Patent US6573199B2 successfully refreshed from Google Patents.
Patent US6495459B2 successfully refreshed from Google Patents.
US6495459B2
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Solutions of metal-comprising materials, methods of forming metal-comprising layers, methods of storing metal-comprising materials, and methods of forming capacitors
Assignee: Mosaid Technologies Inc
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Filing: 2001-10-24
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Granted: 2002-12-17
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Expires: 2021-10-24
Abstract
Abstract In one aspect, the invention encompasses a semiconductor processing method of forming a metal-comprising layer over a substrate. A substrate is provided within a reaction chamber, and a source of a metal-comprising precursor is provided external to the reaction chamber. The metal-comprising precursor comprises a metal coordinated with at least one Lewis base to form a complex having a stoichiometric ratio of the at least one Lewis base to the metal. An amount of the at least one Lewis base is distributed within the source to an amount that is in excess of the stoichiometric ratio. At least some of the metal-comprising precursor is transported from the source to the reaction chamber. A metal is deposited from the metal-comprising precursor and onto the substrate within the reaction chamber. In another aspect, the invention encompasses a method of storing a metal-comprising material. A metal-comprising material is dispersed within a solution. The metal-comprising material comprises a complex having the stoichiometric form (Y)xM(Q)z; wherein M is a metal, Y is a first ligand, x is from 0 to 4, Q is a Lewis base, and z is from 1 to 6. An amount of Q is dispersed within the solution to an excess over the stoichiometric ratio of Q to M in the complex.
Inventors
- 👤 Stefan Uhlenbrock
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/409; F; F17; F17C; F17C11/00; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; F17C2270/00; F17C2270/05; F17C2270/0518; H10D1/692; H10D1/696
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
120 words
A semiconductor processing method of forming a metal-comprising layer over a substrate, comprising: providing a semiconductor substrate within a reaction chamber; providing a source of a metal-comprising precursor in fluid communication with the reaction chamber, the metal-comprising precursor having a metal coordinated with one or more Lewis bases to form a complex having an undissociated stoichiometric ratio of the one or more Lewis bases to the metal; providing at least one of the one or more Lewis bases within the source to a concentration in excess of the stoichiometric ratio; transporting at least some of the metal-comprising precursor from the source to the reaction chamber; and depositing metal from the metal-comprising precursor onto the semiconductor substrate within the reaction chamber.
Claim 2
Dependent Claim
120 words
A semiconductor processing method of forming a metal-comprising layer over a substrate, comprising: providing a semiconductor substrate within a reaction chamber; providing a source of a metal-comprising precursor in fluid communication with the reaction chamber, the metal-comprising precursor having a metal coordinated with one or more Lewis bases to form a complex having an undissociated stoichiometric ratio of the one or more Lewis bases to the metal; providing at least one of the one or more Lewis bases within the source to a concentration in excess of the stoichiometric ratio; transporting at least some of the metal-comprising precursor from the source to the reaction chamber; and depositing metal from the metal-comprising precursor onto the semiconductor substrate within the reaction chamber.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein at least some of metal-comprising precursor in the source is a liquid.
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein at least one of the one or more the Lewis bases is CO.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein at least one of the one or more Lewis bases comprise nitrogen.
Claim 6
Dependent Claim
48 words
The method of claim 1 wherein the metal-comprising precursor comprises the complex (Y) x M(Q) z ; M being the metal; Y being a first ligand, and x being from 0 to 4; Q being the one or more Lewis bases, and z being from 1 to 6.
Claim 7
Dependent Claim
19 words
The method of claim 5 wherein Q is selected from the group consisting of CO and NH 3 .
Claim 8
Dependent Claim
11 words
The method of claim 5 wherein Y is a multidentate chelate.
Claim 9
Dependent Claim
10 words
The method of claim 5 wherein Y is a diene.
Claim 10
Dependent Claim
68 words
The method of claim 1 wherein the metal-comprising precursor comprises the complex (Y) x M(CO) z , wherein M is the metal, wherein Y is a multidentate chelate, wherein x is from 0 to 4, wherein z is from 1 to 6, and wherein CO is the Lewis base provided within the source to an amount in excess of the stoichiometric ratio of the CO in the complex.
Claim 11
Dependent Claim
38 words
The method of claim 1 wherein the metal-comprising precursor comprises the complex (cyclopentadienyl)Rh(CO) 2 , and wherein CO is provided within the source to an amount in excess of the stoichiometric ratio of the CO in the complex.
Claim 12
Dependent Claim
38 words
The method of claim 1 wherein the metal-comprising precursor comprises the complex (1,3-cyclohexadiene)Ru(CO) 3 , and wherein CO is provided within the source to an amount in excess of the stoichiometric ratio of the CO in the complex.
Claim 13
Dependent Claim
12 words
The method of claim 1 wherein the metal is a transition metal.
Claim 14
Dependent Claim
21 words
The method of claim 1 wherein the metal is selected from the group consisting of Ru, Os, Rh, Ir and Co.
