US6451694B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films
Assignee: Samsung Electronics Co Ltd
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Filing: 2001-04-04
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Granted: 2002-09-17
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Expires: 2021-04-04
Abstract
Abstract In a process for mitigating and/or eliminating the abnormal growth of underlying polysilicon in dichloro silane-based CVD polycide WSix films, a first technique conducts the deposition of the underlying polysilicon layer at a temperature that substantially avoids crystallization of the underlying polysilicon. A second approach reduces the exposure (for example time period and or concentration) of the mono-silane SiH4 post flush, so as to avoid infusion of silicon into the underlying polysilicon layer, and resulting abnormal growth. In this manner, abnormal effects, such as stress fractures formed in subsequent layers, can be eliminated.
Inventors
- 👤 Jeon-Sig Lim
- 👤 Jin-ho Jeon
- 👤 Jong-Seung Yi
- 👤 Chul-Hwan Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/414; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P14/42; H10P14/43; Y; Y10; Y10S; Y10S438/00; Y10S438/903
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
153 words
A method of forming a double-layered semiconductor film comprising: providing a polysilicon layer on an underlying substrate in a diffusion process conducted at a first temperature that substantially avoids crystallization of the polysilicon; raising the temperature of the polysilicon layer to a second temperature; flushing the polysilicon layer with a first flush material to provide a transition layer; flushing the polysilicon layer with a second flush material to provide a second material layer over the polysilicon layer, the transition layer providing adherence characteristics between the second material layer and the polysilicon layer; providing a combination of the first flush material and the second flush material to deposit a bulk second material layer on the transition layer; flushing the bulk second material layer with the second flush material to remove impurities; and flushing the bulk second material layer with the first flush material to mitigate stress between the polysilicon layer and second material layer.
Claim 2
Independent Claim
153 words
A method of forming a double-layered semiconductor film comprising: providing a polysilicon layer on an underlying substrate in a diffusion process conducted at a first temperature that substantially avoids crystallization of the polysilicon; raising the temperature of the polysilicon layer to a second temperature; flushing the polysilicon layer with a first flush material to provide a transition layer; flushing the polysilicon layer with a second flush material to provide a second material layer over the polysilicon layer, the transition layer providing adherence characteristics between the second material layer and the polysilicon layer; providing a combination of the first flush material and the second flush material to deposit a bulk second material layer on the transition layer; flushing the bulk second material layer with the second flush material to remove impurities; and flushing the bulk second material layer with the first flush material to mitigate stress between the polysilicon layer and second material layer.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein flushing the bulk second material layer with the first flush material is limited in time duration to substantially avoid abnormal growth of the underlying polysilicon layer.
Claim 4
Dependent Claim
31 words
The method of claim 1 wherein flushing the bulk second material layer with the first flush material is limited in concentration to substantially avoid abnormal growth of the underlying polysilicon layer.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the first temperature is equal to or less than 530 Celsius.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein the second temperature is equal to or greater than 620 Celsius.
Claim 7
Dependent Claim
27 words
The method of claim 1 wherein the second temperature is raised to a level greater than 620 Celsius to reduce resistivity in the resulting double-layered semiconductor film.
Claim 8
Dependent Claim
16 words
The method of claim 1 further comprising following providing the polysilicon layer, pre-cleaning the polysilicon layer.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein providing a polysilicon layer is conducted at atmospheric pressure.
Claim 10
Dependent Claim
16 words
The method of claim 1 wherein the second material layer comprises tungsten silicide WSi x .
Claim 11
Dependent Claim
34 words
The method of claim 1 further comprising following flushing of the polysilicon layer with a second flush material, providing nucleation of the second material layer to reduce grain size of the second material layer.
Claim 12
Dependent Claim
41 words
The method of claim 1 further comprising following flushing the bulk second material layer with the second flush material, providing nucleation of the bulk second material layer to reduce grain size of a top portion of the bulk second material layer.
