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US6477105B2
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Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver
Assignee: Mitsubishi Electric Corp
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Filing: 2002-03-25
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Granted: 2002-11-05
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Expires: 2022-03-25
Abstract
Abstract Complementary sub-decode signals to be provided to a sub-word line driver are separately generated through different circuits using individual power-supply voltages. Thus, the generation of a through current in the sub-word line driver is prevented.
Inventors
- 👤 Kengo Aritomi
- 👤 Mikio Asakura
- 👤 Takashi Ito
- 👤 Kiyohiro Furutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:43
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/12; G11C8/10; G11C8/14
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
227 words
A semiconductor memory device, comprising: a plurality of memory cells arranged in rows and columns; and a plurality of sub-word lines provided corresponding to the rows of memory cells and having the memory cells of corresponding rows connected thereto, said plurality of sub-word lines divided into a plurality of blocks along a row direction and divided into groups by a prescribed number along a column direction; a plurality of main word lines provided in common to said plurality of blocks, extending in the row direction and corresponding to the respective groups of the sub-word lines; a main word line selecting circuit for driving an addressed main word line to a selected state according to a first address bit of a multi-bit address signal; a sub-decode circuit for generating complementary decode fast signals for designating a sub-word line within each group of said sub-word lines according to the multi-bit address signal excluding said first address bit; a sub-word line selecting circuit for generating complementary sub-word line select signals individually according to respective complementary decode fast signals from said sub-decode circuit, said complementary sub-word line select signals formed via separate paths; and a plurality of sub-word line drive circuits provided corresponding to the sub-word lines for driving corresponding sub-word lines to a selected state according to signals on corresponding main word lines and said complementary sub-word line select signals.
Claim 2
Dependent Claim
227 words
A semiconductor memory device, comprising: a plurality of memory cells arranged in rows and columns; and a plurality of sub-word lines provided corresponding to the rows of memory cells and having the memory cells of corresponding rows connected thereto, said plurality of sub-word lines divided into a plurality of blocks along a row direction and divided into groups by a prescribed number along a column direction; a plurality of main word lines provided in common to said plurality of blocks, extending in the row direction and corresponding to the respective groups of the sub-word lines; a main word line selecting circuit for driving an addressed main word line to a selected state according to a first address bit of a multi-bit address signal; a sub-decode circuit for generating complementary decode fast signals for designating a sub-word line within each group of said sub-word lines according to the multi-bit address signal excluding said first address bit; a sub-word line selecting circuit for generating complementary sub-word line select signals individually according to respective complementary decode fast signals from said sub-decode circuit, said complementary sub-word line select signals formed via separate paths; and a plurality of sub-word line drive circuits provided corresponding to the sub-word lines for driving corresponding sub-word lines to a selected state according to signals on corresponding main word lines and said complementary sub-word line select signals.
Claim 3
Dependent Claim
93 words
The semiconductor memory device according to claim 1 , wherein said main word line selecting circuit drives said addressed main word line to a first power-supply voltage level, and holds a main word line in a non-selected state at a second power-supply voltage level, and said complementary decode fast signals include a first decode fast signal having an amplitude of said second power-supply voltage level and a second decode fast signal having an amplitude of a third voltage level that is between said first power-supply voltage level and said second power-supply voltage level.
Claim 4
Dependent Claim
77 words
The semiconductor memory device according to claim 2 , wherein said sub-word line selecting circuit includes a circuit receiving said second power-supply voltage as one operating power-supply voltage and for generating a first sub-word line select signal according to said first decode fast signal, and a circuit receiving a voltage not less than said third voltage as one operating power-supply voltage and for generating a second sub-word line select signal according to said second decode fast signal.
Claim 5
Dependent Claim
112 words
The semiconductor memory device according to claim 1 , wherein said sub-decode circuit includes a circuit for generating a pair of decode signals complementary to one another for each of a prescribed number of sub-word line drive circuits in each group of said plurality of sub-word lines and for outputting said pair of decode signals as the decode fast signals, and said sub-word line selecting circuit includes circuits provided for the respective decode fast signals complementary to one another of the pair, and for individually receiving a corresponding pair of complementary decode fast signals to generate a pair of complementary sub-word line output signals for outputting as said sub-word line select signals.
