Patent US6448192B1 successfully refreshed from Google Patents.
US6448192B1
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Method for forming a high dielectric constant material
Assignee: NXP USA Inc
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Filing: 2001-04-16
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Granted: 2002-09-10
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Expires: 2021-04-16
Abstract
Abstract Highe quality silicon oxide having a plurality of monolayers is grown at a high temperature on a silicon substrate. A monolayer of silicon oxide is a single layer of silicon atoms and two oxygen atoms per silicon atom bonded thereto. The silicon oxide is etched one monolayer at a time until a desired thickness of the silicon layer is obtained. Each monolayer is removed by introducing a first gas to form a reaction layer on the silicon oxide. The gas is then purged. Then the reaction layer is activated by either another gas or heat. The reaction layer then acts to remove a single monolayer. This process is repeated until a desired amount of silicon oxide layer remains. Because this removal process is limited to removing one monolayer at a time, the removal of silicon oxide is well controlled. This allows for a precise amount of silicon oxide to remain.
Inventors
- 👤 Vidya S. Kaushik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01352; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69397; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/285; H10P14/69391; H10P14/69392; H10P14/69395
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
86 words
A method for making a high dielectric constant gate dielectric on a semiconductor substrate: forming a layer of a silicon oxide layer at a high temperature over a semiconductor substrate, wherein the silicon oxide layer comprises a plurality of monolayers of silicon dioxide; removing a portion of the plurality of monolayers to leave at least one monolayer; and depositing a layer of high dielectric constant material over the at least one monolayer, wherein the high dielectric constant material is not in contact with the semiconductor substrate.
Claim 2
Independent Claim
86 words
A method for making a high dielectric constant gate dielectric on a semiconductor substrate: forming a layer of a silicon oxide layer at a high temperature over a semiconductor substrate, wherein the silicon oxide layer comprises a plurality of monolayers of silicon dioxide; removing a portion of the plurality of monolayers to leave at least one monolayer; and depositing a layer of high dielectric constant material over the at least one monolayer, wherein the high dielectric constant material is not in contact with the semiconductor substrate.
Claim 3
Dependent Claim
19 words
The method of claim 1 , wherein forming is performed at a temperature greater than about 850 degrees Celsius.
Claim 4
Dependent Claim
37 words
The method of claim 2 , wherein forming is performed at a first temperature and removing is performed at a second temperature, wherein the second temperature is at least 650 degrees Celsius less than the first temperature.
Claim 5
Dependent Claim
27 words
The method of claim 3 , wherein the high dielectric constant material comprises a material selected from hafnium oxide, zirconium oxide, zirconium aluminum oxide, and aluminum oxide.
Claim 6
Dependent Claim
14 words
The method of claim 4 , wherein depositing is performed by atomic layer deposition.
Claim 7
Dependent Claim
75 words
The method of claim 5 , further comprising placing the semiconductor substrate in a reaction chamber, and wherein removing further comprises: introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; introducing a second gas into the reaction chamber to cause removing a first monolayer of the plurality of monolayers; and repeating introducing the first gas, purging, and introducing the second gas until the portion of monolayers is removed.
Claim 8
Dependent Claim
22 words
The method of claim 6 , wherein the first gas is CF 4 , and the second gas is CHF 3 .
Claim 9
Dependent Claim
27 words
The method of claim 6 , wherein the first gas is selected from CF 4 and CHF 3 , and the second gas is O 2 .
Claim 10
Dependent Claim
69 words
The method of claim 5 , further comprising placing the substrate in a reaction chamber, and wherein removing further comprises: introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; heating the reaction chamber to cause the removing of a first monolayer of the plurality of monolayers; and repeating introducing the first gas, purging, and heating until the portion of monolayers is removed.
Claim 11
Independent Claim
91 words
A method for semiconductor processing, comprising: providing a semiconductor substrate having a silicon oxide layer comprising a plurality of monolayers; providing a reaction chamber; placing the semiconductor substrate into the reaction chamber; introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; introducing a second gas into the reaction chamber to cause removal of a first monolayer of the plurality of monolayers; and repeating introducing the first gas, purging, and introducing the second gas until a predetermined amount of the silicon oxide layer is removed.
Claim 12
Independent Claim
91 words
A method for semiconductor processing, comprising: providing a semiconductor substrate having a silicon oxide layer comprising a plurality of monolayers; providing a reaction chamber; placing the semiconductor substrate into the reaction chamber; introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; introducing a second gas into the reaction chamber to cause removal of a first monolayer of the plurality of monolayers; and repeating introducing the first gas, purging, and introducing the second gas until a predetermined amount of the silicon oxide layer is removed.