Claim 15
Dependent Claim
152 words
A semiconductor processing method of forming a metal-comprising layer over a semiconductor substrate, comprising: providing a semiconductor substrate within a reaction chamber; providing a source of a metal-comprising precursor external to the reaction chamber, the metal-comprising precursor comprising a metal coordinated with one or more Lewis bases to form a complex having a stoichiometric ratio of each of the Lewis bases to the metal, at least some of the metal-comprising precursor in the source being a liquid; providing a gas having an amount of at least one of the Lewis bases therein; passing the gas through the liquid metal-comprising precursor of the source while maintaining the source at a temperature of from about 0° C. to about 100° C.; transporting at least some of the metal-comprising precursor from the source to the reaction chamber with the gas; and depositing metal from the metal-comprising precursor onto the semiconductor substrate within the reaction chamber.
Claim 16
Dependent Claim
152 words
A semiconductor processing method of forming a metal-comprising layer over a semiconductor substrate, comprising: providing a semiconductor substrate within a reaction chamber; providing a source of a metal-comprising precursor external to the reaction chamber, the metal-comprising precursor comprising a metal coordinated with one or more Lewis bases to form a complex having a stoichiometric ratio of each of the Lewis bases to the metal, at least some of the metal-comprising precursor in the source being a liquid; providing a gas having an amount of at least one of the Lewis bases therein; passing the gas through the liquid metal-comprising precursor of the source while maintaining the source at a temperature of from about 0° C. to about 100° C.; transporting at least some of the metal-comprising precursor from the source to the reaction chamber with the gas; and depositing metal from the metal-comprising precursor onto the semiconductor substrate within the reaction chamber.
Claim 17
Dependent Claim
14 words
The method of claim 14 wherein the at least one Lewis base is CO.
Claim 18
Dependent Claim
14 words
The method of claim 14 wherein the at least one Lewis base comprises nitrogen.
Claim 19
Dependent Claim
63 words
The method of claim 14 wherein the metal-comprising precursor comprises at least two Lewis bases, wherein the at least two Lewis bases have different chemical formulas from one another, and wherein only one of the at least two Lewis bases is distributed within the source to an amount in excess of the stoichiometric ratio of said only one Lewis base in the complex.
Claim 20
Dependent Claim
44 words
The method of claim 14 wherein the metal-comprising precursor comprises the complex (Y) x M(Q) z ; Y being a first ligand, and x being from 0 to 4; Q being the at least one Lewis base, and z being from 1 to 6.
Claim 21
Dependent Claim
19 words
The method of claim 18 wherein Q is selected from the group consisting of CO and NH 3 .
Claim 22
Dependent Claim
14 words
The method of claim 18 wherein Y is a multidentate chelate comprising a diene.
Claim 23
Dependent Claim
38 words
The method of claim 14 wherein the metal-comprising precursor comprises the complex (cyclopentadienyl)Rh(CO) 2 , and wherein CO is distributed within the source to an amount in excess of the stoichiometric ratio of the CO in the complex.
Claim 24
Dependent Claim
44 words
The method of claim 14 wherein the metal-comprising precursor comprises the complex (1,3-cyclohexadiene)Ru(CO) 3 , and wherein CO is the at least one Lewis base distributed within the source to an amount in excess of the stoichiometric ratio of the CO in the complex.
Claim 25
Dependent Claim
23 words
The method of claim 14 wherein the at least one Lewis base comprises a double bond that joins a pair of carbon atoms.
Claim 26
Dependent Claim
12 words
The method of claim 14 wherein the metal is a transition metal.
Claim 27
Dependent Claim
21 words
The method of claim 14 wherein the metal is selected from the group consisting of Ru, Os, Rh, Ir and Co.
Claim 28
Independent Claim
162 words
A method of forming a capacitor, comprising: forming a conductive diffusion barrier layer over a semiconductor substrate, the forming the diffusion barrier layer comprising: providing the substrate within a reaction chamber; providing a source of a metal-comprising precursor external to the reaction chamber, the metal-comprising precursor comprising a metal coordinated with one or more Lewis bases to form a complex having a stoichiometric ratio of each of the Lewis bases to the metal; providing a gas, and distributing an amount of at least one of the Lewis bases within the gas; after distributing the at least one of the Lewis bases within the gas, transporting at least some of the metal-comprising precursor from the source to the reaction chamber with the gas; and depositing metal from the metal-comprising precursor onto the semiconductor substrate within the reaction chamber; forming a dielectric layer against the diffusion barrier layer; and forming a second capacitor electrode separated from the diffusion barrier layer by the dielectric layer.
Claim 29
Independent Claim
162 words
A method of forming a capacitor, comprising: forming a conductive diffusion barrier layer over a semiconductor substrate, the forming the diffusion barrier layer comprising: providing the substrate within a reaction chamber; providing a source of a metal-comprising precursor external to the reaction chamber, the metal-comprising precursor comprising a metal coordinated with one or more Lewis bases to form a complex having a stoichiometric ratio of each of the Lewis bases to the metal; providing a gas, and distributing an amount of at least one of the Lewis bases within the gas; after distributing the at least one of the Lewis bases within the gas, transporting at least some of the metal-comprising precursor from the source to the reaction chamber with the gas; and depositing metal from the metal-comprising precursor onto the semiconductor substrate within the reaction chamber; forming a dielectric layer against the diffusion barrier layer; and forming a second capacitor electrode separated from the diffusion barrier layer by the dielectric layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-12-16 | 2006-06-17 | 2006-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-16 | 2010-06-17 | 2010-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-12-16 | 2014-06-17 | 2014-12-17 | $7700.00 | Window Closed / Lapsed |