Multiple exposure device formation

Claim 2

An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element, said method comprising: a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist; and a second exposure step for exposing the resist with a light pattern related to the first and second elements, wherein a light component, of the light pattern, related to the first element bears an exposure amount greater than the threshold, a light component, of the light pattern, related to the second element bears an exposure amount not greater than the threshold and is to be combined with light in a portion of the interference fringe, and a sum of the exposure amount of the light component related to the second element and an exposure amount provided by the light in the portion of the interference fringe is greater than the threshold.

Claim 3

A method according to claim 1 , further comprising applying a multiplex exposure amount distribution in the second exposure step.

Claim 4

A method according to claim 2 , further comprising performing the second exposure step by use of plural masks having different patterns.

Claim 5

A method according to claim 2 , further comprising performing the second exposure step by use of a mask with plural transparent regions having different transmissivities.

Claim 6

A method according to claim 1 , further comprising performing the first exposure step by use of a pattern of a phase shift mask and a projection exposure apparatus.

Claim 7

A method according to claim 1 , further comprising performing the first exposure step by use of an interferometer.

Claim 8

A method according to claim 1 , further comprising performing the first and second exposure steps by use of a projection exposure apparatus.

Claim 9

A method according to claim 7 , further comprising performing the first exposure step by use of a phase shift mask.

Claim 10

A method according to claim 1 , further comprising applying a multiplex exposure amount distribution in the first exposure step.

Claim 12

An exposure method for exposing a resist so that, with a development process, a first fine pattern and a second fine pattern having a linewidth larger than that of the first fine pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first fine pattern, with an interference fringe provided by interference of plural light beams, through an exposure amount with which the first fine pattern cannot be formed with the development process; and a second exposure step for exposing, with light, a portion of the resist in relation to the second fine pattern through an exposure amount with which the second fine pattern can be formed with the development process, and for exposing, with light, another portion of the resist in relation to the first fine pattern through an exposure amount with which the first fine pattern cannot be formed with the development process, such that the first fine pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 13

An exposure method for exposing a resist so that, with a development process, a first fine pattern and a second fine pattern having a linewidth larger than that of the first fine pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first fine pattern, with an interference fringe provided by interference of plural light beams, through an exposure amount with which the first fine pattern cannot be formed with the development process; and a second exposure step for exposing, with light, a portion of the resist in relation to the second fine pattern through an exposure amount with which the second fine pattern can be formed with the development process, and for exposing, with light, another portion of the resist in relation to the first fine pattern through an exposure amount with which the first fine pattern cannot be formed with the development process, such that the first fine pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 14

A method according to claim 11 , wherein the first and second fine patterns are contiguous.

Claim 15

A method according to claim 11 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 16

A method according to claim 12 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 17

An exposure method for exposing a resist so that, with a development process, a first fine pattern and a second fine pattern having a linewidth larger than that of the first fine pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first fine pattern through an exposure amount with which the first fine pattern cannot be formed with the development process; and a second exposure step for exposing, with light, the resist in relation to the second fine pattern through an exposure amount with which the second fine pattern can be formed with the development process, and for exposing, with light, the resist in relation to the first fine pattern through an exposure amount with which the first fine pattern cannot be formed with the development process, such that the first fine pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 18

An exposure method for exposing a resist so that, with a development process, a first fine pattern and a second fine pattern having a linewidth larger than that of the first fine pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first fine pattern through an exposure amount with which the first fine pattern cannot be formed with the development process; and a second exposure step for exposing, with light, the resist in relation to the second fine pattern through an exposure amount with which the second fine pattern can be formed with the development process, and for exposing, with light, the resist in relation to the first fine pattern through an exposure amount with which the first fine pattern cannot be formed with the development process, such that the first fine pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 19

A method according to claim 15 , wherein the first and second fine patterns are contiguous.

