US6465311B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a MOSFET structure having improved source/drain junction performance
Assignee: Koninklijke Philips NV
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Filing: 2001-04-17
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Granted: 2002-10-15
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Expires: 2021-04-17
Abstract
Abstract A MOSFET structure having substantially reduced parasitic junction capacitance, relaxed thermal budget constraints and resiliency to hot carrier damage is disclosed. The MOSFET structure includes a gate stack that is disposed over a gate oxide that is in turn disposed over an active region of a substrate. A pair of shallow trenches are defined on either side of the gate stack, and an intrinsic silicon material is disposed within the pair of shallow trenches up to a top surface of the gate stack. The MOSFET structure further includes source and drain implanted impurities that are defined in an upper portion of the intrinsic silicon material. The upper portion is configured to extend down into the intrinsic silicon material to a target diffusion level that is just below the gate oxide of the gate stack.
Inventors
- 👤 Jayarama N. Shenoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:27
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0217; H10D30/027; H10D30/0275; H10D62/00; H10D62/01; H10D62/021; H10D62/10; H10D62/113; H10D62/115; H10D62/116
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
167 words
A method for making a MOSFET structure having reduced parasitic junction capacitance, comprising: forming shallow trench isolation regions in a substrate to define an active region; forming a gate stack over the active region; implanting lightly doped drain impurities into the active region on either side of the gate stack; forming oxide sidewalls around the gate stack; forming shallow trenches in the active region on either side of the gate stack, the shallow trenches are configured to remove most of the implanted lightly doped drain impurities except for a portion of impurities that lie under the oxide sidewalls; depositing an intrinsic silicon into the shallow trenches up to at least a topmost level of the gate stack; and implanting source drain impurities over the intrinsic silicon and the gate stack, the implanted impurities being configured to partially diffuse into the intrinsic silicon such that an electrical connection can be made to the portion of impurities of the lightly doped drain impurities that lie under the oxide sidewalls.
Claim 2
Independent Claim
167 words
A method for making a MOSFET structure having reduced parasitic junction capacitance, comprising: forming shallow trench isolation regions in a substrate to define an active region; forming a gate stack over the active region; implanting lightly doped drain impurities into the active region on either side of the gate stack; forming oxide sidewalls around the gate stack; forming shallow trenches in the active region on either side of the gate stack, the shallow trenches are configured to remove most of the implanted lightly doped drain impurities except for a portion of impurities that lie under the oxide sidewalls; depositing an intrinsic silicon into the shallow trenches up to at least a topmost level of the gate stack; and implanting source drain impurities over the intrinsic silicon and the gate stack, the implanted impurities being configured to partially diffuse into the intrinsic silicon such that an electrical connection can be made to the portion of impurities of the lightly doped drain impurities that lie under the oxide sidewalls.
Claim 3
Dependent Claim
37 words
A method for making a MOSFET structure as recited in claim 1 , further comprising: performing a chemical mechanical polishing operation after the depositing of the intrinsic silicon and before the implanting of the source drain impurities.
Claim 4
Dependent Claim
34 words
A method for making a MOSFET structure as recited in claim 1 , wherein forming shallow trenches in the active region comprises: etching between about 1,000 angstroms and about 6,000 angstroms of the substrate.
Claim 5
Dependent Claim
41 words
A method for making a MOSFET structure as recited in claim 1 , wherein the forming of the gate stack over the active region includes: forming a gate oxide; forming a polysilicon gate; forming a pad oxide over the polysilicon gate.
Claim 6
Dependent Claim
34 words
A method for making a MOSFET structure as recited in claim 1 , wherein the parasitic junction capacitance is reduced due to the intrinsic silicon material that has a very low impurity concentration level.
Claim 7
Dependent Claim
32 words
A method for making a MOSFET structure as recited in claim 5 , wherein the very low impurity concentration level is less than or equal to about 1×10 14 atoms/cm −3 .
Claim 8
Dependent Claim
33 words
A method for making a MOSFET structure as recited in claim 1 , wherein the intrinsic silicon material assists in reducing a lateral electric field which therefore assists in reducing hot carrier damage.
