Patent US6413382B1 successfully refreshed from Google Patents.
US6413382B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pulsed sputtering with a small rotating magnetron
Assignee: Applied Materials Inc
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Filing: 2000-11-03
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Granted: 2002-07-02
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Expires: 2020-11-03
Abstract
Abstract A magnetron sputter reactor having a target that is pulsed with a duty cycle of less than 10% and preferably less than 1% and further having a small magnetron of area less than 20% of the target area rotating about the target center, whereby a very high plasma density is produced during the pulse adjacent to the area of the magnetron. The power pulsing frequency needs to be desynchronized from the rotation frequency so that the magnetron does not overlie the same area of the magnetron during different pulses. Advantageously, the power pulses are delivered above a DC background level sufficient to continue to excite the plasma so that no ignition is required for each pulse.
Inventors
- 👤 Wei Wang
- 👤 Praburam Gopalraja
- 👤 Jianming Fu
- 👤 Zheng Xu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:48
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3444; H01J37/3402; H01J37/3405; H01J37/3408; H01J37/345; H01J37/3455
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
77 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron having an area of less than 20% of the area of the target and being rotatable about a back of said target; and a power supply connected to said target and delivering pulses of power of negative voltage with a duty cycle of less than 10%.
Claim 2
Dependent Claim
77 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron having an area of less than 20% of the area of the target and being rotatable about a back of said target; and a power supply connected to said target and delivering pulses of power of negative voltage with a duty cycle of less than 10%.
Claim 3
Dependent Claim
14 words
The reactor of claim 1 , wherein said duty cycle is less than 1%.
Claim 4
Dependent Claim
19 words
The reactor of claim 1 , wherein said pulses have a power pulse width of no more than 1ms.
Claim 5
Dependent Claim
16 words
The reactor of claim 3 , wherein said pulse width is no more than 200 μs.
Claim 6
Dependent Claim
27 words
The reactor of claim 1 , wherein said magnetron comprises a closed outer pole of one magnetic polarity surrounding an inner pole of a second magnetic polarity.
Claim 7
Dependent Claim
121 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron having an area of less than 20% of the area of the target and being rotatable about a back of said target; and a power supply connected to said target and delivering pulses of power with a duty cycle of less than 10%; wherein said power supply delivers said pulses braving a peak power level rising from a background power level, whereby power delivered from said power supply does not fill below a finite level between said pulses, whereby a plasma is continuously maintained in said reactor between said pulses.
Claim 8
Dependent Claim
121 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron having an area of less than 20% of the area of the target and being rotatable about a back of said target; and a power supply connected to said target and delivering pulses of power with a duty cycle of less than 10%; wherein said power supply delivers said pulses braving a peak power level rising from a background power level, whereby power delivered from said power supply does not fill below a finite level between said pulses, whereby a plasma is continuously maintained in said reactor between said pulses.
Claim 9
Dependent Claim
22 words
The reactor of claim 6 , wherein a ratio of said peak power level to said finite level is at least 10.
Claim 10
Dependent Claim
13 words
The reactor of claim 7 , wherein said ratio is at least 100.
Claim 11
Dependent Claim
142 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%; and a motor for rotating said magnetron at a rotation frequency and wherein said power supply delivers said pulses at a repetition frequency, wherein said rotation frequency is desynchronized from said repetition frequency such that said pulses are delivered at respective times at which said magnetron is respectively positioned at at least ten different angular positions at said back of said target.
Claim 12
Dependent Claim
142 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%; and a motor for rotating said magnetron at a rotation frequency and wherein said power supply delivers said pulses at a repetition frequency, wherein said rotation frequency is desynchronized from said repetition frequency such that said pulses are delivered at respective times at which said magnetron is respectively positioned at at least ten different angular positions at said back of said target.
Claim 13
Dependent Claim
81 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%.
Claim 14
Dependent Claim
81 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%.
Claim 15
Dependent Claim
81 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 1%.
Claim 16
Dependent Claim
81 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 1%.
Claim 17
Dependent Claim
107 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%; wherein said adjustable DC power supply is effective at igniting and maintaining a plasma in said plasma sputter reactor without use of said pulsed power supply.
Claim 18
Dependent Claim
107 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%; wherein said adjustable DC power supply is effective at igniting and maintaining a plasma in said plasma sputter reactor without use of said pulsed power supply.
Claim 19
Dependent Claim
107 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target, wherein said magnetron is rotatable about a central axis of said target and has an area of no more than 20% of that of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%.
Claim 20
Dependent Claim
107 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target; a magnetron positioned at a back of said target, wherein said magnetron is rotatable about a central axis of said target and has an area of no more than 20% of that of said target; an adjustable DC power supply connected to said target delivering a selected negative DC voltage; and a pulsed power supply connected in parallel with said adjustable DC power supply and delivering pulses of negative voltage with a duty cycle of less than 10%.
Claim 21
Independent Claim
88 words
A method of operating a sputter reactor, comprising the steps of: rotating a magnetron about the back of a target of the reactor, said back being on an opposite side of said target than a front thereof facing a substrate to be sputter coated, said magnetron having an area of no more than 20% of an area of said target; and applying pulses of power of negative voltage to said target to excite a plasma in said reactor, said pulses having a duty cycle of less than 10%.