Claim 20

A method according to claim 15 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 21

A method according to claim 16 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 22

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern, with an interference fringe provided by interference of plural light beams through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, a portion of the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, another portion of the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 23

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern, with an interference fringe provided by interference of plural light beams through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, a portion of the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, another portion of the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 24

A method according to claim 19 , wherein the first and second patterns are contiguous.

Claim 25

A method according to claim 19 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 26

A method according to claim 20 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 27

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 28

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 29

A method according to claim 23 , wherein the first and second patterns are contiguous.

Claim 30

A method according to claim 23 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 31

A method according to claim 24 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 32

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern, with an interference fringe provided by interference of plural light beams through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, a portion of the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, another portion of the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 33

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern, with an interference fringe provided by interference of plural light beams through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, a portion of the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, another portion of the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 34

A method according to claim 27 , wherein the first and second patterns are contiguous.

Claim 35

A method according to claim 27 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 36

A method according to claim 28 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 37

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 38

An exposure method for exposing a resist so that, with a development process, a first pattern and a second pattern are formed on the resist, said method comprising: a first exposure step for exposing the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process; and a second exposure step for exposing, with light, the resist in relation to the second pattern through an exposure amount with which the second pattern can be formed with the development process, and for exposing, with light, the resist in relation to the first pattern through an exposure amount with which the first pattern cannot be formed with the development process, such that the first pattern can be formed as a result of accumulation of the exposure amounts provided by said first and second exposure steps.

Claim 39

A method according to claim 31 , wherein the first and second patterns are contiguous.

Claim 40

A method according to claim 31 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 41

A method according to claim 32 , wherein said first and second exposure steps are performed sequentially in the named order, sequentially in an order opposite to the named order, or simultaneously.

Claim 43

An exposure method for performing exposure of a resist in relation to a pattern, said method comprising: a step of applying a first exposure amount distribution on the basis of a dual-beam interference exposure; and a step of applying a second exposure amount distribution including a first portion having a smaller exposure amount, not being zero, and a second portion having a larger exposure amount; performing the exposure of a first region of the pattern by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution; and performing the exposure of a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 44

An exposure method for performing exposure of a resist in relation to a pattern, said method comprising: a step of applying a first exposure amount distribution on the basis of a dual-beam interference exposure; and a step of applying a second exposure amount distribution including a first portion having a smaller exposure amount, not being zero, and a second portion having a larger exposure amount; performing the exposure of a first region of the pattern by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution; and performing the exposure of a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 45

A method according to claim 36 , further comprising performing the dual-beam interference exposure by illuminating a mask having an array of at least one of a phase shifter and a light blocking portion.

Claim 46

A method according to claim 36 , wherein the step of applying the first exposure amount distribution is performed before the step of applying the second exposure amount distribution.

Claim 47

A method according to claim 37 , wherein the step of applying the first exposure amount distribution is performed before the step of applying the second exposure amount distribution.

Claim 48

A method according to claim 36 , wherein the step of applying the first exposure amount distribution is performed after the step of applying the second exposure amount distribution.

Claim 49

A method according to claim 37 , wherein the step of applying the first exposure amount distribution is performed after the step of applying the second exposure amount distribution.

Claim 50

A method according to claim 36 , wherein the first region of the pattern is a portion of the pattern wherein a smallest linewidth is included.

Claim 51

A method according to claim 37 , wherein the first region of the pattern is a portion of the pattern wherein a smallest line width is included.

Claim 52

A method according to claim 36 , wherein the pattern comprises a circuit pattern.

Claim 53

A method according to claim 37 , wherein the pattern comprises a circuit pattern.

