Abstract The present invention relates to lithographic methods for forming a dual relief pattern in a substrate, and the application of such methods to fabricating multilevel interconnect structures in semiconductor chips by a Dual Damascene process in which dual relief cavities formed in a dielectric are filled with conductive material to form the wiring and via levels. The invention comprises a twice patterned single mask layer Dual Damascene process modified by the addition of an easy-to-integrate sidewall liner to protect organic interlevel and intralevel dielectrics from potential damage induced by photoresist stripping steps during lithographic rework. The invention further comprises a method for forming a dual pattern hard mask which may be used to form dual relief cavities for use in Dual Damascene processing, said dual pattern hard mask comprising a first set of one or more layers with a first pattern, and a second set of one or more layers with a second pattern.
A patterning method utilizing a dual pattern hard mask comprising a first set of one or more mask layer with a first pattern, and a second set of one or more mask layer with a second pattern, wherein mask layer materials of said first set include materials selected from the group consisting of SiCOH compounds and Sic-based dielectrics.
Claim 2
Dependent Claim
58 words
A patterning method utilizing a dual pattern hard mask comprising a first set of one or more mask layer with a first pattern, and a second set of one or more mask layer with a second pattern, wherein mask layer materials of said first set include materials selected from the group consisting of SiCOH compounds and Sic-based dielectrics.
Claim 3
Dependent Claim
27 words
The patterning method of claim 1 wherein mask layer materials of said second set include materials selected from the group consisting of SiCOH compounds and SiC-based dielectrics.
Claim 4
Dependent Claim
18 words
The patterning method of claim 1 wherein mask layer materials of said first and second sets are different.
Claim 5
Dependent Claim
19 words
The patterning method of claim 1 wherein mask layer materials of said first and second sets are the same.
Claim 6
Dependent Claim
23 words
The patterning method of claim 1 wherein at least one set of mask layer is formed by sequential deposition of each constituent layer.