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Patent US6542533B1 successfully refreshed from Google Patents.
US6542533B1
Expired / Lapsed
US
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Process for obtaining ultra-low reflectivity facets for electro-absorption modulated lasers
Assignee: Qorvo US Inc
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Filing: 2000-04-10
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Granted: 2003-04-01
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Expires: 2020-04-10
Abstract
Abstract An electro-absorption modulated laser is provided having three sections, a laser section, an isolation section, and a modulation section. The laser section produces light along a straight waveguide path. The modulation section also has a straight waveguide path, but is angled with respect to the laser section's path. The isolation section between the other two sections includes a path that is collinear with the respective laser or modulation section at each end, but is gradually curved in the middle.
Inventors
- 👤 Padman Parayanthal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0265
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
74 words
A semiconductor laser, comprising: a laser section having a first optical waveguide; a modulation section having a second optical waveguide; an isolation section between said laser section and said modulation section having a third optical waveguide, said third optical waveguide being in optical communication with said first and second waveguides, said third optical waveguide having a bend portion in which said second waveguide is positioned at an angle with respect to said first waveguide.
Claim 2
Dependent Claim
74 words
A semiconductor laser, comprising: a laser section having a first optical waveguide; a modulation section having a second optical waveguide; an isolation section between said laser section and said modulation section having a third optical waveguide, said third optical waveguide being in optical communication with said first and second waveguides, said third optical waveguide having a bend portion in which said second waveguide is positioned at an angle with respect to said first waveguide.
Claim 3
Dependent Claim
17 words
A semiconductor laser as in claim 1 , in which said first and second waveguides are linear.
Claim 4
Dependent Claim
21 words
A semiconductor laser as in claim 1 , in which said angle is within the range of 4 to 10 degrees.
Claim 5
Dependent Claim
38 words
A semiconductor laser as in claim 1 , in which said second waveguide has two ends, one of which is in optical communication with said third waveguide and the other of which is coated with an anti-reflective coating.
Claim 6
Dependent Claim
38 words
A semiconductor laser as in claim 1 , in which said first waveguide has two ends, one of which is in optical communication with said third waveguide and the other of which is coated with a high-reflectivity coating.
Claim 7
Dependent Claim
16 words
A semiconductor laser as in claim 1 wherein the laser section comprises a distributed feedback laser.
References Cited (Backward Citations)
US6118802A
Cited
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