Claim 54

An exposure method for performing exposure of a resist in relation to a pattern, said method comprising: a step of applying a first exposure amount distribution having an exposure amount not greater than an exposure threshold value of the resist, on the basis of a dual-beam interference exposure using a first mask having an array of at least one of a phase shifter and a light blocking portion; a step of applying a second exposure amount distribution including a first portion having an exposure amount not being zero but being not greater than the exposure threshold value of the resist, and a second portion having an exposure amount not less than the exposure threshold value; performing the exposure of a first region of the pattern by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution; and performing the exposure of a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 55

An exposure method for performing exposure of a resist in relation to a pattern, said method comprising: a step of applying a first exposure amount distribution having an exposure amount not greater than an exposure threshold value of the resist, on the basis of a dual-beam interference exposure using a first mask having an array of at least one of a phase shifter and a light blocking portion; a step of applying a second exposure amount distribution including a first portion having an exposure amount not being zero but being not greater than the exposure threshold value of the resist, and a second portion having an exposure amount not less than the exposure threshold value; performing the exposure of a first region of the pattern by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution; and performing the exposure of a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 56

A method according to claim 46 , wherein the step of applying the first exposure amount distribution is performed before the step of applying the second exposure amount distribution.

Claim 57

A method according to claim 46 , wherein the step of applying the first exposure amount distribution is performed after the step of applying the second exposure amount distribution.

Claim 58

A method according to claim 46 , wherein the first region of the pattern is a portion of the pattern wherein a smallest linewidth is included.

Claim 59

A method according to claim 46 , wherein the first mask comprises one or two masks, and wherein the second mask comprises one or two masks.

Claim 60

A method according to claim 46 , wherein the pattern comprises a circuit pattern.

Claim 61

A mask for producing the first exposure amount distribution in the exposure method as recited in any one of claims 36 - 51 .

Claim 62

A mask for producing the second exposure amount distribution in the exposure method as recited in any one of claims 36 - 51 .

Claim 63

An exposure apparatus for performing the exposure method as recited in any one of claims 36 - 51 .

Claim 64

A pattern forming method including a process for exposing a resist and a process for developing the resist, said method comprising: a step of applying a first exposure amount distribution on the basis of a dual-beam interference exposure; a step of applying a second exposure amount distribution including a first portion having a smaller exposure amount, not being zero, and a second portion having a larger exposure amount; forming a first region of a pattern through a portion of the first exposure amount distribution as superposed with the first portion of the second exposure amount distribution; and forming a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 65

A pattern forming method including a process for exposing a resist and a process for developing the resist, said method comprising: a step of applying a first exposure amount distribution on the basis of a dual-beam interference exposure; a step of applying a second exposure amount distribution including a first portion having a smaller exposure amount, not being zero, and a second portion having a larger exposure amount; forming a first region of a pattern through a portion of the first exposure amount distribution as superposed with the first portion of the second exposure amount distribution; and forming a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 66

A method according to claim 55 , further comprising performing the dual-beam interference exposure by illuminating a mask having an array of at least one of a phase shifter and a light blocking portion.

Claim 67

A method according to claim 55 , wherein the step of applying the first exposure amount distribution is performed before the step of applying the second exposure amount distribution.

Claim 68

A method according to claim 56 , wherein the step of applying the first exposure amount distribution is performed before the step of applying the second exposure amount distribution.

Claim 69

A method according to claim 55 , wherein the step of applying the first exposure amount distribution is performed after the step of applying the second exposure amount distribution.

Claim 70

A method according to claim 56 , wherein the step of applying the first exposure amount distribution is performed after the step of applying the second exposure amount distribution.

Claim 71

A method according to claim 55 , wherein the first region of the pattern is a portion of the pattern wherein a smallest linewidth is included.

Claim 72

A method according to claim 56 , wherein the first region of the pattern is a portion of the pattern wherein a smallest linewidth is included.

Claim 73

A method according to claim 55 , wherein the pattern comprises a circuit pattern.

Claim 74

A method according to claim 56 , wherein the pattern comprises a circuit pattern.