Claim 9
Dependent Claim
33 words
A method for making a MOSFET structure as recited in claim 1 , wherein the implanting of the source drain impurities over the intrinsic silicon reduces punch-through and relaxes the thermal budget constrains.
Claim 10
Dependent Claim
41 words
A method for making a MOSFET structure as recited in claim 1 , wherein the depositing of the intrinsic silicon is performed by one of a selective epitaxy deposition, a non-selective deposition of crystalline, and a non-selective deposition of polycrystalline silicon.
Claim 11
Independent Claim
157 words
A method for making a MOSFET structure having reduced parasitic junction capacitance, comprising: forming a gate stack over an active region of a substrate; implanting lightly doped drain impurities into the active region on either side of the gate stack; forming oxide sidewalls around the gate stack; forming shallow trenches in the active region on either side of the gate stack, the shallow trenches are configured to remove most of the implanted lightly doped drain impurities except for a portion of impurities that lie under the oxide sidewalls; depositing an intrinsic silicon into the shallow trenches up to at least a topmost level of the gate stack; and implanting source drain impurities over the intrinsic silicon and the gate stack, the implanted impurities being configured to partially diffuse into the intrinsic silicon such that an electrical connection can be made to the portion of impurities of the lightly doped drain impurities that lie under the oxide sidewalls.
Claim 12
Independent Claim
157 words
A method for making a MOSFET structure having reduced parasitic junction capacitance, comprising: forming a gate stack over an active region of a substrate; implanting lightly doped drain impurities into the active region on either side of the gate stack; forming oxide sidewalls around the gate stack; forming shallow trenches in the active region on either side of the gate stack, the shallow trenches are configured to remove most of the implanted lightly doped drain impurities except for a portion of impurities that lie under the oxide sidewalls; depositing an intrinsic silicon into the shallow trenches up to at least a topmost level of the gate stack; and implanting source drain impurities over the intrinsic silicon and the gate stack, the implanted impurities being configured to partially diffuse into the intrinsic silicon such that an electrical connection can be made to the portion of impurities of the lightly doped drain impurities that lie under the oxide sidewalls.
Claim 13
Independent Claim
167 words
A method for making a MOSFET structure having reduced parasitic junction capacitance, comprising: forming a gate over an active region of a substrate; implanting lightly doped drain impurities into the active region on either side of the gate; forming oxide sidewalls around the gate; forming shallow trenches in the active region on either side of the gate, the shallow trenches are configured to remove most of the implanted lightly doped drain impurities except for a portion of impurities that lie under the oxide sidewalls; depositing an intrinsic silicon into the shallow trenches up to at least a topmost level of the gate; and implanting source drain impurities over the intrinsic silicon and the gate, the implanted impurities being configured to partially diffuse into the intrinsic silicon such that an electrical connection can be made to the portion of impurities of the lightly doped drain impurities that lie under the oxide sidewalls, the implanting of the source drain impurities over the intrinsic silicon being configured to reduce punch-through.
Claim 14
Independent Claim
167 words
A method for making a MOSFET structure having reduced parasitic junction capacitance, comprising: forming a gate over an active region of a substrate; implanting lightly doped drain impurities into the active region on either side of the gate; forming oxide sidewalls around the gate; forming shallow trenches in the active region on either side of the gate, the shallow trenches are configured to remove most of the implanted lightly doped drain impurities except for a portion of impurities that lie under the oxide sidewalls; depositing an intrinsic silicon into the shallow trenches up to at least a topmost level of the gate; and implanting source drain impurities over the intrinsic silicon and the gate, the implanted impurities being configured to partially diffuse into the intrinsic silicon such that an electrical connection can be made to the portion of impurities of the lightly doped drain impurities that lie under the oxide sidewalls, the implanting of the source drain impurities over the intrinsic silicon being configured to reduce punch-through.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-10-14 | 2006-04-15 | 2006-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-14 | 2010-04-15 | 2010-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-14 | 2014-04-15 | 2014-10-15 | $7700.00 | Window Closed / Lapsed |