Patent US6475867B1 successfully refreshed from Google Patents.
US6475867B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming integrated circuit features by oxidation of titanium hard mask
Assignee: GlobalFoundries Inc
•
Filing: 2001-04-02
•
Granted: 2002-11-05
•
Expires: 2021-04-02
Abstract
Abstract An exemplary method of forming integrated circuit device features by oxidization of titanium hard mask is described. This method can include providing a photoresist pattern of photoresist features over a first layer of material deposited over a second layer of material; etching the first layer of material according to the photoresist pattern to form material features; oxidizing exposed portions of the material features where the material features are made of a material which expands during oxidation; and etching the second layer of material according to the material features which have expanded as a result of oxidation. Advantageously, the expansion of the material features results in a smaller distance between material features than the distance between photoresist features.
Inventors
- 👤 Angela T. Hui
- 👤 Kouros Ghandehari
- 👤 Bhanwar Singh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:28
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10P76/4088
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
107 words
A method of forming integrated circuit device features by oxidization of titanium hard mask, the method comprising: providing a photoresist pattern of photoresist features over a first layer of material deposited over a second layer of material; etching the first layer of material according to the photoresist pattern to form material features; oxidizing exposed portions of the material features, the material features being made of a material which expands during oxidation; and etching the second layer of material according to the material features which have expanded as a result of oxidation, the expansion resulting in a smaller distance between material features than the distance between photoresist features.
Claim 2
Independent Claim
107 words
A method of forming integrated circuit device features by oxidization of titanium hard mask, the method comprising: providing a photoresist pattern of photoresist features over a first layer of material deposited over a second layer of material; etching the first layer of material according to the photoresist pattern to form material features; oxidizing exposed portions of the material features, the material features being made of a material which expands during oxidation; and etching the second layer of material according to the material features which have expanded as a result of oxidation, the expansion resulting in a smaller distance between material features than the distance between photoresist features.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein the material of the first layer of material is titanium.
Claim 4
Dependent Claim
22 words
The method of claim 1 , wherein the step of oxidizing exposed portions of material features comprises providing, an unaltered atmospheric environment.
Claim 5
Dependent Claim
19 words
The method of claim 1 , wherein the etching the first layer of material comprises providing a plasma etch.
Claim 6
Dependent Claim
23 words
The method of claim 1 , wherein the material of the first layer of material is any material that expands due to oxidation.
Claim 7
Dependent Claim
20 words
The method of claim 1 , wherein the photoresist pattern includes a distance between photoresist features which is 1600-2500 Angstroms.
Claim 8
Dependent Claim
23 words
The method of claim 1 , wherein the expansion of the material features results in a distance between material features of 1400-2300 Angstroms.
Claim 9
Independent Claim
89 words
A method of manufacturing an integrated circuit comprising: depositing a photoresist material over a layer of titanium deposited over an inter-level dielectric (ILD) layer; etching the photoresist material to form photoresist features having a first separation distance from each other; etching the layer of titanium using the photoresist features as a mask to form titanium features; and oxidizing the titanium features such that the titanium features expand and are separated from each other by a second separation distance, the second separation distance being less than the first separation distance.
Claim 10
Independent Claim
89 words
A method of manufacturing an integrated circuit comprising: depositing a photoresist material over a layer of titanium deposited over an inter-level dielectric (ILD) layer; etching the photoresist material to form photoresist features having a first separation distance from each other; etching the layer of titanium using the photoresist features as a mask to form titanium features; and oxidizing the titanium features such that the titanium features expand and are separated from each other by a second separation distance, the second separation distance being less than the first separation distance.
Claim 11
Dependent Claim
14 words
The method of claim 8 , wherein the first separation distance is 1600-2500 Angstroms.
Claim 12
Dependent Claim
14 words
The method of claim 8 , wherein the second separation distance is 1400-2300 Angstroms.
Claim 13
Dependent Claim
26 words
The method of claim 8 , further comprising using the expanded titanium features as a hard mask to etch a contact hole in the ILD layer.
Claim 14
Dependent Claim
26 words
The method of claim 8 , further comprising using the expanded titanium features as a hard mask to etch a trench line in the ILD layer.
Claim 15
Dependent Claim
20 words
The method of claim 8 , wherein the expanded titanium features have a width of approximately 100 Angstroms per side.
Claim 16
Independent Claim
101 words
A method of forming integrated circuit device features, the method comprising: patterning an oxidizable layer using a resist layer to form at least two oxidizable features; oxidizing the at least two oxidizable features, the at least two oxidizable features including a material that expands during oxidation, wherein a distance between the at least two oxidizable features decreases due to expansion of the at least two oxidizable features during oxidation; and patterning a layer under the at least two oxidizable features to form a feature, the feature having a critical dimension substantially equivalent to the distance between,the at least two oxidizable features.
Claim 17
Independent Claim
101 words
A method of forming integrated circuit device features, the method comprising: patterning an oxidizable layer using a resist layer to form at least two oxidizable features; oxidizing the at least two oxidizable features, the at least two oxidizable features including a material that expands during oxidation, wherein a distance between the at least two oxidizable features decreases due to expansion of the at least two oxidizable features during oxidation; and patterning a layer under the at least two oxidizable features to form a feature, the feature having a critical dimension substantially equivalent to the distance between,the at least two oxidizable features.
Claim 18
Dependent Claim
19 words
The method of claim 14 , wherein oxidizing the at least two oxidizable features comprises oxidizing at ambient temperature.
Claim 19
Dependent Claim
13 words
The method of claim 14 , wherein the feature is a contact hole.
Claim 20
Dependent Claim
21 words
The method of claim 14 , wherein oxidizing the at least two oxidizable features comprises performing a rapid thermal anneal (RTA).
Claim 21
Dependent Claim
12 words
The method of claim 14 , wherein the distance is 1400-2300 Angstroms.
Claim 22
Dependent Claim
11 words
The method of claim 14 , wherein the material is titanium.
Claim 23
Dependent Claim
16 words
The method of claim 14 , wherein patterning an oxidizing layer comprises providing a plasma etch.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-04 | 2014-05-06 | 2014-11-05 | $7700.00 | Window Closed / Lapsed |