Claim 75

A pattern forming method including a process for exposing a resist and a process for developing the resist, said method comprising: a step of applying a first exposure amount distribution having an exposure amount not greater than an exposure threshold value of the resist, on the basis of a dual-beam interference exposure using a first mask having an array of at least one of a phase shifter and a light blocking portion; a step of applying a second exposure amount distribution including a first portion having an exposure amount not being zero but being not greater than the exposure threshold value of the resist, and a second portion having an exposure amount not less than the exposure threshold value; forming a first region of the pattern through a portion of the first exposure amount distribution as superposed with the first portion of the second exposure amount distribution; and forming a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 76

A pattern forming method including a process for exposing a resist and a process for developing the resist, said method comprising: a step of applying a first exposure amount distribution having an exposure amount not greater than an exposure threshold value of the resist, on the basis of a dual-beam interference exposure using a first mask having an array of at least one of a phase shifter and a light blocking portion; a step of applying a second exposure amount distribution including a first portion having an exposure amount not being zero but being not greater than the exposure threshold value of the resist, and a second portion having an exposure amount not less than the exposure threshold value; forming a first region of the pattern through a portion of the first exposure amount distribution as superposed with the first portion of the second exposure amount distribution; and forming a second region of the pattern through the second portion of the second exposure amount distribution as superposed with another portion of the first exposure amount distribution.

Claim 77

A method according to claim 65 , wherein the step of applying the first exposure amount distribution is performed before the step of applying the second exposure amount distribution.

Claim 78

A method according to claim 65 , wherein the step of applying the first exposure amount distribution is performed after the step of applying the second exposure amount distribution.

Claim 79

A method according to claim 65 , wherein the first region of the pattern is a portion of the pattern wherein a smallest linewidth is included.

Claim 80

A method according to claim 65 , wherein the first mask comprises one or two masks, and the second mask comprises one or two masks.

Claim 81

A method according to claim 65 , wherein the pattern comprises a circuit pattern.

Claim 83

An exposure method for printing a particular pattern on a resist, said method comprising: a first step for applying a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, through a dual-beam interference exposure process using a first mask having an array of at least one of a phase shifter and a light blocking portion; and a second step for applying a second exposure amount distribution, including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value of the resist and a second portion with an exposure amount not less than the exposure threshold value of the resist, through an exposure process using a second mask having a pattern being analogous to the particular pattern to be printed on the resist, wherein (i) the printing of a certain portion of the particular pattern to be printed on the resist is accomplished by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, being not equal to zero but being not greater than the exposure threshold value, and (ii) the printing of another portion of the particular pattern is accomplished by use of the second portion of the second exposure amount distribution, being not less than the exposure threshold value and being superposed on another portion of the first exposure amount distribution.

Claim 84

An exposure method for printing a particular pattern on a resist, said method comprising: a first step for applying a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, through a dual-beam interference exposure process using a first mask having an array of at least one of a phase shifter and a light blocking portion; and a second step for applying a second exposure amount distribution, including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value of the resist and a second portion with an exposure amount not less than the exposure threshold value of the resist, through an exposure process using a second mask having a pattern being analogous to the particular pattern to be printed on the resist, wherein (i) the printing of a certain portion of the particular pattern to be printed on the resist is accomplished by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, being not equal to zero but being not greater than the exposure threshold value, and (ii) the printing of another portion of the particular pattern is accomplished by use of the second portion of the second exposure amount distribution, being not less than the exposure threshold value and being superposed on another portion of the first exposure amount distribution.

Claim 85

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying a first exposure amount distribution to the resist on the basis of dual-beam interference exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion, of the first exposure amount distribution.

Claim 86

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying a first exposure amount distribution to the resist on the basis of dual-beam interference exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion, of the first exposure amount distribution.

