US6103632A
Expired / Lapsed
US
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In situ Etching of inorganic dielectric anti-reflective coating from a substrate
Assignee: Applied Materials Inc
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Filing: 1997-10-22
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Granted: 2000-08-15
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Expires: 2017-10-22
Abstract
Abstract The present invention is embodied in a method and apparatus for etching dielectric layers and inorganic ARC's without the need for removing the substrate being processed from the processing chamber and without the need for intervening processing steps such as chamber cleaning operations (in situ process). A layer and/or a multi-layer film deposited on a substrate, such as silicon, is located within a processing chamber. The substrate has a base, an underlying layer above the base, an overlying layer above the underlying layer, and a top dielectric anti-reflective coating (DARC) layer formed on the overlying layer. In the preferred method, first, the DARC layer and the overlying layer is etched by a first process gas. Next, the underlying layer is etched by a second process gas.
Inventors
- 👤 Ajay Kumar
- 👤 Jeffrey D. Chinn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:11
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
166 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to etch a first layer of said substrate, said first set of process gases comprising a gas from the group consisting of helium-containing gas and oxygen-containing gas, wherein said first set of process gases is comprised of a CF4+He:O2 gas composition, said first layer of said substrate comprising a dielectric antireflective material; (b) introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, said third layer comprising polysilicon.
Claim 2
Dependent Claim
166 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to etch a first layer of said substrate, said first set of process gases comprising a gas from the group consisting of helium-containing gas and oxygen-containing gas, wherein said first set of process gases is comprised of a CF4+He:O2 gas composition, said first layer of said substrate comprising a dielectric antireflective material; (b) introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, said third layer comprising polysilicon.
Claim 3
Dependent Claim
189 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to etch a first layer of said substrate, said first set of process gases comprising a gas from the group consisting of helium-containing gas and oxygen-containing gas, said first layer of said substrate comprising a dielectric antireflective material; (b) introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, wherein said second process gases comprise a gas compound selected from the group consisting of compounds containing both S and F and a gas compound selected from the group consisting of compounds containing both H and Br, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, said third layer comprising polysilicon.
Claim 4
Dependent Claim
189 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to etch a first layer of said substrate, said first set of process gases comprising a gas from the group consisting of helium-containing gas and oxygen-containing gas, said first layer of said substrate comprising a dielectric antireflective material; (b) introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, wherein said second process gases comprise a gas compound selected from the group consisting of compounds containing both S and F and a gas compound selected from the group consisting of compounds containing both H and Br, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, said third layer comprising polysilicon.
Claim 5
Dependent Claim
22 words
The invention as set forth in claim 2, wherein said third process gases is comprised of a SF 6 +HBr gas composition.
Claim 6
Dependent Claim
177 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to etch a first layer of said substrate, said first set of process gases comprising a gas from the group consisting of helium-containing gas and oxygen-containing gas, said first layer of said substrate comprising a dielectric antireflective material; (b) introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, wherein said third process gases comprise a chlorine-containing gas and a gas compound selected from the group consisting of compounds containing both H and Br, said third layer comprising polysilicon.
Claim 7
Dependent Claim
177 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to etch a first layer of said substrate, said first set of process gases comprising a gas from the group consisting of helium-containing gas and oxygen-containing gas, said first layer of said substrate comprising a dielectric antireflective material; (b) introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, wherein said third process gases comprise a chlorine-containing gas and a gas compound selected from the group consisting of compounds containing both H and Br, said third layer comprising polysilicon.
Claim 8
Dependent Claim
21 words
The invention as set forth in claim 4, wherein said third process gases is comprised of a HBr+Cl 2 gas composition.
Claim 9
Dependent Claim
250 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to each a first layer of said substrate, said first set of process gases comprising a gas from the group of consisting of helium-containing gas and oxygen-containing gas, said first layer of said substrate comprising a dielectric antireflective material, wherein said substrate further comprises a top overlying layer, wherein said first process gases cause said first layer to possess a high etch selectivity ratio with respect to said top overlying layer, wherein overetching off said top overlying layer is prevented, wherein said etch selectivity ratio of said first layer to said top overlying layer is on the order of 3:1, wherein said first period of time is sufficient to etch a thickness on the order of 300 Å of said first layer and a thickness on the order of 100 Å of said top overlying layer; (b) Introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, said third layer comprising polysilicon.
Claim 10
Dependent Claim
250 words
A process for etching a multi-layer film of a substrate disposed within a processing chamber, said process comprising the steps of: (a) introducing a first set of process gases into an etching zone of said chamber for a first period of time sufficient to each a first layer of said substrate, said first set of process gases comprising a gas from the group of consisting of helium-containing gas and oxygen-containing gas, said first layer of said substrate comprising a dielectric antireflective material, wherein said substrate further comprises a top overlying layer, wherein said first process gases cause said first layer to possess a high etch selectivity ratio with respect to said top overlying layer, wherein overetching off said top overlying layer is prevented, wherein said etch selectivity ratio of said first layer to said top overlying layer is on the order of 3:1, wherein said first period of time is sufficient to etch a thickness on the order of 300 Å of said first layer and a thickness on the order of 100 Å of said top overlying layer; (b) Introducing a second set of process gases into said etching zone of said chamber for a second period of time sufficient to etch a second layer of said substrate, said second layer comprising silicide; and (c) introducing a third set of process gases into said etching zone of said chamber for a third period of time sufficient to etch a third layer of said substrate, said third layer comprising polysilicon.