Claim 13
Dependent Claim
21 words
The method of claim 10 , wherein the first gas is CF 4 and the second gas is CHF 3 .
Claim 14
Dependent Claim
21 words
The method of claim 10 , wherein the first gas is CF 4 and the second gas is O 2 .
Claim 15
Dependent Claim
21 words
The method of claim 10 , wherein the first gas is CHF 3 and the second gas is O 2 .
Claim 16
Independent Claim
55 words
A method for semiconductor processing, comprising: providing a semiconductor substrate having a silicon oxide layer comprising a plurality of monolayers; providing a reaction chamber; placing the semiconductor substrate into the reaction chamber; plurality of monolayers; and repeating introducing the first gas, purging, and heating until a predetermined amount of the silicon dioxide layer is removed.
Claim 17
Independent Claim
55 words
A method for semiconductor processing, comprising: providing a semiconductor substrate having a silicon oxide layer comprising a plurality of monolayers; providing a reaction chamber; placing the semiconductor substrate into the reaction chamber; plurality of monolayers; and repeating introducing the first gas, purging, and heating until a predetermined amount of the silicon dioxide layer is removed.
Claim 18
Dependent Claim
20 words
The method of claim 14 , wherein the first gas is selected from HF and CCl 2 F 2 .
Claim 19
Dependent Claim
14 words
The method of claim 15 , wherein the heating is by rapid thermal annealing.
Claim 20
Independent Claim
171 words
A method of forming a transistor, comprising: providing a semiconductor substrate; providing a reaction chamber, forming a semiconductor oxide on the substrate, wherein the semiconductor oxide layer comprises a plurality of monolayers; placing the semiconductor substrate with the semiconductor oxide layer into the reaction chamber; after inserting the semiconductor substrate into the reaction chamber, introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; after purging the reaction chamber, introducing a second gas into the reaction chamber to cause etching of a first monolayer of the plurality of monolayers; repeating introducing the first gas, purging, and introducing the second gas until a predetermined amount of the semiconductor oxide layer is removed to leave an interfacial layer of semiconductor oxide layer on the semiconductor substrate; depositing a layer of high dielectric constant material over the interfacial layer; forming a gate electrode over the layer of high dielectric constant material; and forming a source and a drain in the semiconductor substrate and adjacent to the gate electrode.
Claim 21
Independent Claim
171 words
A method of forming a transistor, comprising: providing a semiconductor substrate; providing a reaction chamber, forming a semiconductor oxide on the substrate, wherein the semiconductor oxide layer comprises a plurality of monolayers; placing the semiconductor substrate with the semiconductor oxide layer into the reaction chamber; after inserting the semiconductor substrate into the reaction chamber, introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; after purging the reaction chamber, introducing a second gas into the reaction chamber to cause etching of a first monolayer of the plurality of monolayers; repeating introducing the first gas, purging, and introducing the second gas until a predetermined amount of the semiconductor oxide layer is removed to leave an interfacial layer of semiconductor oxide layer on the semiconductor substrate; depositing a layer of high dielectric constant material over the interfacial layer; forming a gate electrode over the layer of high dielectric constant material; and forming a source and a drain in the semiconductor substrate and adjacent to the gate electrode.
Claim 22
Dependent Claim
20 words
The method of claim 17 , wherein the semiconductor substrate is silicon and the semiconductor oxide layer is silicon oxide.
Claim 23
Dependent Claim
29 words
The method of claim 18 , wherein the first gas comprises a gas selected from CHF 3 and CF 4 , and the second gas comprises O 2 .
Claim 24
Dependent Claim
22 words
The method of claim 18 , wherein the first gas is CHF 3 , and the second gas is CF 4 .
Claim 25
Dependent Claim
20 words
The method of claim 18 , wherein the silicon oxide is formed at temperature of at least 850 degrees Celsius.
Claim 26
Dependent Claim
25 words
The method of claim 18 , wherein introducing the first gas, purging, and introducing the second gas are performed at temperatures below 200 degrees Celsius.
Claim 27
Dependent Claim
18 words
The method of claim 18 , wherein purging is performed by flowing a non-reactive gas over the substrate.
