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Patent US6423575B1 successfully refreshed from Google Patents.
US6423575B1
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Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication
Assignee: Northrop Grumman Systems Corp
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Filing: 2001-07-27
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Granted: 2002-07-23
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Expires: 2021-07-27
Abstract
Abstract Disclosed are hydrogen gettering structure ( 11 ) and use of such structure and methods of forming such structure. The hydrogen gettering structure ( 11 ) includes a titanium member ( 1 ) and a silver-doped palladium layer ( 3 ) on the titanium member ( 1 ), the silver assisting palladium to increase the hydrogen gettering. The silver-doped palladium can be deposited on the titanium member by sputtering. The hydrogen gettering structure ( 11 ) can be attached to a semiconductor module component ( 7 ) and incorporated in a semiconductor module ( 10 ) to increase hydrogen gettering, or can be included in other structure (e.g., nuclear reactor structure) where absorption or gettering of hydrogen is necessary or desired.
Inventors
- 👤 Dean Tran
- 👤 Jerry T. Fang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:11
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/40; H10W76/42; H10W76/48; H10W72/00; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 63
Claim 1
Independent Claim
69 words
Hydrogen gettering structure, comprising: a member of a metal for absorbing hydrogen; and a metal-doped palladium layer on said member, the metal dopant of the metal-doped palladium layer being selected from the group consisting of silver, rubidium and rhodium and being included in an amount sufficiently low such that the metal dopant does not form an alloy with the palladium, the metal for absorbing hydrogen being different than palladium.
Claim 2
Dependent Claim
69 words
Hydrogen gettering structure, comprising: a member of a metal for absorbing hydrogen; and a metal-doped palladium layer on said member, the metal dopant of the metal-doped palladium layer being selected from the group consisting of silver, rubidium and rhodium and being included in an amount sufficiently low such that the metal dopant does not form an alloy with the palladium, the metal for absorbing hydrogen being different than palladium.
Claim 3
Dependent Claim
24 words
The hydrogen gettering structure according to claim 1 , wherein the metal-doped palladium layer includes at least 0.1% by weight of the metal dopant.
Claim 4
Dependent Claim
22 words
The hydrogen gettering structure according to claim 2 , wherein the metal-doped palladium layer includes 0.1%-10% by weight of the metal dopant.
Claim 5
Dependent Claim
25 words
The hydrogen gettering structure according to claim 2 , wherein the metal for absorbing hydrogen is selected from the group consisting of titanium and zirconium.
Claim 6
Dependent Claim
17 words
The hydrogen gettering structure according to claim 4 , wherein the metal for absorbing hydrogen is titanium.
Claim 7
Dependent Claim
21 words
The hydrogen gettering structure according to claim 1 , wherein the metal dopant is distributed uniformly through the metal-doped palladium layer.
Claim 8
Dependent Claim
29 words
Hydrogen gettering structure, comprising: a titanium member; and a silver-doped palladium layer provided on the titanium member, wherein the silver-doped palladium layer contains 0.1 to 10% by weight silver.
Claim 9
Dependent Claim
29 words
Hydrogen gettering structure, comprising: a titanium member; and a silver-doped palladium layer provided on the titanium member, wherein the silver-doped palladium layer contains 0.1 to 10% by weight silver.
Claim 10
Dependent Claim
21 words
The hydrogen gettering structure according to claim 7 , wherein the silver-doped palladium layer includes 0.2 to 1% by weight silver.
Claim 11
Dependent Claim
18 words
The hydrogen gettering structure according to claim 7 ,wherein the silver-doped palladium layer includes 0.5% by weight silver.
Claim 12
Dependent Claim
26 words
The hydrogen gettering structure according to claim 7 , wherein the titanium member is a titanium sheet, having the silver-doped palladium layer on one side thereof.
Claim 13
Dependent Claim
25 words
The hydrogen gettering structure according to claim 10 , wherein the titanium sheet has a gold layer on the side thereof opposite said one side.
Claim 14
Dependent Claim
22 words
The hydrogen gettering structure according to claim 10 , wherein the titanium sheet has a thickness of 5 mil to 3 mm.
Claim 15
Dependent Claim
23 words
The hydrogen gettering structure according to claim 12 , wherein the silver-doped palladium layer has a thickness of 200 Å to 1 μm.
Claim 16
Dependent Claim
19 words
The hydrogen gettering structure according to claim 10 , wherein the titanium sheet has a thickness of 5-20 mils.
Claim 17
Dependent Claim
23 words
The hydrogen gettering structure according to claim 14 , wherein the silver-doped palladium layer has a thickness of 200 Å to 1 μm.
Claim 18
Dependent Claim
23 words
The hydrogen gettering structure according to claim 7 , wherein the silver-doped palladium layer has a thickness of 200 Å to 1 μm.