Claim 11
Independent Claim
141 words
A method for processing a substrate having a photoresist pattern deposited thereon, said method comprising the steps of: (a) placing into a chamber said substrate, wherein said substrate being a silicon-containing substrate having a multi-layer film deposited thereon, said multi-layer film comprising an inorganic dielectric antireflective material, an intermediate layer and an underlying layer; (b) introducing into said chamber a first process gas comprising NF 3 +Cl 2 ; (c) generating a plasma of the first process gas in said chamber to etch through portions of the dielectric antireflective material and through portions of the intermediate layer not covered by the photoresist pattern; (d) introducing into said chamber a second gas comprising HBr+Cl 2 ; and (e) generating a plasma of the second process gas in said chamber to etch portions of the underlying layer not covered by the photoresist pattern.
Claim 12
Independent Claim
141 words
A method for processing a substrate having a photoresist pattern deposited thereon, said method comprising the steps of: (a) placing into a chamber said substrate, wherein said substrate being a silicon-containing substrate having a multi-layer film deposited thereon, said multi-layer film comprising an inorganic dielectric antireflective material, an intermediate layer and an underlying layer; (b) introducing into said chamber a first process gas comprising NF 3 +Cl 2 ; (c) generating a plasma of the first process gas in said chamber to etch through portions of the dielectric antireflective material and through portions of the intermediate layer not covered by the photoresist pattern; (d) introducing into said chamber a second gas comprising HBr+Cl 2 ; and (e) generating a plasma of the second process gas in said chamber to etch portions of the underlying layer not covered by the photoresist pattern.
Claim 13
Dependent Claim
14 words
The invention as set forth in claim 7, wherein said silicide is tungsten silicide.
Claim 14
Dependent Claim
22 words
The invention as set forth in claim 7, wherein steps (a) and (e) are performed in situ and without intervening processing steps.
Claim 15
Dependent Claim
39 words
The invention as set forth in claim 7, wherein said first process gas causes said dielectric antireflective layer to possess a high etch selectivity ratio with respect to said photoresist pattern, wherein overetching of said photoresist pattern is prevented.
Claim 16
Dependent Claim
28 words
The invention as set forth in claim 10, wherein said etch selectivity ratio of said dielectric antireflective layer to said photoresist pattern is on the order of 3:1.
Claim 17
Independent Claim
165 words
A method for processing a substrate having a photoresist pattern deposited thereon, said method comprising the steps of: (a) placing into a chamber said substrate, wherein said substrate being a silicon-containing substrate having a multi-layer film deposited thereon, said multi-layer film comprising an inorganic dielectric antireflective material, an intermediate layer and an underlying layer; (b) introducing into said chamber a first process gas comprising CF 4 +He:O 2 ; (c) generating a plasma of the first process gas in said chamber to etch the dielectric antireflective material not covered by the photoresist pattern; (d) introducing into said chamber a second process gas comprising a SF_hd 6+HBr; (e) generating a plasma of the second process gas in said chamber to etch the intermediate layer not covered by the photoresist pattern; (f) introducing into said chamber a third process gas comprising HBr+Cl 2 ; (g) generating a plasma of the third process gas in said chamber to etch the underlying layer not covered by the photoresist pattern.
Claim 18
Independent Claim
165 words
A method for processing a substrate having a photoresist pattern deposited thereon, said method comprising the steps of: (a) placing into a chamber said substrate, wherein said substrate being a silicon-containing substrate having a multi-layer film deposited thereon, said multi-layer film comprising an inorganic dielectric antireflective material, an intermediate layer and an underlying layer; (b) introducing into said chamber a first process gas comprising CF 4 +He:O 2 ; (c) generating a plasma of the first process gas in said chamber to etch the dielectric antireflective material not covered by the photoresist pattern; (d) introducing into said chamber a second process gas comprising a SF_hd 6+HBr; (e) generating a plasma of the second process gas in said chamber to etch the intermediate layer not covered by the photoresist pattern; (f) introducing into said chamber a third process gas comprising HBr+Cl 2 ; (g) generating a plasma of the third process gas in said chamber to etch the underlying layer not covered by the photoresist pattern.
Claim 19
Dependent Claim
14 words
The invention as set forth in claim 12, wherein said silicide is tungsten silicide.
Claim 20
Dependent Claim
22 words
The invention as set forth in claim 12, wherein steps (a) and (g) are performed in situ and without intervening processing steps.
Claim 21
Dependent Claim
39 words
The invention as set forth in claim 12, wherein said first process gas causes said dielectric antireflective layer to possess a high etch selectivity ratio with respect to said photoresist pattern, wherein overetching of said photoresist pattern is prevented.
Claim 22
Dependent Claim
28 words
The invention as set forth in claim 15, wherein said etch selectivity ratio of said dielectric antireflective layer to said photoresist pattern is on the order of 3:1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-15 | 2004-02-14 | 2004-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-15 | 2008-02-14 | 2008-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-15 | 2012-02-14 | 2012-08-15 | $7700.00 | Window Closed / Lapsed |