Patent US4250657A successfully refreshed from Google Patents.
Patent US6424004B2 successfully refreshed from Google Patents.
US6424004B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having quantum dots
Assignee: SK Hynix Inc
•
Filing: 2000-12-14
•
Granted: 2002-07-23
•
Expires: 2020-12-14
Abstract
Abstract A method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the first insulating layer, forming a second insulating layer on the conductive layer, and annealing the conductive layer between the first, and second insulating layers to agglomerate the conductive layer.
Inventors
- 👤 Ki Bum Kim
- 👤 Tae Sik Yoon
- 👤 Jang Yeon Kwon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:28
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; B; B82; B82Y; B82Y10/00; B82Y30/00; H10D30/00; H10D30/01; H10D30/014; H10D30/40; H10D30/402; H10D62/00; H10D62/10; H10D62/117; H10D62/118; H10D62/80; H10D62/81; H10D62/812; H10D62/814; G; G11; G11C; G11C2216/00; G11C2216/02; G11C2216/08; H10D62/85; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/773; Y10S977/774; Y10S977/84; Y10S977/89; Y10S977/895; Y10S977/902; Y10S977/932; Y10S977/936; Y10S977/937
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
150 words
A semiconductor device having at least one quantum dot, comprising: a silicon oxide insulating layer positioned on a substrate; and a quantum dot positioned on the silicon oxide insulated layer, where the quantum dot is fabricated from a conductive layer positioned on the insulating layer that is agglomerated through an annealing process, said quantum dot is fabricated from at least one of an alloy (Si 1−x metal x ) of Si and a material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, an alloy (Ge x−1 -metal x ] of Ge and said material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, and an alloy (metal 1−x -metal x ) of said material, said alloy (Si 1−x metal x ) of Si, and said alloy (Ge x−1 -metal x ] of Ge, where 0<x<l1.
Claim 2
Dependent Claim
150 words
A semiconductor device having at least one quantum dot, comprising: a silicon oxide insulating layer positioned on a substrate; and a quantum dot positioned on the silicon oxide insulated layer, where the quantum dot is fabricated from a conductive layer positioned on the insulating layer that is agglomerated through an annealing process, said quantum dot is fabricated from at least one of an alloy (Si 1−x metal x ) of Si and a material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, an alloy (Ge x−1 -metal x ] of Ge and said material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, and an alloy (metal 1−x -metal x ) of said material, said alloy (Si 1−x metal x ) of Si, and said alloy (Ge x−1 -metal x ] of Ge, where 0<x<l1.
Claim 3
Dependent Claim
146 words
A semiconductor device having at least one quantum dot, comprising: an insulating layer positioned on a substrate; and a quantum dot positioned on the insulated layer, wherein the quantum dot is fabricated from a conductive layer positioned on the insulating layer that is agglomerated through an annealing process, said quantum dot is fabricated from at least one of an alloy (Si 1−x -metal x ) of Si and a material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, an alloy (Ge x−1 -metal x ] of Ge and said material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, and an alloy (metal 1−x -metal x ) of said material, said alloy (Si 1−x metal x ) of Si, and said alloy (Ge x−1 -metal x ] of Ge, where 0<x<1.
Claim 4
Dependent Claim
146 words
A semiconductor device having at least one quantum dot, comprising: an insulating layer positioned on a substrate; and a quantum dot positioned on the insulated layer, wherein the quantum dot is fabricated from a conductive layer positioned on the insulating layer that is agglomerated through an annealing process, said quantum dot is fabricated from at least one of an alloy (Si 1−x -metal x ) of Si and a material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, an alloy (Ge x−1 -metal x ] of Ge and said material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, and an alloy (metal 1−x -metal x ) of said material, said alloy (Si 1−x metal x ) of Si, and said alloy (Ge x−1 -metal x ] of Ge, where 0<x<1.
Claim 5
Dependent Claim
21 words
The device claimed in claim 2 , wherein the annealing used to fabricate the quantum dot is conducted in a vacuum.
Claim 6
Dependent Claim
17 words
The device claimed in claim 2 , wherein the annealing is conducted in an N 2 ambient.