Claim 87

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, on the basis of dual-beam interference exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 88

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, on the basis of dual-beam interference exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 89

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying a first exposure amount distribution to the resist on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 90

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying a first exposure amount distribution to the resist on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 91

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than the exposure threshold value of the resist, on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 92

An exposure method for exposing a resist in relation to a pattern, comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than the exposure threshold value of the resist, on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value, by use of a mask having a pattern analogous to the pattern, wherein exposure in relation to a portion of the pattern is performed by superposing a portion of the first exposure amount distribution and the first portion of the second exposure amount distribution, and wherein exposure in relation to another portion of the pattern is performed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 96

A mask to be used in an exposure method as recited in any one of claims 73 - 76 , for producing the first exposure amount distribution.

Claim 97

A mask to be used in an exposure method as recited in any one of claims 73 - 79 , for producing the second exposure amount distribution.

Claim 98

An exposure apparatus for performing an exposure method as recited in any one of claims 73 - 76 .

Claim 99

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying a first exposure amount distribution to the resist on the basis of dual-beam interference exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 100

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying a first exposure amount distribution to the resist on the basis of dual-beam interference exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 101

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, on the basis of dual-beam interference exposure: and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 102

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, on the basis of dual-beam interference exposure: and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 103

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying a first exposure amount distribution to the resist on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 104

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying a first exposure amount distribution to the resist on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with a small exposure amount not being equal to zero and a second portion with a large exposure amount, by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed on the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 105

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value, by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed an the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 106

A pattern forming method including exposure of a resist and development of the same, said method comprising: a first step for applying, to the resist and by use of a first mask having at least one of a phase shifter and a light blocking portion, a first exposure amount distribution with an exposure amount not greater than an exposure threshold value of the resist, on the basis of periodic pattern exposure; and a second step for applying, to the resist, a second exposure amount distribution including a first portion with an exposure amount not being equal to zero but being not greater than the exposure threshold value and a second portion with an exposure amount not less than the exposure threshold value, by use of a mask having a pattern analogous to the pattern, wherein a portion of the pattern is formed on the basis of a portion of the first exposure amount distribution to be superposed with the first portion of the second exposure amount distribution, and wherein another portion of the pattern is formed an the basis of the second portion of the second exposure amount distribution to be superposed with another portion of the first exposure amount distribution.

Claim 110

A mask to be used in an exposure method as recited in any one of claims 83 - 86 , for producing the first exposure amount distribution.

Claim 111

An exposure method for performing, to a workpiece to be exposed, a dual exposure having a first exposure based an a periodic pattern and a second exposure based on a pattern different from the periodic pattern, wherein: a mask to be used in the second exposure has a pattern with a portion including a pair of lines having the same linewidth and being disposed with a spacing similar to the linewidth of the paired lines, wherein I 0 is a largest value in one period of a light intensity distribution upon the workpiece in the first exposure, I 1 is a smallest value of the same, b is an intensity value, at positions corresponding to the paired lines, of a light intensity distribution on the workpiece in the second exposure, c is an intensity value at a position corresponding to a region between the paired lines, Is is a light intensity, at a region other than the pattern, of the light intensity distribution on the workpiece in the second exposure, and Ic is a sensitization threshold value of a resist on the workpiece, the light quantity ratio between the first and second exposures is 1:k, and relations I 0 <Ic, I 1 <Ic, k×c<Ic, and k×b<Ic are satisfied, when the resist is a negative type, the mask to be used for the second exposure has its pattern defined by a light transmitting portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent largest values of the light intensity distribution in the first exposure, and additionally, relations k×b+I 0 >Ic, k×c+I 1 <Ic, and k×Is+I 0 <Ic are satisfied, and when the resist is a positive type, the mask to be used for the second exposure has its pattern defined by a light blocking portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent smallest values of the light intensity distribution in the first exposure, and additionally, relations k×b+I 1 <Ic, k×c+I 0 >Ic, and k×Is+I 1 >Ic are satisfied.