Claim 13
Dependent Claim
34 words
The method of claim 1 wherein the first flush material comprises silane SiH 4 and wherein the second flush material comprises di-chloro silane (DCS) SiH 2 Cl 2 and tungsten fluoride WF 6 .
Claim 14
Independent Claim
161 words
A method of forming a double-layered semiconductor film comprising: providing a polysilicon layer on an underlying substrate at a first temperature; raising the temperature of the polysilicon layer to a second temperature; flushing the polysilicon layer with a first flush material to provide a transition layer; flushing the polysilicon layer with a second flush material to provide a second material layer over the polysilicon layer, the transition layer providing adherence characteristics between the second material layer and the polysilicon layer; providing a combination of the first flush material and the second flush material to deposit a bulk second material layer on the transition layer; flushing the bulk second material layer with the second flush material to remove impurities; and flushing the bulk second material layer with the first flush material to mitigate stress between the polysilicon layer and second material layer, the exposure of first flush material being limited so as to substantially avoid abnormal growth of the underlying polysilicon layer.
Claim 15
Independent Claim
161 words
A method of forming a double-layered semiconductor film comprising: providing a polysilicon layer on an underlying substrate at a first temperature; raising the temperature of the polysilicon layer to a second temperature; flushing the polysilicon layer with a first flush material to provide a transition layer; flushing the polysilicon layer with a second flush material to provide a second material layer over the polysilicon layer, the transition layer providing adherence characteristics between the second material layer and the polysilicon layer; providing a combination of the first flush material and the second flush material to deposit a bulk second material layer on the transition layer; flushing the bulk second material layer with the second flush material to remove impurities; and flushing the bulk second material layer with the first flush material to mitigate stress between the polysilicon layer and second material layer, the exposure of first flush material being limited so as to substantially avoid abnormal growth of the underlying polysilicon layer.
Claim 16
Dependent Claim
30 words
The method of claim 13 wherein providing a polysilicon layer is performed in a diffusion process conducted at the first temperature so as to substantially avoid crystallization of the polysilicon.
Claim 17
Dependent Claim
27 words
The method of claim 13 wherein the exposure of first flush material is limited in time duration to substantially avoid abnormal growth of the underlying polysilicon layer.
Claim 18
Dependent Claim
26 words
The method of claim 14 wherein the exposure of first flush material is limited in concentration to substantially avoid abnormal growth of the underlying polysilicon layer.
Claim 19
Dependent Claim
17 words
The method of claim 14 wherein the first temperature is equal to or less than 530 Celsius.
Claim 20
Dependent Claim
17 words
The method of claim 14 wherein the second temperature is equal to or greater than 620 Celsius.
Claim 21
Dependent Claim
27 words
The method of claim 14 wherein the second temperature is raised to a level greater than 620 Celsius to reduce resistivity in the resulting double-layered semiconductor film.
Claim 22
Dependent Claim
16 words
The method of claim 14 further comprising following providing the polysilicon layer, pre-cleaning the polysilicon layer.
Claim 23
Dependent Claim
15 words
The method of claim 14 wherein providing a polysilicon layer is conducted at atmospheric pressure.
Claim 24
Dependent Claim
16 words
The method of claim 14 wherein the second material layer comprises tungsten silicide WSi x .
Claim 25
Dependent Claim
34 words
The method of claim 14 further comprising following flushing of the polysilicon layer with a second flush material, providing nucleation of the second material layer to reduce grain size of the second material layer.
Claim 26
Dependent Claim
41 words
The method of claim 14 further comprising following flushing the bulk second material layer with the second flush material, providing nucleation of the bulk second material layer to reduce grain size of a top portion of the bulk second material layer.
Claim 27
Dependent Claim
34 words
The method of claim 14 wherein the first flush material comprises silane SiH 4 and wherein the second flush material comprises di-chloro silane (DCS) SiH 2 Cl 2 and tungsten fluoride WF 6 .
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