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US6462641B1
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Magnetoresistor with tunnel effect and magnetic sensor using same
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1999-02-10
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Granted: 2002-10-08
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Expires: 2019-02-10
Abstract
Abstract Tunnel effect magnetoresistance comprising, in the form of a stack:a first layer (12) of free magnetisation magnetic material,a "barrier" layer (16), composed of an electrically insulating material, anda second layer (14) of trapped magnetisation magnetic material,According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm.The invention may be particularly applied to the manufacture of magnetic data read heads.
Inventors
- 👤 Bernard Dieny
- 👤 Laurence Giacomoni
- 👤 Anatoly Vedyaev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:24
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y10/00; B82Y25/00; G01R33/098; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3906; G11B5/3909; G11B2005/3996
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
89 words
Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer ( 12 ) of free magnetisation magnetic material, a “barrier” layer ( 16 ), composed of an electrically insulating material, a second layer ( 14 ) of trapped magnetisation magnetic material, and a layer ( 24 ) of non-ferromagnetic metal inserted between the first layer of magnetic material and the insulating barrier layer, characterized in that the thickness of the first layer ( 12 ) of magnetic material is less than or equal to 7 nm.
Claim 2
Dependent Claim
89 words
Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer ( 12 ) of free magnetisation magnetic material, a “barrier” layer ( 16 ), composed of an electrically insulating material, a second layer ( 14 ) of trapped magnetisation magnetic material, and a layer ( 24 ) of non-ferromagnetic metal inserted between the first layer of magnetic material and the insulating barrier layer, characterized in that the thickness of the first layer ( 12 ) of magnetic material is less than or equal to 7 nm.
Claim 3
Dependent Claim
26 words
Magnetoresistance according to claim 1 , wherein the thickness of the first layer ( 12 ) of magnetic material is between 0.2 nm and 2 nm.
Claim 4
Dependent Claim
26 words
Magnetoresistance according to claim 1 , wherein the thickness of the second layer ( 14 ) of magnetic material is between 0.4 nm and 2 nm.
Claim 5
Dependent Claim
37 words
Magnetoresistance according to claim 1 , also comprising at least one doping layer of magnetic material ( 20 , 22 ) in contact with at least one of the first and second layers of magnetic material, respectively.
Claim 6
Dependent Claim
28 words
Magnetoresistance according to claim 1 , wherein the doping layer ( 20 , 22 ) is a layer composed of a Co 1−x Fe x alloy, where 0≦×≦1.
Claim 7
Dependent Claim
36 words
Magnetoresistance according to claim 1 , also comprising a layer of anti-ferromagnetic material ( 18 ) in contact with the second layer of magnetic material ( 14 ) to trap the magnetisation of said second layer.
Claim 8
Dependent Claim
36 words
Magnetoresistance according to claim 1 , also comprising two current supply layers ( 30 , 32 ) in electrical contact with the first ( 12 ) and second ( 14 ) layers of magnetic material, respectively.
Claim 9
Dependent Claim
42 words
Magnetoresistance according to claim 7 , also comprising at least one metal buffer layer ( 26 ) between the first layer of magnetic material ( 12 ) and the current supply layer ( 30 ) in electrical contact with said first layer.
Claim 10
Dependent Claim
14 words
Magnetic sensor comprising at least one magnetoresistance according to any of the preceding claims.
Claim 11
Dependent Claim
89 words
Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer ( 12 ) of free magnetisation magnetic material, a “barrier” layer ( 16 ), composed of an electrically insulating material, a second layer ( 14 ) of trapped magnetisation magnetic material, and a layer ( 26 ) of non-ferromagnetic metal inserted between the insulating barrier layer and the second layer of magnetic material, characterized in that the thickness of the first layer ( 12 ) of magnetic material is less than or equal to 7 nm.
Claim 12
Dependent Claim
89 words
Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer ( 12 ) of free magnetisation magnetic material, a “barrier” layer ( 16 ), composed of an electrically insulating material, a second layer ( 14 ) of trapped magnetisation magnetic material, and a layer ( 26 ) of non-ferromagnetic metal inserted between the insulating barrier layer and the second layer of magnetic material, characterized in that the thickness of the first layer ( 12 ) of magnetic material is less than or equal to 7 nm.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-10-07 | 2006-04-08 | 2006-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-07 | 2010-04-08 | 2010-10-08 | $3760.00 | Window Closed / Lapsed |
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