Claim 6
Dependent Claim
221 words
A semiconductor memory device, comprising: a sub word line connecting to memory cells arranged on a row; a main word line arranged corresponding to said sub word line; a predecoder receiving an address signal and predecoding the address signal to produce first and second predecode signals; a word decoder receiving and decoding the first predecode signal to produce a sub word decode signal; a first sub decoder coupled to said word decoder and producing a first sub decode signal in response to said sub word decode signal, said first sub decoder receiving a first operating power supply voltage from a first power source for operation; a second sub decoder coupled to said word decoder and producing a second sub decode signal in response to said sub word decode signal, the second sub decoder receiving a second power supply voltage from a second power supply source different from said first power source for operation; a row decoder receiving and decoding the second predecode signal to produce a main word line selecting signal onto said main word line; and a sub word driver coupled to said main word line and the first and second sub decoder, for driving said sub word line to a selected state in accordance with the first and second sub decode signals and the main word line selecting signal.
Claim 7
Dependent Claim
221 words
A semiconductor memory device, comprising: a sub word line connecting to memory cells arranged on a row; a main word line arranged corresponding to said sub word line; a predecoder receiving an address signal and predecoding the address signal to produce first and second predecode signals; a word decoder receiving and decoding the first predecode signal to produce a sub word decode signal; a first sub decoder coupled to said word decoder and producing a first sub decode signal in response to said sub word decode signal, said first sub decoder receiving a first operating power supply voltage from a first power source for operation; a second sub decoder coupled to said word decoder and producing a second sub decode signal in response to said sub word decode signal, the second sub decoder receiving a second power supply voltage from a second power supply source different from said first power source for operation; a row decoder receiving and decoding the second predecode signal to produce a main word line selecting signal onto said main word line; and a sub word driver coupled to said main word line and the first and second sub decoder, for driving said sub word line to a selected state in accordance with the first and second sub decode signals and the main word line selecting signal.
Claim 8
Dependent Claim
33 words
The semiconductor memory device according to claim 5 , wherein the first and second power sources are independent of each other and generate the first and second power supply voltages at different levels.
Claim 9
Dependent Claim
58 words
The semiconductor memory device according to claim 5 , where the sub word line is arranged in plurality alignedly in a row direction, and the main word line is provided commonly to the sub word lines arranged in plurality, and the first and second sub decoders are provided in common to the sub word lines arranged in plurality.
Claim 10
Dependent Claim
59 words
The semiconductor memory device according to claim 5 , wherein the sub word line is arranged in plurality aligned in a row direction, and the sub word lines arranged in plurality are divided into groups in the row direction and the first and second sub decoders are arranged in a region between the groups adjacent in the row direction.
Claim 11
Dependent Claim
40 words
The semiconductor memory device according to claim 5 , wherein the first and second sub decoders each comprise a buffer for buffering the sub word decode signal, and the first and second sub decode signals are complementary to each other.
Claim 12
Dependent Claim
48 words
The semiconductor memory device according to claim 5 , wherein the first power supply voltage is one of an array power supply voltage and a peripheral power supply voltage, and the second power supply voltage is a high voltage higher than the array and peripheral power supply voltages.
Claim 13
Dependent Claim
90 words
The semiconductor memory device according to claim 5 , wherein the first sub decoder includes a first buffer using a peripheral power supply voltage as an operating power supply voltage for buffering the sub word decode signal, and a second buffer using an array power supply voltage as an operating power supply voltage for buffering an output of said first buffer, and said second sub decoder includes a third buffer using a high voltage higher than the peripheral and array power supply voltages for buffering the sub word decode signal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-04 | 2014-05-06 | 2014-11-05 | $7700.00 | Window Closed / Lapsed |