Patent US6544699B1 successfully refreshed from Google Patents.
Patent US6529623B1 successfully refreshed from Google Patents.
US6529623B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stepper lens specific reticle compensation for critical dimension control
Assignee: Advanced Micro Devices Inc
•
Filing: 1999-08-31
•
Granted: 2003-03-04
•
Expires: 2019-08-31
Abstract
Abstract In order to obviate the problem wherein localized lens aberration causes a pattern of low yield which cannot be corrected by conventional stepper correction/adjustment and which leads to the determination that the stepper lens is the source of the problem, the reticle is modified to produce an error which is selected to cancel the error that is being produced by the lens aberration and thus enable desired critical dimensions to produce on all dice. The modified reticle is then dedicated to the particular stepper.
Inventors
- 👤 Eric Kent
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:02
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70591; G03F7/706; G03F7/70425; G03F7/70433
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
198 words
A method of manufacturing semiconductor devices using a specified stepper having a predetermined lens and a predetermined reticle which is associated with the lens, the method comprising the steps of: determining the existence of a yield differential pattern during the production of semiconductor devices using the stepper; determining, through a process of elimination, that the yield differential pattern has characteristics which are consistent with operation of the stepper; effecting adjustments to the operation of the stepper designed to rectify the yield differential following the step of determining that the yield differential pattern has characteristics which are consistent with the operation of the stepper; subsequent to effecting adjustment to the operation of the stepper, establishing that the yield differential is a result of an aberration in the predetermined lens which is associated with the stepper and that errant fabrication features are generated in given localized locations are a source of low yield, and a cause of the yield differential; modifying the reticle so that the effect of the combination of the lens and the modified reticle result in the yield differential pattern being reduced; and dedicating the modified reticle for use with the predetermined lens in the predetermined stepper.
Claim 2
Independent Claim
198 words
A method of manufacturing semiconductor devices using a specified stepper having a predetermined lens and a predetermined reticle which is associated with the lens, the method comprising the steps of: determining the existence of a yield differential pattern during the production of semiconductor devices using the stepper; determining, through a process of elimination, that the yield differential pattern has characteristics which are consistent with operation of the stepper; effecting adjustments to the operation of the stepper designed to rectify the yield differential following the step of determining that the yield differential pattern has characteristics which are consistent with the operation of the stepper; subsequent to effecting adjustment to the operation of the stepper, establishing that the yield differential is a result of an aberration in the predetermined lens which is associated with the stepper and that errant fabrication features are generated in given localized locations are a source of low yield, and a cause of the yield differential; modifying the reticle so that the effect of the combination of the lens and the modified reticle result in the yield differential pattern being reduced; and dedicating the modified reticle for use with the predetermined lens in the predetermined stepper.
Claim 3
Dependent Claim
41 words
A method of manufacturing semiconductor devices as set forth in claim 1 , wherein said step of determining the existence of a yield differential pattern includes determining the cyclic recurrence of one or more errant critical dimensions in a predetermined layer.
References Cited (Backward Citations)
US4503506A
Cited
US4926489A
Cited
US5392361A
Cited
US5308991A
Cited
US5774222A
Cited
US5685588A
Cited
US5723233A
Cited
US5888675A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-03 | 2006-09-02 | 2007-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-03 | 2010-09-02 | 2011-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-03 | 2014-09-02 | 2015-03-04 | $7700.00 | Window Closed / Lapsed |