US6485891B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Exposure apparatus and method
Assignee: Hitachi Ltd
•
Filing: 2000-04-03
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Granted: 2002-11-26
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Expires: 2020-04-03
Abstract
Abstract A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.
Inventors
- 👤 Minori Noguchi
- 👤 Yukio Kenbo
- 👤 Yoshitada Oshida
- 👤 Masataka Shiba
- 👤 Yasuhiro Yoshitaka
- 👤 Makoto Murayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:30
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70491; G03F7/705; G03F7/20; G03F7/2002; G03F7/70058; G03F7/70091; G03F7/701; G03F7/70125; G03F7/70216; G03F7/70308; G03F7/70591; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
107 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask in accordance with the pattern of the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
Claim 2
Dependent Claim
107 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask in accordance with the pattern of the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
Claim 3
Dependent Claim
21 words
A production method of a semiconductor device according to the claim 1 , wherein the light source uses a KrF gas.
Claim 4
Dependent Claim
28 words
A production method of a semiconductor device according to claim 1 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
Claim 5
Dependent Claim
126 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; illuminating a mask having a phase shifter with the excimer laser emitted from the light source and passed through a filter so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask in accordance with a pattern of the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so as to have a line width at a portion thereof which is less than 0.2 μm.
Claim 6
Dependent Claim
126 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; illuminating a mask having a phase shifter with the excimer laser emitted from the light source and passed through a filter so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask in accordance with a pattern of the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so as to have a line width at a portion thereof which is less than 0.2 μm.
Claim 7
Dependent Claim
21 words
A production method of a semiconductor device according to the claim 4 , wherein the light source uses a KrF gas.
Claim 8
Dependent Claim
28 words
A production method of a semiconductor device according to claim 4 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
Claim 9
Dependent Claim
111 words
A production method of a semiconductor device, comprising the steps of: exposing a resist on a substrate of the semiconductor device with an excimer laser emitted from a light source using a KrF gas and passed through a filter and a mask so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; and forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so that a line width of the pattern formed on the substrate of the semiconductor device is less than 0.2 μm at a portion thereof.
Claim 10
Dependent Claim
111 words
A production method of a semiconductor device, comprising the steps of: exposing a resist on a substrate of the semiconductor device with an excimer laser emitted from a light source using a KrF gas and passed through a filter and a mask so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; and forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so that a line width of the pattern formed on the substrate of the semiconductor device is less than 0.2 μm at a portion thereof.
Claim 11
Dependent Claim
28 words
A production method of a semiconductor device according to claim 7 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
Claim 12
Dependent Claim
94 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; forming the excimer laser as a ring-like shape divided in time into plural numbers; illuminating a pattern on a mask with the ring-like shape excimer laser; exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask in accordance with the pattern on the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
Claim 13
Dependent Claim
94 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; forming the excimer laser as a ring-like shape divided in time into plural numbers; illuminating a pattern on a mask with the ring-like shape excimer laser; exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask in accordance with the pattern on the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
Claim 14
Dependent Claim
28 words
A production method of a semiconductor device according to claim 9 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
Claim 15
Dependent Claim
92 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; shaping the excimer laser in a ring-like shape divided in time into plural numbers by scanning the excimer laser; illuminating a pattern on a mask with the ring-like shaped excimer laser; exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask; and forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
Claim 16
Dependent Claim
92 words
A production method of a semiconductor device, comprising the steps of: emitting an excimer laser from a light source; shaping the excimer laser in a ring-like shape divided in time into plural numbers by scanning the excimer laser; illuminating a pattern on a mask with the ring-like shaped excimer laser; exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask; and forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
Claim 17
Dependent Claim
85 words
A production method of a semiconductor device, comprising the steps of: illuminating a pattern on a mask with a ring-like shaped excimer laser divided in time into plural numbers; exposing a resist on a substr ate of the semiconductor device with the excimer laser passed through the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so that a line width at a portion thereof is less than 0.2 μm.
