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US6437392B1
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Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same
Assignee: Nokia of America Corp
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Filing: 1999-12-08
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Granted: 2002-08-20
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Expires: 2019-12-08
Abstract
Abstract The invention relates to dielectric materials comprising films of R—Ge—Ti—O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula R x —Ge y —Ti z —O w where 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, and 1≧w≦2, and x+y+z≅1, and more preferably, where 0.15≧x≦0.7, 0.05≧y≦0.3, 0.25≧z≦0.7, and 1.95≧w≦2.05, and x+y+z≅1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.
Inventors
- 👤 Lynn Frances Schneemeyer
- 👤 Robert Bruce van Dover
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10B; H10B12/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/691; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10B12/01; H10B12/02; H10B12/03; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6339; H10P14/6939; H10P14/69392; H10P14/69394; H10P14/69395; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
94 words
An article including a film of dielectric material having the formula R x —Ge y —Ti z —O w wherein R is selected from the group consisting of zirconium and hafnium and 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, 1≧w≦2 and x+y+z≅1, in which the values for x, y, z and w are selected so that the dielectric constant of the dielectric material is greater than about 40, the leakage current is less than 10 −6 A/cm 2 measured at a field of 1 MV/cm, and the figure of merit is greater than about 18 μC/cm 2 .
Claim 2
Dependent Claim
94 words
An article including a film of dielectric material having the formula R x —Ge y —Ti z —O w wherein R is selected from the group consisting of zirconium and hafnium and 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, 1≧w≦2 and x+y+z≅1, in which the values for x, y, z and w are selected so that the dielectric constant of the dielectric material is greater than about 40, the leakage current is less than 10 −6 A/cm 2 measured at a field of 1 MV/cm, and the figure of merit is greater than about 18 μC/cm 2 .
Claim 3
Dependent Claim
14 words
The article of claim 1 , wherein the dielectric material comprises an amorphous composition.
Claim 4
Dependent Claim
23 words
The article of claim 1 in which the dielectric material has the formula R 0.3 —Ge 0.1 —Ti 0.6 —O w and 1≧w≦2.
Claim 5
Dependent Claim
14 words
The article of claim 1 in which 0.15≧x≦0.7, 0.05≧y≦0.3, 0.25≧z≦0.7, and 1.95≧w≦2.05, and x+y+z≅1.
Claim 6
Dependent Claim
16 words
The article of claim 1 in which R is zirconium and 0.15≧x≦0.5, 0.05≧y≦0.25, 0.5≧z≦0.6, and 1.95≧w≦2.05.
Claim 7
Dependent Claim
16 words
The article of claim 1 in which R is hafnium and 0.15≧x≦0.7, 0.05≧y≦0.3, 0.25≧z≦0.7, and 1.95≧w≦2.05.
Claim 8
Dependent Claim
17 words
The article of claim 1 in which the film of dielectric material is prepared by off-axis sputtering.
Claim 9
Dependent Claim
24 words
The article of claim 1 , comprising a capacitor having a pair of electrodes with the film of dielectric material disposed between the electrodes.
Claim 10
Dependent Claim
23 words
The article of claim 1 , comprising a MOSFET device with the film of dielectric material comprising a gate dielectric for the MOSFET.
Claim 11
Dependent Claim
18 words
The article of claim 1 , comprising a memory device having a field effect transistor and a capacitor.
Claim 12
Dependent Claim
10 words
The article of claim 10 , comprising a DRAM device.
Claim 13
Dependent Claim
65 words
A memory device having a field effect transistor and a capacitor, in which the field effect transistor has a gate dielectric and the capacitor comprises a pair of electrodes and disposed between the electrodes a layer of dielectric material, in which at least one of the gate dielectric or the layer of dielectric material comprises the film of dielectric material according to claim 1 .
Claim 14
Dependent Claim
32 words
A capacitor comprising a pair of electrodes and disposed between the electrodes a layer of dielectric material, in which the layer of dielectric material comprises the film according to claim 1 .
Claim 15
Dependent Claim
64 words
An article including a film of dielectric material having the formula R x —Ge y —Ti z —O w wherein R is selected from the group consisting of zirconium and hafnium and 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, 1≧w≦2 and x+y+z≅1, in which the dielectric material is doped with less than 5 atomic percent of cations or anions to compensate for oxygen traps in the deposited oxide.
Claim 16
Dependent Claim
64 words
An article including a film of dielectric material having the formula R x —Ge y —Ti z —O w wherein R is selected from the group consisting of zirconium and hafnium and 0.05≧x≦1, 0.05≧y≦1, 0.1≧z≦1, 1≧w≦2 and x+y+z≅1, in which the dielectric material is doped with less than 5 atomic percent of cations or anions to compensate for oxygen traps in the deposited oxide.
Claim 17
Dependent Claim
24 words
The article of claim 14 in which the dopants are selected from the group consisting of N, F, Mg, Ca, Sr, Y and Al.
References Cited (Backward Citations)
US5112700A
Cited
US5821005A
Cited
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