Claim 28
Independent Claim
174 words
A method of forming a transistor, comprising: providing a semiconductor substrate; providing a reaction chamber, forming a semiconductor oxide layer on the substrate, wherein the semiconductor oxide layer comprises a plurality of monolayers; inserting the semiconductor substrate with the semiconductor oxide layer into the reaction chamber; after inserting the semiconductor substrate into the reaction chamber, introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; after purging the reaction chamber, introducing a second gas into the reaction chamber to cause the etching of a first monolayer of the plurality of monolayers; repeating introducing the first gas, purging, and introducing the second gas until a desired amount of the semiconductor oxide layer is removed to leave an interfacial layer of semiconductor oxide layer on the semiconductor surface; depositing a layer of high dielectric constant material over the interfacial layer; forming a gate electrode over the layer of high dielectric constant material; and forming a source and a drain adjacent in the semiconductor substrate and adjacent to the gate electrode.
Claim 29
Independent Claim
174 words
A method of forming a transistor, comprising: providing a semiconductor substrate; providing a reaction chamber, forming a semiconductor oxide layer on the substrate, wherein the semiconductor oxide layer comprises a plurality of monolayers; inserting the semiconductor substrate with the semiconductor oxide layer into the reaction chamber; after inserting the semiconductor substrate into the reaction chamber, introducing a first gas into the reaction chamber; purging the reaction chamber of the first gas; after purging the reaction chamber, introducing a second gas into the reaction chamber to cause the etching of a first monolayer of the plurality of monolayers; repeating introducing the first gas, purging, and introducing the second gas until a desired amount of the semiconductor oxide layer is removed to leave an interfacial layer of semiconductor oxide layer on the semiconductor surface; depositing a layer of high dielectric constant material over the interfacial layer; forming a gate electrode over the layer of high dielectric constant material; and forming a source and a drain adjacent in the semiconductor substrate and adjacent to the gate electrode.
Claim 30
Dependent Claim
20 words
The method of claim 24 , wherein the semiconductor substrate is silicon and the semiconductor oxide layer is silicon oxide.
Claim 31
Dependent Claim
20 words
The method of claim 25 , wherein the first gas is selected from HF and CCl 2 F 2 .
Claim 32
Dependent Claim
14 words
The method of claim 25 , wherein the heating is by rapid thermal annealing.
Claim 33
Dependent Claim
21 words
The method of claim 25 , wherein the silicon oxide layer is formed at temperature of at least 850 degrees Celsius.
Claim 34
Dependent Claim
25 words
The method of claim 25 , wherein introducing the first gas, purging, and heating the second gas are performed at temperatures below 200 degrees Celsius.
Claim 35
Dependent Claim
18 words
The method of claim 25 , wherein purging is performed by flowing a non-reactive gas over the substrate.
Claim 36
Dependent Claim
13 words
The method of claim 25 , wherein the silicon oxide layer is doped.
Claim 37
Dependent Claim
15 words
The method of claim 31 , wherein the silicon oxide layer is doped with nitrogen.
Claim 38
Independent Claim
97 words
A method for semiconductor processing, comprising: providing a semiconductor substrate having a silicon oxide layer over the substrate, wherein the silicon oxide layer comprises a plurality of monolayers; providing a reaction chamber; inserting the semiconductor substrate into the reaction chamber; introducing a first gas into the reaction chamber to form a reaction layer on the silicon oxide; purging the reaction chamber of the first gas; activating the reaction layer to remove a first monolayer of the plurality of monolayers; and repeating introducing, purging, and activating until a desired portion of the silicon oxide layer has been removed.
Claim 39
Independent Claim
97 words
A method for semiconductor processing, comprising: providing a semiconductor substrate having a silicon oxide layer over the substrate, wherein the silicon oxide layer comprises a plurality of monolayers; providing a reaction chamber; inserting the semiconductor substrate into the reaction chamber; introducing a first gas into the reaction chamber to form a reaction layer on the silicon oxide; purging the reaction chamber of the first gas; activating the reaction layer to remove a first monolayer of the plurality of monolayers; and repeating introducing, purging, and activating until a desired portion of the silicon oxide layer has been removed.
Claim 40
Dependent Claim
15 words
The method of claim 33 wherein activating comprises introducing a second gas into the chamber.
Claim 41
Dependent Claim
32 words
The method of claim 34 further comprising depositing a layer of high dielectric constant material after repeating introducing purging, and activating until a predetermined portion of the silicon oxide layer is removed.
Claim 42
Dependent Claim
14 words
The method of claim 33 wherein activating comprises rapid thermal annealing the reaction layer.
Claim 43
Dependent Claim
32 words
The method of claim 36 further comprising depositing a layer of high dielectric constant material after repeating introducing purging, and activating until a predetermined portion of the silicon oxide layer is removed.
References Cited (Backward Citations)
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