Method for fabricating semiconductor device having a capacitor

Abstract

Abstract Method for fabricating a semiconductor device including the steps of forming an interlayer insulating film, an etch stopper film, and a PE-TEOS film on a semiconductor substrate having an lower side structure formed thereon, by using a contact mask as an etch mask for exposing a portion to be a contact, etching the PE-TEOS film, the etch stopper film, and the interlayer insulating film, to form a contact hole, forming a polysilicon layer for a plug on an entire surface, and etched back, to stuff the contact hole, forming a core oxide film pattern on an entire surface to expose a portion to be a storage electrode, removing the polysilicon layer for a plug stuffed in the storage electrode contact hole by using an etch selectivity of the core oxide film pattern and the PE-TEOS film over the polysilicon layer for plug, to form a recess, to form a wedge type storage electrode contact plug left only in a portion of the interlayer insulating film in the storage electrode contact hole with a collapsed upper portion, and forming a cylindrical storage electrode in contact with the storage electrode contact plug through the recess, thereby increasing a cylinder area of the capacitor to enhance a cell refresh characteristics, securing a cell structural stability and prevent lifting of the cell capacitor during removal of the core oxide film as the capacitor is formed in a wedge type cylindrical structure, and simplifying the fabrication process as the CMP, which is one of the most difficult problems in the related art process, process can be reduced.

Inventors

• 👤 Jun Kwon An

Bibliographic Details