US6458661B1
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Method of forming NROM
Assignee: Macronix International Co Ltd
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Filing: 2001-06-18
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Granted: 2002-10-01
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Expires: 2021-06-18
Abstract
Abstract A method of forming a nitride read only memory (NROM) is disclosed. On the present invention's method of forming the NROM, firstly one or a plurality of isolated layers are formed to cover the oxide/nitride/oxide (ONO) structure and the gate, and the silicon nitride (SiN x ) spacer is formed to protect the NROM cell. If the silicon nitride spacer contacts with the gate directly, the threshold voltage of the NROM device will increase, therefore the present invention uses one or a plurality of the isolated layers composed of the silicon oxides (SiO y ) to isolate the NROM device and the silicon nitride spacer. It not only can protect the NROM device, but also can avoid side effects resulting from the use of the silicon nitride spacer and inducing the leakage current between the devices.
Inventors
- 👤 Jiann-Long Sung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0413; H10D64/00; H10D64/01; H10D64/031; H10D64/037; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
80 words
A method of forming a nitride read only memory (NROM), comprising: providing a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; forming a gate to cover portion of the oxide/nitride/oxide structure; forming an isolated layer to cover the gate and the other portion of the oxide/nitride/oxide structure; forming a spacer, wherein the spacer is located on the sidewall of the isolated layer; and forming an insulated layer to cover the substrate, the spacer, and the isolated layer.
Claim 2
Independent Claim
80 words
A method of forming a nitride read only memory (NROM), comprising: providing a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; forming a gate to cover portion of the oxide/nitride/oxide structure; forming an isolated layer to cover the gate and the other portion of the oxide/nitride/oxide structure; forming a spacer, wherein the spacer is located on the sidewall of the isolated layer; and forming an insulated layer to cover the substrate, the spacer, and the isolated layer.
Claim 3
Dependent Claim
18 words
The method according to claim 1 , wherein the gate includes a polysilicon layer and a silicide layer.
Claim 4
Dependent Claim
21 words
The method according to claim 1 , wherein the step of forming the isolated layer is performed by a conformal deposition.
Claim 5
Dependent Claim
20 words
The method according to claim 1 , wherein a material of the isolated layer is silicon oxide (SiO y ).
Claim 6
Dependent Claim
18 words
The method according to claim 1 , wherein the isolated layer and the spacer constitute a protective structure.
Claim 7
Dependent Claim
21 words
The method according to claim 1 , wherein a material of the spacer is silicon nitride (Si 3 N 4 ).
Claim 8
Dependent Claim
68 words
A nitride read only memory (NROM) structure, comprising: a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; a gate located on portion of the oxide/nitride/oxide structure; an isolated layer located on the gate and the other portion of the oxide/nitride/oxide structure; a spacer located on the sidewall of the isolated layer; and an insulated layer located on the substrate, the spacer, and the isolated layer.
Claim 9
Dependent Claim
68 words
A nitride read only memory (NROM) structure, comprising: a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; a gate located on portion of the oxide/nitride/oxide structure; an isolated layer located on the gate and the other portion of the oxide/nitride/oxide structure; a spacer located on the sidewall of the isolated layer; and an insulated layer located on the substrate, the spacer, and the isolated layer.
Claim 10
Dependent Claim
20 words
The nitride read only memory according to claim 7 , wherein the isolated layer is performed by a conformal deposition.
Claim 11
Dependent Claim
23 words
The nitride read only memory according to claim 7 , wherein a material of the isolated layer is silicon oxide (SiO y ).
Claim 12
Dependent Claim
21 words
The nitride read only memory according to claim 7 , wherein the isolated layer and the spacer constitute a protective structure.
Claim 13
Dependent Claim
24 words
The nitride read only memory according to claim 7 , wherein a material of the spacer is silicon nitride (Si 3 N 4 ).
Claim 14
Independent Claim
82 words
A method of forming a nitride read only memory (NROM), comprising: providing a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; forming a gate to cover portion of the oxide/nitride/oxide structure; forming a plurality of isolated layers to cover the gate and the other portion of the oxide/nitride/oxide structure; forming a spacer, wherein the spacer is located on the sidewall of the isolated layers; and forming an insulated layer to cover the substrate, the spacer, and the isolated layers.
Claim 15
Independent Claim
82 words
A method of forming a nitride read only memory (NROM), comprising: providing a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; forming a gate to cover portion of the oxide/nitride/oxide structure; forming a plurality of isolated layers to cover the gate and the other portion of the oxide/nitride/oxide structure; forming a spacer, wherein the spacer is located on the sidewall of the isolated layers; and forming an insulated layer to cover the substrate, the spacer, and the isolated layers.
Claim 16
Dependent Claim
21 words
The method according to claim 12 , wherein the step of forming the isolated layers is performed by a conformal deposition.
Claim 17
Dependent Claim
35 words
The method according to claim 12 , wherein materials of the isolated layers are selected from silicon oxides (SiO y ), and the materials of any two adjacent layers of the isolated layers are different.
Claim 18
Dependent Claim
18 words
The method according to claim 12 , wherein the isolated layers and the spacer constitute a protective structure.
Claim 19
Dependent Claim
21 words
The method according to claim 12 , wherein a material of the spacer is silicon nitride (Si 3 N 4 ).
Claim 20
Dependent Claim
70 words
A nitride read only memory (NROM) structure, comprising: a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; a gate located on portion of the oxide/nitride/oxide structure; a plurality of isolated layers located on the gate and the other portion of the oxide/nitride/oxide structure; a spacer located on the sidewall of the isolated layers; and an insulated layer located on the substrate, the spacer, and the isolated layers.
Claim 21
Dependent Claim
70 words
A nitride read only memory (NROM) structure, comprising: a substrate, wherein the substrate has an oxide/nitride/oxide (ONO) structure formed thereon; a gate located on portion of the oxide/nitride/oxide structure; a plurality of isolated layers located on the gate and the other portion of the oxide/nitride/oxide structure; a spacer located on the sidewall of the isolated layers; and an insulated layer located on the substrate, the spacer, and the isolated layers.
Claim 22
Dependent Claim
20 words
The nitride read only memory according to claim 17 , wherein the isolated layers is performed by a conformal deposition.
Claim 23
Dependent Claim
38 words
The nitride read only memory according to claim 17 , wherein materials of the isolated layers are selected from silicon oxides (SiO y ), and the materials of any two adjacent layers of the isolated layers are different.
Claim 24
Dependent Claim
21 words
The nitride read only memory according to claim 17 , wherein the isolated layers and the spacer constitute a protective structure.
Claim 25
Dependent Claim
24 words
The nitride read only memory according to claim 17 , wherein a material of the spacer is silicon nitride (Si 3 N 4 ).
References Cited (Backward Citations)
US6399466B2
Cited
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