Claim 19
Dependent Claim
23 words
The hydrogen gettering structure according to claim 16 , wherein the silver-doped palladium layer has a thickness of 500 Å to 5000 Å.
Claim 20
Dependent Claim
20 words
The hydrogen gettering structure according to claim 7 , wherein the silver is distributed uniformly through the silver-doped palladium layer.
Claim 21
Dependent Claim
56 words
A module component for packaging a semiconductor device, comprising a packaging component for packaging the semiconductor device, and the hydrogen gettering structure according to claim 7 affixed to the packaging component, with the titanium member of the hydrogen gettering structure being closer to the packaging component than the silver-doped palladium layer is to the packaging component.
Claim 22
Dependent Claim
30 words
The module component according to claim 19 , wherein the silver-doped palladium layer is adapted to be exposed to the inside of a module formed that includes the module component.
Claim 23
Dependent Claim
22 words
The module component according to claim 19 , wherein the hydrogen gettering structure is affixed to the packaging component by epoxy adhesive.
Claim 24
Dependent Claim
35 words
The module component according to claim 19 , wherein the hydrogen gettering structure is affixed to the packaging component by a process selected from the group consisting of soldering, laser welding and direct current welding.
Claim 25
Dependent Claim
23 words
The module component according to claim 19 , wherein the packaging component is a lid of a module formed using the module component.
Claim 26
Dependent Claim
61 words
A module component for packaging a semiconductor device, comprising a packaging component for packaging the semiconductor device, and the hydrogen gettering structure according to claim 1 affixed to the packaging component, with the member of the metal for absorbing hydrogen, of the hydrogen gettering structure, being closer to the packaging component than the metal-doped palladium layer is to the packaging component.
Claim 27
Dependent Claim
30 words
The module component according to claim 24 , wherein the metal-doped palladium layer is adapted to be exposed to the inside of a module formed that includes the module component.
Claim 28
Dependent Claim
29 words
A semiconductor device module, comprising: a housing for a semiconductor device, the housing including the module component according to claim 24 ; and a semiconductor device within the housing.
Claim 29
Dependent Claim
17 words
The semiconductor device module according to claim 26 , wherein the semiconductor device includes III-V semiconductor material.
Claim 30
Dependent Claim
19 words
The semiconductor device module according to claim 26 , wherein the semiconductor device includes a millimeter wave integrated circuit.
Claim 31
Dependent Claim
29 words
A semiconductor device module, comprising: a housing for a semiconductor device, the housing including the module component according to claim 19 ; and a semiconductor device within the housing.
Claim 32
Dependent Claim
19 words
The semiconductor device module according to claim 29 , wherein the semiconductor device includes a millimeter wave integrated circuit.
Claim 33
Independent Claim
75 words
A method of forming hydrogen gettering structure, comprising: providing a member of a metal for absorbing hydrogen; and depositing on said member a metal-doped palladium layer, the metal dopant of the metal-doped palladium layer being selected from the group consisting of silver, rubidium and rhodium and being included in an amount sufficiently low such that the metal dopant does not form an alloy with the palladium, the metal for absorbing hydrogen being different than palladium.
Claim 34
Independent Claim
75 words
A method of forming hydrogen gettering structure, comprising: providing a member of a metal for absorbing hydrogen; and depositing on said member a metal-doped palladium layer, the metal dopant of the metal-doped palladium layer being selected from the group consisting of silver, rubidium and rhodium and being included in an amount sufficiently low such that the metal dopant does not form an alloy with the palladium, the metal for absorbing hydrogen being different than palladium.
Claim 35
Dependent Claim
23 words
The method according to claim 31 , wherein the deposited metal-doped palladium layer includes at least 0.1% by weight of the metal dopant.
Claim 36
Dependent Claim
21 words
The method according to claim 31 , wherein the deposited metal-doped palladium layer includes 0.1%-10% by weight of the metal dopant.
Claim 37
Dependent Claim
15 words
The method according to claim 31 , wherein the metal for absorbing hydrogen is titanium.
Claim 38
Dependent Claim
16 words
The method according to claim 31 , wherein the metal-doped palladium layer is deposited by sputtering.
Claim 39
Dependent Claim
21 words
The method according to claim 35 , wherein the sputtering is performed using a target of palladium and the metal dopant.
Claim 40
Dependent Claim
17 words
The method according to claim 31 , wherein the metal-doped palladium layer is deposited by vacuum evaporation.
Claim 41
Dependent Claim
16 words
The method according to claim 31 , wherein the vacuum evaporation is an electron beam evaporation.
Claim 42
Dependent Claim
25 words
The method according to claim 31 , wherein said member of a metal for absorbing hydrogen is a sheet of said metal for absorbing hydrogen.
Claim 43
Independent Claim
34 words
A method of forming hydrogen gettering structure, comprising: providing a titanium member; and depositing a silver-doped palladium layer on the titanium member, wherein the silver-doped palladium layer includes 0.1 to 10% by weight silver.
