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US6426264B1
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Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device
Assignee: Sony Corp
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Filing: 2000-01-14
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Granted: 2002-07-30
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Expires: 2020-01-14
Abstract
Abstract A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for an etchant is formed in the side of these layers sandwiching an anti-growing film composed of SiO 2 . Thus, the etchant flows through the flow-through hole, the anti-growing film and the separating layer are etched, and the base substrate is easily isolated.
Inventors
- 👤 Hiroji Kawai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10D; H10D30/00; H10D30/01; H10D30/015; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10P14/24; H10P14/27; H10P14/271; H10P14/272; H10P14/276; H10P14/278; H10P14/32; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3442; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0213; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H10D62/85; H10D62/8503; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/018; H10H20/80; H10H20/81; H10H20/819
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
76 words
A method of manufacturing a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; and forming a flow through hole in said separating layer between said base substrate and said semiconductor crystal layer for flowing therethrough an etchant for etching the separating layer.
Claim 2
Independent Claim
76 words
A method of manufacturing a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; and forming a flow through hole in said separating layer between said base substrate and said semiconductor crystal layer for flowing therethrough an etchant for etching the separating layer.
Claim 3
Dependent Claim
32 words
A method of manufacturing a semiconductor laminated substrate according to claim 1 , wherein the base substrate is formed by sapphire, silicon, spinel, neodymium gallate, lithium gallate, lithium aluminate or silicon oxide.
Claim 4
Dependent Claim
165 words
A method of manufacturing a semiconductor laminated substrate according to claim 1 , wherein the semiconductor crystal layer is formed by a III-V nitride semiconductor containing at least one kind of element in a group of III elements consisting of gallium (Ga), aluminum (Al), boron (B) and indium (In) and at least nitrogen in a group of V elements consisting of nitrogen (N), phosphorus (P) and arsenic (As), and the separating layer is formed by at least either a III-V compound semiconductor containing at least one kind of element in the group of III elements and at least one kind of element in the group of V elements or a II-VI compound semiconductor containing at least one kind of element in a group of II elements consisting of zinc (Zn), magnesium (Mg), beryllium (Be), cadmium (Cd), manganese (Mn) and mercury (Hg) and at least one kind of element in a group of VI elements consisting of oxygen (O), sulfur (S), selenium (Se) and tellurium (Te).
Claim 5
Dependent Claim
21 words
A method of manufacturing a semiconductor laminated substrate according to claim 1 , comprising the step of forming the separating layer.
Claim 6
Dependent Claim
33 words
A method of manufacturing a semiconductor laminated substrate according to claim 4 , wherein the anti-growing film is formed by at least one of silicon oxide, silicon nitride, aluminum oxide, tungsten and molybdenum.
Claim 7
Dependent Claim
26 words
A method of manufacturing a semiconductor laminated substrate according to claim 1 , wherein the separating layers are distributed in the form of lines or islands.
Claim 8
Dependent Claim
31 words
A method of manufacturing a semiconductor laminated substrate according to claim 1 , further comprising the step of: forming a buffer layer between the separating layer and the semiconductor crystal layer.
Claim 9
Dependent Claim
50 words
A method of manufacturing a semiconductor laminated substrate according to claim 7 , wherein the buffer layer is formed by the III-V compound semiconductor containing at least one kind of element in the group of III elements and at least one kind of element in the group of V elements.
Claim 10
Dependent Claim
41 words
A method of manufacturing a semiconductor laminated substrate according to claim 7 , further comprising the step of: forming said anti-growing film further on at least a part of the side surface of the buffer layer and forming the flow-through hole.
Claim 11
Dependent Claim
35 words
A method of manufacturing a semiconductor laminated substrate according to claim 7 , further comprising the step of: forming said anti-growing film further on a part between the buffer layer and the semiconductor crystal layer.
Claim 12
Independent Claim
90 words
A method of manufacturing a semiconductor crystal substrate in a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer and having a flow-through hole for flowing therethrough an etchant for etching the separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; and etching the separating layer by flowing the etchant through the flow-through hole, thereby isolating the semiconductor crystal layer from the base substrate.
Claim 13
Independent Claim
90 words
A method of manufacturing a semiconductor crystal substrate in a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer and having a flow-through hole for flowing therethrough an etchant for etching the separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; and etching the separating layer by flowing the etchant through the flow-through hole, thereby isolating the semiconductor crystal layer from the base substrate.
Claim 14
Dependent Claim
40 words
A method of manufacturing a semiconductor crystal substrate according to claim 11 , wherein for isolating the semiconductor crystal layer from the base substrate, the etchant is allowed to flow through the flow-through hole after a reduced-pressure atmosphere is provided.
Claim 15
Independent Claim
79 words
A method of manufacturing a semiconductor device, using a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; forming a flow-through hole in said separating layer for flowing therethrough an etchant for etching the separating layer; and making a semiconductor device with said semiconductor laminated substrate.
Claim 16
Independent Claim
79 words
A method of manufacturing a semiconductor device, using a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; forming a flow-through hole in said separating layer for flowing therethrough an etchant for etching the separating layer; and making a semiconductor device with said semiconductor laminated substrate.
Claim 17
Independent Claim
93 words
A method of manufacturing a semiconductor device using a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer and having a flow-through hole for flowing therethrough an etchant for etching the separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; etching the separating layer by flowing the etchant through the flow-through hole, thereby isolating the base substrate; and making a semiconductor device with said semiconductor laminated substrate.
Claim 18
Independent Claim
93 words
A method of manufacturing a semiconductor device using a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer and having a flow-through hole for flowing therethrough an etchant for etching the separating layer, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; etching the separating layer by flowing the etchant through the flow-through hole, thereby isolating the base substrate; and making a semiconductor device with said semiconductor laminated substrate.
Claim 19
Dependent Claim
34 words
A method of manufacturing a semiconductor device according to claim 14 , wherein for isolating the base substrate, the etchant is allowed to flow through the flow-through hole after a reduced-pressure atmosphere is provided.
Claim 20
Independent Claim
106 words
A method of manufacturing a semiconductor device in a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer and having a flow-through hole for flowing therethrough an etchant for etching the separating layer, using a semiconductor crystal substrate formed by etching the separating layer by flowing the etchant through the flow-through hole and thereby isolating the semiconductor crystal layer from the base substrate, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; and making a semiconductor device with said semiconductor laminated substrate.
Claim 21
Independent Claim
106 words
A method of manufacturing a semiconductor device in a semiconductor laminated substrate having a base substrate and a semiconductor crystal layer formed on the base substrate sandwiching a separating layer and having a flow-through hole for flowing therethrough an etchant for etching the separating layer, using a semiconductor crystal substrate formed by etching the separating layer by flowing the etchant through the flow-through hole and thereby isolating the semiconductor crystal layer from the base substrate, comprising the steps of: forming an anti-growing film on at least a part of a side surface of said separating layer; and making a semiconductor device with said semiconductor laminated substrate.
Claim 22
Dependent Claim
30 words
A method of manufacturing a semiconductor device according to claim 16 , wherein said semiconductor crystal substrate has a pair of facing surfaces, one of which has protrusions or depressions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-07-29 | 2006-01-28 | 2006-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-29 | 2010-01-28 | 2010-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-29 | 2014-01-28 | 2014-07-30 | $7700.00 | Window Closed / Lapsed |