US6503561B1
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US
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Liquid precursor mixtures for deposition of multicomponent metal containing materials
Assignee: Versum Materials US LLC
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Filing: 2000-04-10
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Granted: 2003-01-07
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Expires: 2020-04-10
Abstract
Abstract The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.
Inventors
- 👤 Yoshihide Senzaki
- 👤 David Allen Roberts
- 👤 John Anthony Thomas Norman
- 👤 Arthur Kenneth Hochberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C18/00; C23C18/02; C23C18/12; C23C18/1225; C23C16/22; C23C16/30; C23C16/34; C23C16/40; C23C16/401; C23C16/405; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/125; C23C18/1254; C23C18/1258
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
151 words
A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs; b) delivering said solventless mixture by direct liquid injection to a flash vaporization zone to vaporize said solventless mixture; c) contacting said substrate under deposition conditions with a resulting vapor of said solventless mixture, and d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of oxygen prior to depositing said multiple metal compound layer on said substrate.
Claim 2
Dependent Claim
151 words
A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs; b) delivering said solventless mixture by direct liquid injection to a flash vaporization zone to vaporize said solventless mixture; c) contacting said substrate under deposition conditions with a resulting vapor of said solventless mixture, and d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of oxygen prior to depositing said multiple metal compound layer on said substrate.
Claim 3
Dependent Claim
25 words
The process of claim 1 wherein said ambient conditions are less than or equal to 200° C. and less than or equal to 30 psig.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein said ambient conditions are 20-30° C. and less than or equal to 5-6 psig.
Claim 5
Dependent Claim
32 words
The process of claim 1 wherein said source of oxygen is selected from the group consisting of oxygen, ozone, nitrous oxide, nitric oxide, nitrogen dioxide, water, hydrogen peroxide, air and mixtures thereof.
Claim 6
Dependent Claim
68 words
The process of claim 1 wherein said multiple metal or metal compound layer is selected from the group consisting of mixed metal alloys, mixed metal oxides, mixed metal nitrides, mixed metal carbides, mixed metal carbonitrides, mixed metal oxycarbonitrides, mixed metal oxycarbides, mixed metal oxynitrides, mixed metal borides, mixed metal sulfides, mixed metal phosphides, mixed metal arsenides, mixed metal antimonides, mixed metal selenides, mixed metal tellurides and mixtures thereof.
Claim 7
Dependent Claim
16 words
The process of claim 1 wherein said deposition conditions are elevated temperature of approximately 150-600° C.
Claim 8
Dependent Claim
17 words
The process of claim 6 wherein said appropriate reaction conditions of elevated temperature are approximately 200-500° C.
Claim 9
Dependent Claim
26 words
The process of claim 1 wherein said solventless liquid mixture is introduced into said flash vaporization zone and vaporized at a temperature of approximately 50-200° C.
Claim 10
Dependent Claim
12 words
The process of claim 8 wherein said temperature is approximately 80-120° C.
Claim 11
Dependent Claim
19 words
The process of claim 1 wherein said deposition conditions have a flash vaporization zone pressure of approximately 0.01-50 Torr.
Claim 12
Dependent Claim
12 words
The process of claim 10 wherein said pressure is approximately 0.1-5 Torr.
Claim 13
Dependent Claim
151 words
A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs; b) delivering said solventless mixture by direct liquid injection to a flash vaporization zone to vaporize said solventless mixture; c) contacting said substrate under deposition conditions with a resulting vapor of said solventless mixture, and d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of nitrogen prior to depositing said multiple metal compound layer on said substrate.
Claim 14
Dependent Claim
151 words
A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs; b) delivering said solventless mixture by direct liquid injection to a flash vaporization zone to vaporize said solventless mixture; c) contacting said substrate under deposition conditions with a resulting vapor of said solventless mixture, and d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of nitrogen prior to depositing said multiple metal compound layer on said substrate.
Claim 15
Dependent Claim
27 words
The process of claim 12 wherein said source of nitrogen is selected from the group consisting of nitrogen, ammonia, hydrazine, alkylhydrazine, hydrogen azide, alkylamine and mixtures thereof.
Claim 16
Dependent Claim
25 words
The process of claim 12 wherein said ambient conditions are less than or equal to 200° C. and less than or equal to 30 psig.
Claim 17
Dependent Claim
20 words
The process of claim 12 wherein said ambient conditions are 20-30° C. and less than or equal to 5-6 psig.
Claim 18
Dependent Claim
68 words
The process of claim 12 wherein said multiple metal or metal compound layer is selected from the group consisting of mixed metal alloys, mixed metal oxides, mixed metal nitrides, mixed metal carbides, mixed metal carbonitrides, mixed metal oxycarbonitrides, mixed metal oxycarbides, mixed metal oxynitrides, mixed metal borides, mixed metal sulfides, mixed metal phosphides, mixed metal arsenides, mixed metal antimonides, mixed metal selenides, mixed metal tellurides and mixtures thereof.
Claim 19
Dependent Claim
16 words
The process of claim 12 wherein said deposition conditions are elevated temperature of approximately 150-600° C.
Claim 20
Dependent Claim
16 words
The process of claim 17 wherein said deposition conditions are elevated temperature of approximately 200-500° C.
Claim 21
Dependent Claim
26 words
The process of claim 12 wherein said solventless liquid mixture is introduced into said flash vaporization zone and vaporized at a temperature of approximately 50-200° C.
Claim 22
Dependent Claim
12 words
The process of claim 19 wherein said temperature is approximately 80-120° C.
Claim 23
Dependent Claim
19 words
The process of claim 12 wherein said deposition conditions have a flash vaporization zone pressure of approximately 0.01-50 Torr.
Claim 24
Dependent Claim
12 words
The process of claim 21 wherein said pressure is approximately 0.1-5 Torr.
Claim 25
Dependent Claim
186 words
A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs; b) delivering said solventless mixture to a deposition zone where said substrate is located; c) contacting said substrate under deposition conditions with said solventless mixture, where said contacting said substrate under deposition conditions is selected from the group consisting of chemical vapor deposition, spray pyrolysis, sol-gel processing, spin coating, atomic layer deposition and jet vapor deposition; and, d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of oxygen and a source of nitrogen prior to depositing said multiple metal compound layer on said substrate to form a multiple metal oxynitride compound layer.
Claim 26
Dependent Claim
186 words
A process for deposition of a multiple metal or multiple metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein all said ligands of said solventless mixture are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and/or nitrogen substituted analogs; b) delivering said solventless mixture to a deposition zone where said substrate is located; c) contacting said substrate under deposition conditions with said solventless mixture, where said contacting said substrate under deposition conditions is selected from the group consisting of chemical vapor deposition, spray pyrolysis, sol-gel processing, spin coating, atomic layer deposition and jet vapor deposition; and, d) depositing a multiple metal or metal compound layer on said substrate from said solventless mixture, wherein said solventless mixture is mixed with a source of oxygen and a source of nitrogen prior to depositing said multiple metal compound layer on said substrate to form a multiple metal oxynitride compound layer.
References Cited (Backward Citations)
US4058430A
Cited
US5204314A
Cited
US5820664A
Cited
WO1998046617A1
Cited
US6015917A
Cited
US6238734B1
Cited
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