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US6524935B1
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Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
Assignee: GlobalFoundries US Inc
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Filing: 2000-09-29
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Granted: 2003-02-25
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Expires: 2020-09-29
Abstract
Abstract A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si 1−y Ge y layers on a semiconductor substrate, implanting hydrogen into a selected Si 1−y Ge y layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si 1−y Ge y , and strained Si 1−y Ge y depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si 1−y Ge y C.
Inventors
- 👤 Donald F. Canaperi
- 👤 Jack Oon Chu
- 👤 Christopher P. D'Emic
- 👤 Lijuan Huang
- 👤 John Albrecht Ott
- 👤 Hon-Sum Philip Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:34
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10P14/00; H10P14/20; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
287 words
A method of preparing a relaxed SiGe layer on an insulator comprising the steps of: forming a graded Si 1−x Ge x epitaxial layer on a first single crystalline semiconductor substrate, where the concentration x of Ge has a value in the range from 0.2 to 0.5 at its upper surface, forming a relaxed Si 1−y Ge y epitaxial layer over said graded Si 1−x Ge x layer, where the concentration y of Ge is equal to or about said value x, forming a hydrogen-rich defective layer in said relaxed Si 1−y Ge y layer via hydrogen bombardment, smoothing the surface of said relaxed Si 1−y Ge y epitaxial layer to provide a surface roughness in the range from about 0.3 nm to about 1 nm root mean square (RMS), selecting a second substrate having an insulator layer thereover, said insulator layer having a major surface with a surface roughness in the range from about 0.3 nm to about 1 nm RMS, bonding said top surface of said relaxed Si 1−y Ge y epitaxial layer on said first substrate to the top surface of said insulator layer on said second substrate, said step of bonding including the step of annealing, and separating said relaxed Si 1−y Ge y layer at said hydrogen-rich defective layer to form a first structure containing said first substrate, said graded Si 1−x Ge x layer and a relaxed Si 1−y Ge y layer on the upper surface and a second structure containing said second substrate and said insulator layer with a relaxed Si 1−y Ge y layer on the upper surface whereby said relaxed SiGe layer on an insulator is formed, said step of separating including a plurality of thermal treatment cycles.
Claim 2
Independent Claim
287 words
A method of preparing a relaxed SiGe layer on an insulator comprising the steps of: forming a graded Si 1−x Ge x epitaxial layer on a first single crystalline semiconductor substrate, where the concentration x of Ge has a value in the range from 0.2 to 0.5 at its upper surface, forming a relaxed Si 1−y Ge y epitaxial layer over said graded Si 1−x Ge x layer, where the concentration y of Ge is equal to or about said value x, forming a hydrogen-rich defective layer in said relaxed Si 1−y Ge y layer via hydrogen bombardment, smoothing the surface of said relaxed Si 1−y Ge y epitaxial layer to provide a surface roughness in the range from about 0.3 nm to about 1 nm root mean square (RMS), selecting a second substrate having an insulator layer thereover, said insulator layer having a major surface with a surface roughness in the range from about 0.3 nm to about 1 nm RMS, bonding said top surface of said relaxed Si 1−y Ge y epitaxial layer on said first substrate to the top surface of said insulator layer on said second substrate, said step of bonding including the step of annealing, and separating said relaxed Si 1−y Ge y layer at said hydrogen-rich defective layer to form a first structure containing said first substrate, said graded Si 1−x Ge x layer and a relaxed Si 1−y Ge y layer on the upper surface and a second structure containing said second substrate and said insulator layer with a relaxed Si 1−y Ge y layer on the upper surface whereby said relaxed SiGe layer on an insulator is formed, said step of separating including a plurality of thermal treatment cycles.
Claim 3
Dependent Claim
33 words
The method of claim 1 further including the step of smoothing the upper surface of said relaxed Si 1−y Ge y layer on said second substrate whereby additional epitaxial layers may be grown.
Claim 4
Dependent Claim
38 words
The method of claim 2 further including the step of growing an epitaxial layer of a material selected from the group consisting of Si 1−y Ge y , Si, SiC, Ge, GeC, and Si 1−y Ge y C.
Claim 5
Dependent Claim
30 words
The method of claim 3 wherein said Si 1−y Ge y material is selected with a value of y less than or greater than x to provide a strained layer.
Claim 6
Dependent Claim
41 words
The method of claim 1 wherein a low-defect Si 1−y Ge y layer is defined by a hydrogen-rich defective layer resulting from a hydrogen bombardment into thick as-grown SiGe layers with a high density of dislocations near the SiGe growth interface.
Claim 7
Dependent Claim
39 words
The method of claim 1 wherein said low-defect relaxed Si 1−y Ge y layer on said second substrate has a thickness in the range from about 30 nm to about 1000 nm as determined by the hydrogen bombardment energy.
Claim 8
Dependent Claim
43 words
The method of claim 1 wherein an encapsulation layer of a material selected from the group consisting of Si, SiO 2 , Poly Si, and Si 3 N 4 is formed on the surface of said relaxed SiGe layer of said first substrate.
Claim 9
Dependent Claim
27 words
The method of claim 7 wherein said encapsulation layer is formed and annealed at a temperature in the range from about 400° C. to about 900° C.
