US6429468B1
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In0.34A10.66AsSb0.15/InP HFET utilizing InP channels
Assignee: National Science and Technology Council
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Filing: 2001-05-22
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Granted: 2002-08-06
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Expires: 2021-05-22
Abstract
Abstract A double delta-doped In0.34 Al0.66As0.85 Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 muA/mm at Vgs=-40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V,respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The gds is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled delta-doped structure, InP channel, In0.34 Al0.66As0.85 Sb0.15 Schottky layer'and to the large conduction-band discontinuity(DELTAEc) at the InAlAsSb/InP heterojunction.
Inventors
- 👤 Wei-Chou Hsu
- 👤 Yu-Shyan Lin
- 👤 Chia-Yen Yeh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/4738; H10D30/4735
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
115 words
The structure of coupled δ-IaP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), comprising: Non-doping InP buffer layer grown on semi-insolating Inp substrate; δ 2 -n 30 Inp doping layer grown on the Nondoping InP buffer layer; Non-doping InP space layer formed on the δ 2 -n + Inp doping layer; δ-n + Inp doping layer grown on the Non-doping InP space layer; Non-doping InP layer grown on the δ-n + Inp doping layer; Non-doping InAlAsSb Schottky layer grown on Non-doping InP layer; Non-doping InGaAs obstructive layer grown on the Non-doping InAlAsSb Schottky layer; and the n 30 -Inp covering layer finally formed on the Non-doping InGaAs obstructive layer.
Claim 2
Dependent Claim
115 words
The structure of coupled δ-IaP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), comprising: Non-doping InP buffer layer grown on semi-insolating Inp substrate; δ 2 -n 30 Inp doping layer grown on the Nondoping InP buffer layer; Non-doping InP space layer formed on the δ 2 -n + Inp doping layer; δ-n + Inp doping layer grown on the Non-doping InP space layer; Non-doping InP layer grown on the δ-n + Inp doping layer; Non-doping InAlAsSb Schottky layer grown on Non-doping InP layer; Non-doping InGaAs obstructive layer grown on the Non-doping InAlAsSb Schottky layer; and the n 30 -Inp covering layer finally formed on the Non-doping InGaAs obstructive layer.
Claim 3
Dependent Claim
35 words
A coupled δ-InP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), according the claim 1 , thickness of the growth buffer layer in the heterogeneous structure transistor is 0.5˜1£gm.
Claim 4
Dependent Claim
32 words
A coupled δ-InP channel In 0.34 Al 0.66 AS 0.85 Sb 0.15 /P heterostructure field-effect transistor (HFET), according the claim 1 , thickness of the undoped MnP space layer is 80˜110 Å.
Claim 5
Dependent Claim
31 words
A coupled δ-InP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), according the claim 1 , thickness of the undoped InP layer is 90˜150 Å.
Claim 6
Dependent Claim
39 words
A coupled δ-InP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), according the claim 1 , thickness of the undoped In 0.34 Al 0.34 As 0.85 Sb 0.15 Schottky layer is 200˜500 Å.
Claim 7
Dependent Claim
31 words
A coupled δ-InP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), according the claim 1 , thickness of the InGaks obstructive layer is 50˜110 Å.
Claim 8
Dependent Claim
33 words
A coupled δ-InP channel In 0.34 Al 0.66 As 0.85 Sb 0.15 /InP heterostructure field-effect transistor (HFET), according the claim 1 , thickness of the n + -InP covering layer is 200˜500 Å.
References Cited (Backward Citations)
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