Claim 112

An exposure method for performing, to a workpiece to be exposed, a dual exposure having a first exposure based an a periodic pattern and a second exposure based on a pattern different from the periodic pattern, wherein: a mask to be used in the second exposure has a pattern with a portion including a pair of lines having the same linewidth and being disposed with a spacing similar to the linewidth of the paired lines, wherein I 0 is a largest value in one period of a light intensity distribution upon the workpiece in the first exposure, I 1 is a smallest value of the same, b is an intensity value, at positions corresponding to the paired lines, of a light intensity distribution on the workpiece in the second exposure, c is an intensity value at a position corresponding to a region between the paired lines, Is is a light intensity, at a region other than the pattern, of the light intensity distribution on the workpiece in the second exposure, and Ic is a sensitization threshold value of a resist on the workpiece, the light quantity ratio between the first and second exposures is 1:k, and relations I 0 <Ic, I 1 <Ic, k×c<Ic, and k×b<Ic are satisfied, when the resist is a negative type, the mask to be used for the second exposure has its pattern defined by a light transmitting portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent largest values of the light intensity distribution in the first exposure, and additionally, relations k×b+I 0 >Ic, k×c+I 1 <Ic, and k×Is+I 0 <Ic are satisfied, and when the resist is a positive type, the mask to be used for the second exposure has its pattern defined by a light blocking portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent smallest values of the light intensity distribution in the first exposure, and additionally, relations k×b+I 1 <Ic, k×c+I 0 >Ic, and k×Is+I 1 >Ic are satisfied.

Claim 113

An exposure method for performing, to a workpiece to be exposed, a dual exposure having a first exposure based on a periodic pattern and a second exposure based on a pattern different from the periodic pattern, wherein: a mask to be used in the second exposure has a pattern including a first portion with a pair of lines having the same linewidth and being disposed with a spacing similar to the linewidth of the paired lines, and a second portion having a linewidth larger than the linewidth of the paired lines, the second portion of the pattern of the mask to be used for the second exposure is printed on the workpiece so as to stretch over more than one pattern of the periodic pattern in the first exposure, wherein I 0 is a largest value in one period of a light intensity distribution upon the workpiece in the first exposure, I 1 is a smallest value of the same, “a” is an intensity value at a position corresponding to the second portion, of a light intensity distribution on the workpiece in the second exposure, b is an intensity value, at positions corresponding to the paired lines, of a light intensity distribution upon the workpiece in the second exposure, c is an intensity value at a position corresponding to a region between the paired lines, Is is a light intensity, at a region other than the pattern, of the light intensity distribution on the workpiece in the second exposure, and Ic is a sensitization threshold value of a resist on the workpiece, and when the light quantity ratio between the first and second exposures is 1:k, (i) when the resist is a negative type, the mask to be used for the second exposure has its pattern defined by a light transmitting portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent largest values of the light intensity distribution in the first exposure, and additionally, relations I 0 <Ic, I 1 <Ic, k×c<Ic, k×b<Ic, and k×a>Ic as well as relations k×b+I 0 >Ic, k×c+I 1 <Ic, k×a+I 0 >Ic, k×a+I 1 >Ic and k×Is+I 0 <Ic are satisfied, and (ii) when the resist is a positive type, the mask to be used for the second exposure has its pattern defined by a light blocking portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent smallest values of the light intensity distribution in the first exposure, and additionally, relations I 0 <Ic, I 1 <Ic, k×a<Ic, k×b<Ic, and k×a<Ic as well as relations k×b+I 1 <Ic, k×c+I 0 >Ic, k×a+I 0 <Ic, k×a+I 0 <Ic and k×Is+I 1 >Ic are satisfied.