Claim 10
Dependent Claim
22 words
The method of claim 1 wherein said first substrate is selected from the group consisting of Si, SiGe, SiC, GaAs, or InP.
Claim 11
Dependent Claim
48 words
The method of claim 1 wherein said step of smoothing further includes the step of Chemo Mechanical Polishing (CMP) to smooth said surface of said relaxed Si 1−y Ge y layer to provide a surface roughness in the range from about 0.3 nm to about 1 nm RMS.
Claim 12
Dependent Claim
28 words
The method of claim 1 wherein after said step of forming a relaxed Si 1−y Ge y epitaxial layer further includes the step of forming an encapsulation layer.
Claim 13
Dependent Claim
45 words
The method of claim 11 wherein said said step of smoothing further includes the step of Chemo Mechanical Polishing (CMP) to smooth the surface of said encapsulation layer to provide a surface roughness in the range from about 0.3 nm to about 1 nm RMS.
Claim 14
Dependent Claim
15 words
The method of claim 1 wherein said insulator layer is formed on said second substrate.
Claim 15
Dependent Claim
51 words
The method of claim 13 wherein said insulator layer includes a material selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , LiNbO 3 , low-k materials where k is less than 3.2, or the combination of two or more said materials.
Claim 16
Dependent Claim
28 words
The method of claim 13 wherein said insulator layer is formed by a process selected from the group consisting of PECVD, LPCVD, UHVCVD, thermal oxidation and spin-on techniques.
Claim 17
Dependent Claim
25 words
The method of claim 13 wherein said insulator layer is formed at a temperature in the range from about 400° C. to about 900° C.
Claim 18
Dependent Claim
29 words
The method of claim 1 wherein said second substrate is selected from the group consisting of Si, SiGe, SiC, GaAs, InP, sapphire, glass, quartz, LiNbO 3 , and PLZT.
Claim 19
Dependent Claim
40 words
The method of claim 1 wherein said smoothed top surface of said first Si 1−y Ge y relaxed layer on said first substrate is brought into intimate contact with said top surface of an insulator layer on said second substrate.
Claim 20
Dependent Claim
30 words
The method of claim 18 wherein an intermediate agent layer selected from the group consisting of Ge, Al, W, Co, and Ti may be used to enhance the bonding interface.
Claim 21
Dependent Claim
72 words
The method of claim 1 wherein a low-defect first portion of said relaxed Si 1−y Ge y layer is separated during said thermal treatment cycles from said first substrate said graded Si 1−x Ge x layer and a second portion of said relaxed Si 1−y Ge y layer, leaving said second portion of said relaxed Si 1−y Ge y layer over said graded Si 1−x Ge x layer on said first substrate.
Claim 22
Dependent Claim
55 words
The method of claim 1 wherein said thermal treatment cycles form a strong bond at said bonded interface and at the same time induce separation at said H-rich defective layer of said relaxed Si 1−y Ge y layer by an annealing step selected from the group consisting of furnace anneal and rapid thermal anneal (RTA).
Claim 23
Dependent Claim
25 words
The method of claim 21 wherein said anneal ambient during said annealing step is selected from the group consisting of air, N 2 and Ar.
Claim 24
Dependent Claim
29 words
The method of claim 21 wherein said step of annealing includes the step of heating to a temperature in the range from about 100° C. to about 800° C.
Claim 25
Dependent Claim
38 words
The method of claim 1 wherein after said step of separating further including the step of smoothing by Chemo-Mechanical Polishing (CMP) the top surface of said relaxed Si 1−y Ge y layer on insulator on said second substrate.
Claim 26
Dependent Claim
41 words
The method of claim 24 wherein said step of Chemo-Mechanical Polishing (CMP) includes polishing said top surface of said smoothed relaxed Si 1−y Ge y layer to provide a smoothness in the range from about 0.3 nm to about 1 nm.
Claim 27
Dependent Claim
30 words
The method of claim 24 wherein a relaxed Si 1−y Ge y layer may be epitaxially grown on said top surface of said smoothed relaxed Si 1−y Ge y layer.
Claim 28
Dependent Claim
34 words
The method of claim 26 wherein said step of epitaxially growing said relaxed Si 1−y Ge y layer includes growing to a thickness in the range from about 30 nm to about 500 nm.
Claim 29
Dependent Claim
27 words
The method of claim 24 further including the step of growing one of strained Si or strained SiGe on said smoothed relaxed Si 1−y Ge y layer.
Claim 30
Dependent Claim
27 words
The method of claim 26 further including the step of growing one of strained Si or strained SiGe on said smoothed relaxed Si 1−y Ge y layer.
Claim 31
Dependent Claim
37 words
The method of claim 1 wherein said relaxed Si 1−y Ge y layer on said first substrate is smoothed by the step of CMP followed by the step of growing a relaxed Si 1−y Ge y layer.
Claim 32
Dependent Claim
50 words
The method of claim 30 wherein said first substrate with graded Si 1−x Ge x and relaxed Si 1−y Ge y layers include the step of hydrogen bombardment whereby the the steps of smoothing, selecting, bonding, and separating may be repeated for preparing an additional SiGe layer on an insulator.
References Cited (Backward Citations)
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