Patent US6476433B1 successfully refreshed from Google Patents.
US6476433B1
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Semiconductor interconnection structure and method
Assignee: Micron Technology Inc
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Filing: 2000-09-06
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Granted: 2002-11-05
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Expires: 2020-09-06
Abstract
Abstract A memory device and method in which the capacitor lower electrode within the memory cell array and a first interconnection layer within the peripheral circuitry are provided simultaneously from the same conductive material. The capacitor upper electrode and a second interconnection layer within the peripheral circuitry are also provided simultaneously from the same conductive material.
Inventors
- 👤 Jeff Wu
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:47
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/09; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W; H10W20/00; H10W20/01; H10W20/031; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/315; H10B12/48
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
167 words
A method of forming a DRAM, said method comprising the steps of: providing a memory cell array area and a peripheral circuit area on a semiconductor substrate, providing a first conductive layer in said peripheral circuit area and in said memory cell array area, patterning said first conductive layer as a capacitor lower electrode in said memory cell array area and as first interconnection layer in said peripheral circuit area, providing a dielectric layer over said first conductive layer within said memory cell array area and said peripheral circuit area, wherein at least a portion of said dielectric layer in said memory cell array is comprised of a high K dielectric and at least a portion of said dielectric layer in said peripheral circuit is comprised of a low K dielectric, providing a second conductive layer over said dielectric layer, and patterning said second conductive layer as a capacitor upper electrode in said memory cell array area and a second interconnection layer in said peripheral circuit area.
Claim 2
Independent Claim
167 words
A method of forming a DRAM, said method comprising the steps of: providing a memory cell array area and a peripheral circuit area on a semiconductor substrate, providing a first conductive layer in said peripheral circuit area and in said memory cell array area, patterning said first conductive layer as a capacitor lower electrode in said memory cell array area and as first interconnection layer in said peripheral circuit area, providing a dielectric layer over said first conductive layer within said memory cell array area and said peripheral circuit area, wherein at least a portion of said dielectric layer in said memory cell array is comprised of a high K dielectric and at least a portion of said dielectric layer in said peripheral circuit is comprised of a low K dielectric, providing a second conductive layer over said dielectric layer, and patterning said second conductive layer as a capacitor upper electrode in said memory cell array area and a second interconnection layer in said peripheral circuit area.
Claim 3
Dependent Claim
30 words
The method of claim 1 , wherein said first conductive layer in said memory cell array area and said first interconnection layer in said peripheral circuit area are deposited simultaneously.
Claim 4
Dependent Claim
30 words
The method of claim 2 , wherein said first conductive layer in said memory cell array area and said first interconnection layer in said peripheral circuit area are patterned simultaneously.
Claim 5
Dependent Claim
30 words
The method of claim 1 , wherein said second conductive layer in said memory cell array area and said second interconnection layer in said peripheral circuit area are deposited simultaneously.
Claim 6
Dependent Claim
30 words
The method of claim 4 , wherein said second conductive layer in said memory cell array area and said second interconnection layer in said peripheral circuit area are patterned simultaneously.
Claim 7
Dependent Claim
23 words
The method of claim 1 , wherein at least one of said first and second conductive layers is comprised of a conductive oxide.
Claim 8
Dependent Claim
23 words
The method of claim 6 , wherein said conductive oxide is selected from the group consisting of RuO 2 and IrO 2 .
Claim 9
Dependent Claim
32 words
The method of claim 1 , wherein at least one of said first and second conductive layers is a material selected from the group consisting of Ru, Ir and PtSi 2 .
Claim 10
Dependent Claim
40 words
The method of claim 1 , wherein at least one of said first and second conductive layers is a material selected from the group consisting of WSi 2 , Al, Al 2 O 3 , Ti, TiN, Pt, and W.
Claim 11
Dependent Claim
37 words
The memory device of claim 1 , wherein said dielectric layer is a material selected from the group consisting of ST, BST, PZT , SBT, TaO 5 , TiO 2 , and T 2 O 3 .
Claim 12
Independent Claim
147 words
A method of electrically connecting a memory cell array to peripheral circuitry within a computer memory system, said method comprising the steps of: providing a memory cell array having at least one capacitor including an upper electrode layer and a lower electrode layer, providing a peripheral circuit area having first and second interconnection layers, wherein said first interconnection layer is deposited in the same step and formed of the same material as said lower electrode layer and said second interconnection layer is deposited in the same step and formed of the same material as said upper electrode layer, providing a first dielectric film between said upper and lower electrode layers, wherein said first dielectric film is comprised of a high K dielectric, and providing a second dielectric film between said first and second interconnection layers, wherein said second dielectric film is comprised of a low K dielectric.
Claim 13
Independent Claim
147 words
A method of electrically connecting a memory cell array to peripheral circuitry within a computer memory system, said method comprising the steps of: providing a memory cell array having at least one capacitor including an upper electrode layer and a lower electrode layer, providing a peripheral circuit area having first and second interconnection layers, wherein said first interconnection layer is deposited in the same step and formed of the same material as said lower electrode layer and said second interconnection layer is deposited in the same step and formed of the same material as said upper electrode layer, providing a first dielectric film between said upper and lower electrode layers, wherein said first dielectric film is comprised of a high K dielectric, and providing a second dielectric film between said first and second interconnection layers, wherein said second dielectric film is comprised of a low K dielectric.
Claim 14
Dependent Claim
30 words
The method of claim 11 , wherein said lower electrode layer in said memory cell array area and said first interconnection layer in said peripheral circuit area are deposited simultaneously.
Claim 15
Dependent Claim
30 words
The method of claim 12 , wherein said lower electrode layer in said memory cell array area and said first interconnection layer in said peripheral circuit area are patterned simultaneously.
Claim 16
Dependent Claim
30 words
The method of claim 11 , wherein said upper electrode layer in said memory cell array area and said second interconnection layer in said peripheral circuit area are deposited simultaneously.
Claim 17
Dependent Claim
30 words
The method of claim 14 , wherein said upper electrode layer in said memory cell array area and said second interconnection layer in said peripheral circuit area are patterned simultaneously.
Claim 18
Dependent Claim
21 words
The method of claim 11 , wherein at least one of said upper and lower electrode layers is a conductive oxide.
Claim 19
Dependent Claim
23 words
The method of claim 16 , wherein said conductive oxide is selected from the group consisting of RuO 2 and IrO 2 .
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
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