Claim 7
Dependent Claim
30 words
The device claimed in claim 2 , wherein a height of the quantum dot is no greater than a height of the conductive layer used to fabricate the quantum dot.
Claim 8
Dependent Claim
153 words
A semiconductor device having at least one quantum dot, comprising: a first insulating layer positioned on a substrate; at least one quantum dot positioned on the first insulating layer; and a second insulating layer positioned on the conductive layer, where the quantum dot is fabricated from a conductive layer that is agglomerated through an annealing process wherein the quantum dot is fabricated from at least one of an alloy (Si 1−x metal x ) of Si and a material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, an alloy (Ge x−1 -metal x ] of Ge and said material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, and an alloy (metal 1−x -metal,) of said material, said alloy (Si 1−x metal x ) of Si, and said alloy (Ge x−1 -metal x ] of Ge, where 0<x<1.
Claim 9
Dependent Claim
153 words
A semiconductor device having at least one quantum dot, comprising: a first insulating layer positioned on a substrate; at least one quantum dot positioned on the first insulating layer; and a second insulating layer positioned on the conductive layer, where the quantum dot is fabricated from a conductive layer that is agglomerated through an annealing process wherein the quantum dot is fabricated from at least one of an alloy (Si 1−x metal x ) of Si and a material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, an alloy (Ge x−1 -metal x ] of Ge and said material selected from Si, Ge, Si 1−x , Ge, Al, Au, Cu, Pt, Cr, Ru and Ta, and an alloy (metal 1−x -metal,) of said material, said alloy (Si 1−x metal x ) of Si, and said alloy (Ge x−1 -metal x ] of Ge, where 0<x<1.
Claim 10
Dependent Claim
23 words
The device claimed in claim 6 , wherein each of the first and second insulating layers are formed with a silicon oxide film.
Claim 11
Dependent Claim
21 words
The device claimed in claim 6 , wherein the annealing used to fabricate the quantum dot is conducted in a vacuum.
Claim 12
Dependent Claim
17 words
The device claimed in claim 6 , wherein the annealing is conducted in an N 2 ambient.
Claim 13
Dependent Claim
29 words
The device claimed in claim 6 , wherein the first insulating layer is a thermal oxidation film, and the second insulating layer is a chemical vapor deposition oxidation film.
Claim 14
Dependent Claim
39 words
The device claimed in claim 6 , wherein both the first and second insulating layers are fabricated from silicon oxide films, and the conductive layer used to fabricate the quantum dot is fabricated from Si 0.7 Ge 0.3 .
Claim 15
Dependent Claim
44 words
The device claimed in claim 6 , wherein the first insulating layer has a thickness of 440 to 550 Å, the conductive layer has a thickness of 20 to 50 Å, and the second insulating layer has a thickness of 100 to 150 Å.
Claim 16
Dependent Claim
85 words
The device claimed in claim 6 , wherein the first insulating layer is deposited with SiO 2 to a thickness of 440 to 550 Å at 440 to 550° C. by low pressure chemical vapor deposition, the conductive layer is deposited with Si 0.7 Ge 0.3 to a thickness of 20 to 50 Å at 300 to 450° C., and second insulating layer is deposited with chemical vapor deposition SiO 2 , to a thickness of 100 to 150 Å at 300 to 450° C.
Claim 17
Dependent Claim
30 words
The device claimed in claim 6 , wherein a height of the quantum dot is no greater than a height of the conductive layer used to fabricate the quantum dot.
Claim 18
Dependent Claim
24 words
The device claimed in claim 11 , further including a uniformed sized Si 0.7 Ge 0.3 quantum dot of between 3 to 4 nm.
Claim 19
Dependent Claim
21 words
The device claimed in claim 14 , wherein the quantum dot has an average size of between 36 to 49 Å.
References Cited (Backward Citations)
US5532184A
Cited
US5354707A
Cited
US5616515A
Cited
US5936258A
Cited
US5670790A
Cited
US5886380A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-07-22 | 2006-01-21 | 2006-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-07-22 | 2010-01-21 | 2010-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-07-22 | 2014-01-21 | 2014-07-23 | $7700.00 | Window Closed / Lapsed |