US6528413B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Fujitsu Semiconductor Ltd
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Filing: 2001-09-25
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Granted: 2003-03-04
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Expires: 2021-09-25
Abstract
Abstract A semiconductor device comprises impurity diffusion layers formed in a semiconductor substrate and containing a metal element, whose siliciding activation energy is less than 1.8 eV, at a concentration of more than 1x1011 atoms/cm2 and less than 1x1015 atoms/cm2, an insulating film formed on the semiconductor substrate, contact holes formed in the insulating film on the impurity diffusion layers, and contact plugs formed via the contact holes. Accordingly, there is provided the semiconductor device that has a connection structure between an impurity-containing semiconductor layer and a conductive film and is capable of suppressing a leakage current generated at a contact portion between the impurity diffusion layer and the conductive film.
Inventors
- 👤 Kazuo Hashimi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:13
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10B12/30; H10B12/31; H10B12/315
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
97 words
A manufacturing method of semiconductor device comprising the steps of: forming an impurity diffusion layer in a semiconductor substrate; forming a first insulating film on the semiconductor substrate and the impurity diffusion layer; forming a contact hole on the impurity diffusion layer by etching a part of the first insulating film; introducing a metal element, whose siliciding activation energy is less than 1.8 eV, into area of the impurity diffusion layer at a concentration of less than 1×10 15 atoms/cm 2 ; and forming a conductive plug connected to the impurity diffusion layer in the contact hole.
Claim 2
Dependent Claim
97 words
A manufacturing method of semiconductor device comprising the steps of: forming an impurity diffusion layer in a semiconductor substrate; forming a first insulating film on the semiconductor substrate and the impurity diffusion layer; forming a contact hole on the impurity diffusion layer by etching a part of the first insulating film; introducing a metal element, whose siliciding activation energy is less than 1.8 eV, into area of the impurity diffusion layer at a concentration of less than 1×10 15 atoms/cm 2 ; and forming a conductive plug connected to the impurity diffusion layer in the contact hole.
Claim 3
Dependent Claim
44 words
A manufacturing method of semiconductor device according to claim 1 , further comprising the steps of: forming a dielectric film of a capacitor on the conductive plug used as a storage electrode; and forming an opposing electrode of the capacitor on the dielectric film.
Claim 4
Dependent Claim
26 words
A manufacturing method of semiconductor device according to claim 1 , wherein the metal element is formed of any one of titanium, nickel, cobalt, and platinum.
Claim 5
Dependent Claim
42 words
A manufacturing method of semiconductor device according to claim 1 , wherein a step of the etching of forming the contact hole and a step of introducing the metal element into the area of the impurity diffusion layer are carried out simultaneously.
Claim 6
Dependent Claim
35 words
A manufacturing method of semiconductor device according to claim 4 , wherein the metal element is introduced into an etching atmosphere, in which the semiconductor substrate is placed in the etching, as a gaseous element.
Claim 7
Dependent Claim
48 words
A manufacturing method of semiconductor device according to claim 4 , wherein the metal element is supplied from a film that is adhered to a side wall of a chamber of an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 8
Dependent Claim
18 words
A manufacturing method of semiconductor device according to claim 6 , wherein the film is a resin film.
Claim 9
Dependent Claim
20 words
A manufacturing method of semiconductor device according to claim 6 , wherein the film is composed of the metal element.
Claim 10
Dependent Claim
41 words
A manufacturing method of semiconductor device according to claim 4 , wherein the metal element is supplied from an electrode that is arranged in an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 11
Dependent Claim
43 words
A manufacturing method of semiconductor device according to claim 4 , wherein the metal element is supplied from a ring that surrounds an electrode arranged in an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 12
Dependent Claim
35 words
A manufacturing method of semiconductor device according to any one of claim 1 , wherein the metal element is introduced into the area of the impurity diffusion layer before the impurity diffusion layer is formed.
Claim 13
Dependent Claim
35 words
A manufacturing method of semiconductor device according to claim 11 , wherein the metal element is introduced into an etching atmosphere, in which the semiconductor substrate is placed in the etching, as a gaseous element.
Claim 14
Dependent Claim
48 words
A manufacturing method of semiconductor device according to claim 11 , wherein the metal element is supplied from a film that is adhered to a side wall of a chamber of an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 15
Dependent Claim
18 words
A manufacturing method of semiconductor device according to claim 13 , wherein the film is a resin film.
Claim 16
Dependent Claim
20 words
A manufacturing method of semiconductor device according to claim 13 , wherein the film is composed of the metal element.
Claim 17
Dependent Claim
41 words
A manufacturing method of semiconductor device according to claim 11 , wherein the metal element is supplied from an electrode that is arranged in an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 18
Dependent Claim
43 words
A manufacturing method of semiconductor device according to claim 11 , wherein the metal element is supplied from a ring that surrounds an electrode arranged in an etching equipment employed in the etching, and then introduced into the areas of the semiconductor substrate.
Claim 19
Dependent Claim
93 words
A manufacturing method of semiconductor device according to claim 1 , further comprising the steps of: forming the impurity diffusion layer by introducing an impurity into both sides of gate electrodes as an element constituting a MOS transistor; and forming a second insulating film on an overall surface of the semiconductor substrate, and then etching the second insulating film to leave it on both sides of the gate electrodes as sidewall; wherein the metal element is introduced into the area of the impurity diffusion layer simultaneously with etching of the second insulating film.
Claim 20
Dependent Claim
35 words
A manufacturing method of semiconductor device according to claim 18 , wherein the metal element is introduced into an etching atmosphere, in which the semiconductor substrate is placed in the etching, as a gaseous element.
Claim 21
Dependent Claim
48 words
A manufacturing method of semiconductor device according to claim 18 , wherein the metal element is supplied from a film that is adhered to a side wall of a chamber of an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 22
Dependent Claim
18 words
A manufacturing method of semiconductor device according to claim 20 , wherein the film is a resin film.
Claim 23
Dependent Claim
20 words
A manufacturing method of semiconductor device according to claim 20 , wherein the film is composed of the metal element.
Claim 24
Dependent Claim
41 words
A manufacturing method of semiconductor device according to claim 18 , wherein the metal element is supplied from an electrode that is arranged in an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 25
Dependent Claim
43 words
A manufacturing method of semiconductor device according to claim 18 , wherein the metal element is supplied from a ring that surrounds an electrode arranged in an etching equipment employed in the etching, and then introduced into the area of the semiconductor substrate.
Claim 26
Dependent Claim
38 words
A manufacturing method of semiconductor device according to claim 1 , wherein the metal element is introduced into the area at a concentration of more than 1×10 11 atoms/cm 2 and less than 1×10 15 atoms/cm 2 .
Claim 27
Dependent Claim
25 words
A manufacturing method of semiconductor device according to claim 1 , wherein the first insulating film is formed of silicon oxide or impurity-containing silicon oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-03 | 2006-09-02 | 2007-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-03 | 2010-09-02 | 2011-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-03 | 2014-09-02 | 2015-03-04 | $7700.00 | Window Closed / Lapsed |