Claim 22
Independent Claim
88 words
A method of operating a sputter reactor, comprising the steps of: rotating a magnetron about the back of a target of the reactor, said back being on an opposite side of said target than a front thereof facing a substrate to be sputter coated, said magnetron having an area of no more than 20% of an area of said target; and applying pulses of power of negative voltage to said target to excite a plasma in said reactor, said pulses having a duty cycle of less than 10%.
Claim 23
Dependent Claim
14 words
The method of claim 14 , wherein said duty cycle is less than 1%.
Claim 24
Dependent Claim
16 words
The method of claim 14 , wherein said pulses comprises substantially DC power during said pulses.
Claim 25
Independent Claim
114 words
A method of operating a sputter reactor, comprising the steps of rotating a magnetron about the back of a target of the reactor, said back being on an opposite side of said target than a front thereof facing a substrate to be sputter coated, said magnetron having an area of no more than 20% of an area of said target; applying pulses of power to said target to excite a plasma in said reactor, said pulses having a duty cycle of less than 10%; and applying at least a minimum level of power to said target between said pulses sufficient to maintain said plasma in a chamber of said sputter reactor between said pulses.
Claim 26
Independent Claim
114 words
A method of operating a sputter reactor, comprising the steps of rotating a magnetron about the back of a target of the reactor, said back being on an opposite side of said target than a front thereof facing a substrate to be sputter coated, said magnetron having an area of no more than 20% of an area of said target; applying pulses of power to said target to excite a plasma in said reactor, said pulses having a duty cycle of less than 10%; and applying at least a minimum level of power to said target between said pulses sufficient to maintain said plasma in a chamber of said sputter reactor between said pulses.
Claim 27
Dependent Claim
54 words
The method of claim 17 , wherein said step of applying pulses applies a peak level of power to said target; and wherein said step of applying at least a minimum level of power applies a background level; and wherein a ratio of said peak level to said background level is at least 10.
Claim 28
Dependent Claim
13 words
The method of claim 18 , wherein said ratio is at least 100.
Claim 29
Dependent Claim
13 words
The method of claim 19 , wherein said ratio is at least 1000.
Claim 30
Dependent Claim
100 words
A multi-step sputtering process performed in a sputter reactor including a pulsed power supply delivering a sequence of pulses at a duty cycle to a target, said process comprising the steps of: a first step of delivering said pulses at a first duty cycle to said target to irradiate a substrate with particles sputtered from said target; and a second step of delivering said pulses at a second duty cycle different from said first duty to said target to irradiate said substrate with particles sputtered from said target; wherein at least one of said duty cycles is less than 10%.
Claim 31
Dependent Claim
100 words
A multi-step sputtering process performed in a sputter reactor including a pulsed power supply delivering a sequence of pulses at a duty cycle to a target, said process comprising the steps of: a first step of delivering said pulses at a first duty cycle to said target to irradiate a substrate with particles sputtered from said target; and a second step of delivering said pulses at a second duty cycle different from said first duty to said target to irradiate said substrate with particles sputtered from said target; wherein at least one of said duty cycles is less than 10%.
Claim 32
Dependent Claim
19 words
The process of claim 21 , wherein said at least one of said duty cycles is less than 1%.
Claim 33
Dependent Claim
18 words
The process of claim 21 , wherein said first duty cycle is less than said second duty cycle.
Claim 34
Dependent Claim
37 words
The process of claim 21 , further comprising, during said first and second steps, rotating about a central axis of said target a magnetron having an area of no more than 20% of that of said target.
Claim 35
Dependent Claim
21 words
The process of claim 21 , wherein said pulsed power supply is limited by the energy in each of said pulses.
Claim 36
Dependent Claim
82 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target and an anode with respect to a cathode of said target; a magnetron rotatable about a back of said target; and a power supply connected to said target and delivering pulses to said target of power of negative voltage with respect to said anode and having a duty cycle of less than 10%.
Claim 37
Dependent Claim
82 words
A pulsed magnetron sputter reactor, comprising: a plasma sputter reactor having a target and a pedestal for supporting a substrate to be sputter deposited in opposition to said target and an anode with respect to a cathode of said target; a magnetron rotatable about a back of said target; and a power supply connected to said target and delivering pulses to said target of power of negative voltage with respect to said anode and having a duty cycle of less than 10%.
Claim 38
Independent Claim
91 words
A method of operating a sputter reactor, comprising the steps of: rotating a magnetron about the back of a target of the reactor, said back being on an opposite side of said target than a front thereof facing a substrate to be sputter coated, said reactor having an anode with respect to a cathode of said target; and applying to said target pulses of power of negative power with respect to said anode target to excite a plasma in said reactor, said pulses having a duty cycle of less than 10%.
Claim 39
Independent Claim
91 words
A method of operating a sputter reactor, comprising the steps of: rotating a magnetron about the back of a target of the reactor, said back being on an opposite side of said target than a front thereof facing a substrate to be sputter coated, said reactor having an anode with respect to a cathode of said target; and applying to said target pulses of power of negative power with respect to said anode target to excite a plasma in said reactor, said pulses having a duty cycle of less than 10%.
References Cited (Backward Citations)
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