Claim 44
Independent Claim
34 words
A method of forming hydrogen gettering structure, comprising: providing a titanium member; and depositing a silver-doped palladium layer on the titanium member, wherein the silver-doped palladium layer includes 0.1 to 10% by weight silver.
Claim 45
Dependent Claim
31 words
The method according to claim 40 , wherein the titanium member is a sheet of titanium, and the silver-doped palladium layer is deposited on one side of the sheet of titanium.
Claim 46
Dependent Claim
29 words
The method according to claim 41 , comprising the further step of depositing a layer of gold on the side of the sheet of titanium opposite said one side.
Claim 47
Dependent Claim
16 words
The method according to claim 40 , wherein the silver-doped palladium layer is deposited by sputtering.
Claim 48
Dependent Claim
16 words
The method according to claim 43 , wherein the sputtering is performed using a PdAg target.
Claim 49
Dependent Claim
18 words
The method according to claim 40 , wherein the silver-doped palladium layer is deposited by electron beam evaporation.
Claim 50
Independent Claim
99 words
A method of fabricating a module component for a semiconductor device module, comprising: providing a member of a metal for absorbing hydrogen; and depositing a palladium layer doped with a metal dopant on the member, the metal dopant being selected from the group consisting of silver, rubidium and rhodium and being included in an amount sufficiently low such that the metal dopant does not form an alloy with the palladium, the metal for absorbing hydrogen being different than palladium, thereby forming hydrogen gettering structure; and affixing the hydrogen gettering structure to a packaging component of the semiconductor device module.
Claim 51
Independent Claim
99 words
A method of fabricating a module component for a semiconductor device module, comprising: providing a member of a metal for absorbing hydrogen; and depositing a palladium layer doped with a metal dopant on the member, the metal dopant being selected from the group consisting of silver, rubidium and rhodium and being included in an amount sufficiently low such that the metal dopant does not form an alloy with the palladium, the metal for absorbing hydrogen being different than palladium, thereby forming hydrogen gettering structure; and affixing the hydrogen gettering structure to a packaging component of the semiconductor device module.
Claim 52
Dependent Claim
19 words
The method according to claim 46 , wherein the packaging component is a lid of the semiconductor device module.
Claim 53
Dependent Claim
32 words
The method according to claim 46 , wherein the laminate is affixed to the packaging component by a process selected from the group consisting of soldering, laser welding and direct current welding.
Claim 54
Dependent Claim
16 words
The method according to claim 48 , wherein the soldering is performing using an eutectic solder.
Claim 55
Dependent Claim
20 words
The method according to claim 46 , wherein the laminate is affixed to the packaging component by an epoxy adhesive.
Claim 56
Independent Claim
58 words
A method of fabricating a module component of a semiconductor device module, comprising: providing a titanium member; depositing a silver-doped palladium layer on the titanium member, wherein the silver-doped palladium layer includes 0.1 to 10% by weight silver, thereby forming hydrogen gettering structure; and affixing the hydrogen gettering structure to a packaging component of the semiconductor device module.
Claim 57
Independent Claim
58 words
A method of fabricating a module component of a semiconductor device module, comprising: providing a titanium member; depositing a silver-doped palladium layer on the titanium member, wherein the silver-doped palladium layer includes 0.1 to 10% by weight silver, thereby forming hydrogen gettering structure; and affixing the hydrogen gettering structure to a packaging component of the semiconductor device module.
Claim 58
Dependent Claim
31 words
The method according to claim 51 , wherein the titanium member is a sheet of titanium, and the silver-doped palladium layer is deposited on one side of the sheet of titanium.
Claim 59
Dependent Claim
35 words
The method according to claim 52 , comprising the further step, in forming the hydrogen gettering structure, of forming a layer of gold on the side of the titanium sheet opposite to said one side.
Claim 60
Dependent Claim
48 words
The method according to claim 53 , wherein the hydrogen gettering structure is affixed to the packaging component by a process selected from the group consisting of soldering, laser welding and direct current welding, with the gold layer of the hydrogen gettering structure closest to the packaging component.
Claim 61
Dependent Claim
22 words
The method according to claim 51 , wherein the hydrogen gettering structure is affixed to the packaging component by an epoxy adhesive.
Claim 62
Dependent Claim
21 words
The method according to claim 51 , including the further step of cutting the titanium member to fit the packaging component.
Claim 63
Dependent Claim
34 words
The method according to claim 51 , wherein in affixing the hydrogen gettering structure to the packaging component, the titanium member is positioned closer to the packaging component than is the silver-doped palladium layer.
References Cited (Backward Citations)
US5491361A
Cited
US5543364A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 7.5 Years (Year 8) | 2009-07-22 | 2010-01-21 | 2010-07-23 | $3760.00 | Window Closed / Lapsed |
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