US6541331B2
Expired / Lapsed
US
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Method of manufacturing high dielectric constant material
Assignee: GlobalFoundries Inc
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Filing: 2001-08-09
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Granted: 2003-04-01
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Expires: 2021-08-09
Abstract
Abstract A process of forming a high-k dielectric in an integrated circuit structure is disclosed. The process cleans a substrate to remove residual organic materials and strip native oxide from the surface of the substrate. Next, the process introduces precursors on the substrate in molar ratios consistent with formation of dielectric glass films. Following that, the process oxidizes the precursors, heats the precursors, and cools the precursors at a rate that avoids crystallization of the precursors.
Inventors
- 👤 Michael P. Chudzik
- 👤 Lawrence Clevenger
- 👤 Louis L. Hsu
- 👤 Deborah A. Neumayer
- 👤 Joseph F. Shepard, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:24
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/22; C23C16/30; C23C16/40; C23C16/56; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
72 words
A process of forming a high-k dielectric in an integrated circuit structure comprising: introducing precursors on said substrate in an atomic level chemical vapor deposition that comprises between 20%-50% La 2 O 3 and 80%-50% Al 2 O 3 ; oxidizing said precursors; and heating said precursors, wherein said introducing and said oxidizing of said precursors is preformed in a manner so as to form an amorphous glass dielectric on said substrate.
Claim 2
Dependent Claim
72 words
A process of forming a high-k dielectric in an integrated circuit structure comprising: introducing precursors on said substrate in an atomic level chemical vapor deposition that comprises between 20%-50% La 2 O 3 and 80%-50% Al 2 O 3 ; oxidizing said precursors; and heating said precursors, wherein said introducing and said oxidizing of said precursors is preformed in a manner so as to form an amorphous glass dielectric on said substrate.
Claim 3
Dependent Claim
24 words
The process in claim 1 , wherein said introducing of said precursors is performed in molar ratios consistent with formation of dielectric glass films.
Claim 4
Dependent Claim
30 words
The process in claim 1 , wherein said introducing of said precursors comprises an atomic level chemical vapor deposition of La 2 O 3 and Al 2 O 3 .
Claim 5
Dependent Claim
20 words
The process in claim 1 , further comprising, before said introducing of said precursors on said substrate, cleaning said substrate.
Claim 6
Dependent Claim
25 words
The process in claim 1 , wherein said introducing and said oxidizing of said precursors produces a dielectric that remains amorphous up to 1000° C.
Claim 7
Dependent Claim
26 words
The process in claim 1 , wherein said introducing and said oxidizing of said precursors produces a dielectric that has a dielectric constant of approximately 20.
Claim 8
Dependent Claim
82 words
A process of forming an insulator for a deep trench capacitor in an integrated circuit structure comprising: forming deep trenches in a substrate introducing precursors on said substrate in an atomic level chemical vapor deposition that comprises between 20%-50% La 2 O 3 and 80%-50% Al 2 O 3 ; oxidizing said precursors; and heating said precursors, wherein said introducing and said oxidizing of sad precursors is preformed in a manner so as to form an amorphous glass dielectric on said substrate.
Claim 9
Dependent Claim
82 words
A process of forming an insulator for a deep trench capacitor in an integrated circuit structure comprising: forming deep trenches in a substrate introducing precursors on said substrate in an atomic level chemical vapor deposition that comprises between 20%-50% La 2 O 3 and 80%-50% Al 2 O 3 ; oxidizing said precursors; and heating said precursors, wherein said introducing and said oxidizing of sad precursors is preformed in a manner so as to form an amorphous glass dielectric on said substrate.
Claim 10
Dependent Claim
24 words
The process in claim 7 , wherein said introducing of said precursors is performed in molar ratios consistent with formation of dielectric glass film.
Claim 11
Dependent Claim
30 words
The process in claim 7 , wherein said introducing of said precursors comprises an atomic level chemical vapor deposition of La 2 O 3 and Al 2 O 3 .
Claim 12
Dependent Claim
20 words
The process in claim 7 , further comprising, before said introducing of said precursors on said substrate, cleaning said substrate.
Claim 13
Dependent Claim
25 words
The process in claim 7 , wherein said introducing and said oxidizing of said precursors produces a dielectric that remains amorphous up to 1000° C.
Claim 14
Dependent Claim
26 words
The process in claim 7 , wherein said introducing and said oxidizing of said precursors produces a dielectric that has a dielectric constant of approximately 20.
References Cited (Backward Citations)
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