Claim 114

An exposure method for performing, to a workpiece to be exposed, a dual exposure having a first exposure based on a periodic pattern and a second exposure based on a pattern different from the periodic pattern, wherein: a mask to be used in the second exposure has a pattern including a first portion with a pair of lines having the same linewidth and being disposed with a spacing similar to the linewidth of the paired lines, and a second portion having a linewidth larger than the linewidth of the paired lines, the second portion of the pattern of the mask to be used for the second exposure is printed on the workpiece so as to stretch over more than one pattern of the periodic pattern in the first exposure, wherein I 0 is a largest value in one period of a light intensity distribution upon the workpiece in the first exposure, I 1 is a smallest value of the same, “a” is an intensity value at a position corresponding to the second portion, of a light intensity distribution on the workpiece in the second exposure, b is an intensity value, at positions corresponding to the paired lines, of a light intensity distribution upon the workpiece in the second exposure, c is an intensity value at a position corresponding to a region between the paired lines, Is is a light intensity, at a region other than the pattern, of the light intensity distribution on the workpiece in the second exposure, and Ic is a sensitization threshold value of a resist on the workpiece, and when the light quantity ratio between the first and second exposures is 1:k, (i) when the resist is a negative type, the mask to be used for the second exposure has its pattern defined by a light transmitting portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent largest values of the light intensity distribution in the first exposure, and additionally, relations I 0 <Ic, I 1 <Ic, k×c<Ic, k×b<Ic, and k×a>Ic as well as relations k×b+I 0 >Ic, k×c+I 1 <Ic, k×a+I 0 >Ic, k×a+I 1 >Ic and k×Is+I 0 <Ic are satisfied, and (ii) when the resist is a positive type, the mask to be used for the second exposure has its pattern defined by a light blocking portion, and the positions corresponding to the paired lines, in the light intensity distribution in the second exposure, are superposed with positions of adjacent smallest values of the light intensity distribution in the first exposure, and additionally, relations I 0 <Ic, I 1 <Ic, k×a<Ic, k×b<Ic, and k×a<Ic as well as relations k×b+I 1 <Ic, k×c+I 0 >Ic, k×a+I 0 <Ic, k×a+I 0 <Ic and k×Is+I 1 >Ic are satisfied.

Claim 115

A method according to claim 91 or 92 , wherein the first and second exposures are performed under different illumination modes.

Claim 116

A method according to claim 93 , wherein, in the first exposure, sigma is not greater than 0.3.

Claim 117

A method according to claim 93 , wherein, in the second exposure, sigma is not less than 0.6.

Claim 118

A method according to claim 93 , wherein the second exposure is performed with ring-like illumination having an illuminance distribution being lower at an inside portion than at an outside portion thereof.

Claim 119

A method according to claim 91 or 92 , wherein, in each exposure, the exposure amount is changed so that the light quantity ratio between the first and second exposures is kept at 1:k.

Claim 120

A method according to claim 97 , wherein the second exposure is performed with an exposure amount approximately twice the exposure amount in the first exposure.

Claim 121

A method according to claim 97 , wherein, when the first exposure is performed with a sigma of 0.3 and the second exposure is performed with a sigma of 0.8 or less, the exposure amount in the second exposure is made not greater than twice that of the first exposure.

Claim 122

A method according to claim 97 , wherein, when the first exposure is performed with a sigma of 0.3 and the second exposure is performed with a ring-like illumination and with a small ring width, the exposure amount in the second exposure is made not less than twice that of the first exposure.

Claim 123

A method according to claim 97 , wherein, when the first exposure is performed with a sigma of 0.3 or less, the exposure amount in the second exposure is made not less than twice that of the first exposure.

Claim 124

A method according to claim 91 or 92 , wherein, in the first exposure, a rotational position of the mask is adjusted so that patterns of the periodic pattern become parallel to a direction of a fine pattern to be printed by the second exposure.

Claim 125

An exposure apparatus for transferring a pattern onto a photosensitive substrate by use of an exposure method as recited in claim 91 or 92 .

Claim 126

A device manufacturing method, comprising the steps of: exposing a wafer to a circuit pattern in accordance with an exposure method as recited in claim 91 or 92 ; and developing the exposed wafer.