Patent US6426512B1 successfully refreshed from Google Patents.
US6426512B1
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Group III nitride compound semiconductor device
Assignee: Toyoda Gosei Co Ltd
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Filing: 2000-03-03
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Granted: 2002-07-30
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Expires: 2020-03-03
Abstract
Abstract An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
Inventors
- 👤 Jun Ito
- 👤 Toshiaki Chiyo
- 👤 Naoki Shibata
- 👤 Hiroshi Watanabe
- 👤 Shizuyo Asami
- 👤 Shinya Asami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/0137
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
46 words
A semiconductor device, comprising: a substrate; an undercoat layer formed on said substrate and containing metal nitride; a group III nitride compound semiconductor layer formed on said undercoat layer; and a titanium layer interposed between said undercoat layer and said group III nitride compound semiconductor layer.
Claim 2
Dependent Claim
46 words
A semiconductor device, comprising: a substrate; an undercoat layer formed on said substrate and containing metal nitride; a group III nitride compound semiconductor layer formed on said undercoat layer; and a titanium layer interposed between said undercoat layer and said group III nitride compound semiconductor layer.
Claim 3
Dependent Claim
66 words
A semiconductor device, comprising: a substrate; an undercoat layer formed on said substrate and containing metal nitride; and a group III nitride compound semiconductor layer formed on said undercoat layer, wherein said undercoat layer includes a titanium layer formed on said substrate, and a heat-resisting layer interposed between said substrate and said titanium layer to thermally insulate said substrate and said titanium layer from each other.
Claim 4
Dependent Claim
66 words
A semiconductor device, comprising: a substrate; an undercoat layer formed on said substrate and containing metal nitride; and a group III nitride compound semiconductor layer formed on said undercoat layer, wherein said undercoat layer includes a titanium layer formed on said substrate, and a heat-resisting layer interposed between said substrate and said titanium layer to thermally insulate said substrate and said titanium layer from each other.
Claim 5
Dependent Claim
33 words
A semiconductor device according to claim 2 , wherein said substrate is formed of one member selected from the group consisting of sapphire, silicone carbide, gallium nitride, silicone, gallium phosphide, and gallium arsenide.
Claim 6
Dependent Claim
22 words
A semiconductor device according to claim 2 , wherein said heat-resisting layer is formed of one of high-melting metal and metal nitride.
Claim 7
Dependent Claim
37 words
A semiconductor device according to claim 3 , wherein: said high-melting metal is one of Ta and Mo; and said metal nitride is one member selected from the group consisting of TiN, ZrN, HfN, and tantalum nitride.
Claim 8
Dependent Claim
21 words
A semiconductor device according to claim 2 , wherein said heat-resisting layer is formed on a (111) face of said substrate.
Claim 9
Dependent Claim
26 words
A semiconductor device according to claim 2 , wherein said titanium layer and said heat-resisting layer are laminated repetitively so as to alternate with each other.
Claim 10
Dependent Claim
23 words
A semiconductor device according to claim 7 , wherein each of said titanium layers has a thickness of from 10 to 250 Å.
Claim 11
Dependent Claim
34 words
A semiconductor device according to claim 7 , wherein each of said heat-resisting layers has a melting point substantially higher than the temperature for the formation of said group III nitride compound semiconductor layer.
Claim 12
Dependent Claim
18 words
A semiconductor device according to claim 2 , further comprising a first electrode provided on said undercoat layer.
Claim 13
Dependent Claim
40 words
A semiconductor device according to claim 9 , wherein shape of said device is square in plan view; and said first electrode is provided so as to be put between two sides constituting a corner portion of said square device.
Claim 14
Dependent Claim
22 words
A semiconductor device according to claim 9 , further comprising a second electrode connected onto said group III nitride compound semiconductor layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-07-29 | 2006-01-28 | 2006-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-29 | 2010-01-28 | 2010-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-29 | 2014-01-28 | 2014-07-30 | $7700.00 | Window Closed / Lapsed |