBr) gas.
Claim 21
Dependent Claim
10 words
A structure formed using the method of claim 15 .
References Cited (Backward Citations)
US4441791A
Cited
US6136652A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-04-14 | 2006-10-14 | 2007-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-14 | 2010-10-14 | 2011-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-14 | 2014-10-14 | 2015-04-15 | $7700.00 | Window Closed / Lapsed |