Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
214 words
A method for manufacturing a small contact for a Chalcogenide memory device, said method comprising: forming a via within a first oxide layer on a substrate; depositing a conductive layer on top of said first oxide layer; depositing a second oxide layer on said conductive layer; removing said second oxide layer and said conductive layer such that the remaining portion of conductive layer within said contact is flush with a surface of said first oxide layer; depositing a third oxide layer on said conductive layer, and said first and second oxide layers; removing a portion of said third oxide layer to leave an edge of said third oxide layer essentially perpendicular to said conductive layer; depositing a nitride layer on said third oxide layer, said conductive layer, and said first and second oxide layers, wherein said nitride layer conforms with said third oxide layer; removing said nitride layer to form a spacer at an edge of said third oxide layer; removing said third oxide layer to expose said spacer; etching said conductive layer such that a portion of said conductive layer underneath said spacer is exposed, wherein said portion of said conductive layer underneath said spacer resembles a matchstick; and removing said spacer to expose said matchstick-like conductive layer portion as a small contact.
Claim 2
Independent Claim
214 words
A method for manufacturing a small contact for a Chalcogenide memory device, said method comprising: forming a via within a first oxide layer on a substrate; depositing a conductive layer on top of said first oxide layer; depositing a second oxide layer on said conductive layer; removing said second oxide layer and said conductive layer such that the remaining portion of conductive layer within said contact is flush with a surface of said first oxide layer; depositing a third oxide layer on said conductive layer, and said first and second oxide layers; removing a portion of said third oxide layer to leave an edge of said third oxide layer essentially perpendicular to said conductive layer; depositing a nitride layer on said third oxide layer, said conductive layer, and said first and second oxide layers, wherein said nitride layer conforms with said third oxide layer; removing said nitride layer to form a spacer at an edge of said third oxide layer; removing said third oxide layer to expose said spacer; etching said conductive layer such that a portion of said conductive layer underneath said spacer is exposed, wherein said portion of said conductive layer underneath said spacer resembles a matchstick; and removing said spacer to expose said matchstick-like conductive layer portion as a small contact.
Claim 3
Dependent Claim
15 words
The method according to claim 1 , wherein said conductive layer is a metal layer.
Claim 4
Dependent Claim
15 words
The method according to claim 1 , wherein said conductive layer is a polysilicon layer.
Claim 5
Dependent Claim
16 words
The method according to claim 1 , wherein said conductive layer is approximately 300 Å thick.
Claim 6
Dependent Claim
17 words
The method according to claim 1 , wherein said third oxide layer is approximately 50-100 nm thick.
Claim 7
Dependent Claim
16 words
The method according to claim 1 , wherein said nitride layer is approximately 20-30 nm thick.
Claim 8
Dependent Claim
31 words
The method according to claim 1 , wherein said etching includes etching said conductive layer back 50-100 nm such that a portion of said conductive layer underneath said spacer is exposed.
Claim 9
Dependent Claim
33 words
The method according to claim 1 , wherein a width of said portion of said conductive layer is 30 nm and a length of said portion of said conductive layer is 20 nm.
Claim 10
Dependent Claim
39 words
The method according to claim 1 , wherein said method further include: depositing an oxide layer conformably over said match-stick conductive layer portion; and polishing said oxide layer to expose said matchstick-like conductive layer portion as said small contact.
Claim 11
Dependent Claim
15 words
The method according to claim 9 , wherein said oxide layer is silicon oxide layer.
Claim 12
Dependent Claim
16 words
The method according to claim 9 , wherein said oxide layer is approximately 200-250 nm thick.