Claim 18
Dependent Claim
85 words
A production method of a semiconductor device, comprising the steps of: illuminating a pattern on a mask with a ring-like shaped excimer laser divided in time into plural numbers; exposing a resist on a substr ate of the semiconductor device with the excimer laser passed through the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so that a line width at a portion thereof is less than 0.2 μm.
Claim 19
Dependent Claim
17 words
A production method according to the claim 12 , wherein the excimer laser uses a KrF gas.
Claim 20
Dependent Claim
28 words
A production method of a semiconductor device according to claim 12 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
Claim 21
Dependent Claim
92 words
A production method of a semiconductor device, comprising the steps of: exposing a resist on a substrate of the semiconductor device using an excimer stepper having an excimer laser light source and a filter forming an excimer laser emitted from the excimer laser light source so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; and forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist on the substrate exposed by the excimer stepper.
Claim 22
Dependent Claim
92 words
A production method of a semiconductor device, comprising the steps of: exposing a resist on a substrate of the semiconductor device using an excimer stepper having an excimer laser light source and a filter forming an excimer laser emitted from the excimer laser light source so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots; and forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist on the substrate exposed by the excimer stepper.
Claim 23
Dependent Claim
33 words
A production method according to the claim 15 , wherein a line width of the pattern formed on the substrate of the semiconductor device at a portion thereof is less than 0.2 μm.
Claim 24
Dependent Claim
28 words
A production method of a semiconductor device according to claim 15 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
Claim 25
Dependent Claim
105 words
A production method of a semiconductor device, comprising the steps of: illuminating a pattern on a mask with an exposure light having a ring-like shape divided in time into plural numbers by a plurality of dots; exposing a resist on a substrate of the semiconductor device with the exposure light passed through the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the exposure light; and controlling the exposure light which exposes the resist is so as to provide a balance between a O-order diffraction light and a diffraction light from the mask.
Claim 26
Dependent Claim
105 words
A production method of a semiconductor device, comprising the steps of: illuminating a pattern on a mask with an exposure light having a ring-like shape divided in time into plural numbers by a plurality of dots; exposing a resist on a substrate of the semiconductor device with the exposure light passed through the mask; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the exposure light; and controlling the exposure light which exposes the resist is so as to provide a balance between a O-order diffraction light and a diffraction light from the mask.
Claim 27
Dependent Claim
34 words
A production method of a semiconductor device according to the claim 18 , wherein the O-order diffraction light of the exposure light is reduced by a filter placed between the mask and the substrate.
Claim 28
Dependent Claim
28 words
A production method of a semiconductor device according to claim 18 , wherein the exposure light having the ring-like shape divided in time into plural numbers is scanned.
Claim 29
Dependent Claim
116 words
A production method of a semiconductor device, comprising the steps of: exposing a resist on a substrate of the semiconductor substrate using an excimer stepper having an excimer laser light source and a filter; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist on the substrate exposed by the excimer stepper; wherein the resist is exposed with the excimer laser having a ring-like shape divided in time into plural numbers by a plurality of dots which passed through the filter and a mask, and, in the excimer laser exposure of the resist, a light intensity between O-order diffraction light and diffraction light from the mask is balanced.
Claim 30
Dependent Claim
116 words
A production method of a semiconductor device, comprising the steps of: exposing a resist on a substrate of the semiconductor substrate using an excimer stepper having an excimer laser light source and a filter; forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist on the substrate exposed by the excimer stepper; wherein the resist is exposed with the excimer laser having a ring-like shape divided in time into plural numbers by a plurality of dots which passed through the filter and a mask, and, in the excimer laser exposure of the resist, a light intensity between O-order diffraction light and diffraction light from the mask is balanced.
Claim 31
Dependent Claim
36 words
A production method of a semiconductor device according to the claim 21 , wherein the O-order diffraction light of the exposure light is reduced by the filter which is placed between the mask and the substrate.
Claim 32
Dependent Claim
28 words
A production method of a semiconductor device according to claim 21 , wherein the excimer laser having the ring-like shape divided in time into plural numbers is scanned.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-11-25 | 2006-05-27 | 2006-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-25 | 2010-05-27 | 2010-11-26 | $3760.00 | Window Closed / Lapsed |
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