Method of designing circuit with field effect transistor and method of determining parameters of model used in such designing method

Claim 1

A method of designing a circuit with a field effect transistor, comprising the steps of: expressing the field effect transistor with a two-terminal nonlinear circuit model having a source and a drain, such that a gate terminal thereof is open in at least a frequency band used thereby; and calculating behaviors of the circuit in operation with a large signal represented by a large amplitude of an input voltage, based on said two-terminal nonlinear circuit model.

Claim 2

A method of designing a circuit with a field effect transistor, comprising the steps of: expressing the field effect transistor with a two-terminal nonlinear circuit model having a source and a drain, such that a gate terminal thereof is open in at least a frequency band used thereby; and calculating behaviors of the circuit in operation with a large signal represented by a large amplitude of an input voltage, based on said two-terminal nonlinear circuit model.

Claim 8

A method of designing a circuit with a field effect transistor, comprising the steps of: expressing the field effect transistor with a two-terminal nonlinear circuit model having a source and a drain, such that a gate terminal thereof is open in at least a frequency band used thereby; and calculating behaviors of the circuit in operation with a large signal represented by a large amplitude of an input voltage, based on said two-terminal nonlinear circuit model; wherein said two-terminal nonlinear circuit model comprises a two-terminal circuit model having a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source; wherein the current of said current source is variable depending on a source-drain voltage of said field effect transistor; wherein when the field effect transistor is in the open-channel state, drain current Ids 0 and gate current Ig 0 of said current source are expressed as follows: Ids 0 = { β  ( - R Iso  Ig o + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ - φ B β  ( Vg so - Vds - V T ) 2  tanh  ( α   Vds ) , - φ B ≤ Vds ≤ 0 β  ( Vgs o - V T ) 2  tanh  ( γ   Vds ) , 0 ≤ Vds ( 1 ) Ig 0 = { 0 , - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs o - Vds - φ B ) ] - 1 } , Vds ≤ - φ B ( 2 ) and when the field effect transistor is in the pinch-off state, drain current Ids p and gate current Ig p are expressed as follows: Ids p = { β  ( - R Iso  Ig p + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ Vgs p - φ B β  ( Vgs p - Vds - V T ) 2  tanh  ( α   Vds ) , Vgs p - φ B ≤ Vds ≤ Vgs p - V T 0 , Vgs p - V T ≤ Vds ≤ V B Is D  { exp  [ κ r  ( Vds - V B ) ] - 1 } , V B ≤ Vds ( 3 ) Ig p = { 0 , Vgs p - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs p - Vds - φ B ) ] - 1 } , Vds ≤ Vgs p - φ B ( 4 ) where Vds represents a source-drain voltage, N B a built-in voltage, V T a threshold voltage, Vgs 0 a gate bias in the open-channel state, Vgs p a gate bias in the pinch-off state, ∀ a drain voltage scaling factor when Vds is negative, ∃ a transconductance parameter, (a drain voltage scaling factor when Vds is positive, V B a drain breakdown voltage, IS D , IS G drain and gate saturation current parameters, 6 r ′, 6 f voltage scaling factors, and R lso , a gate isolation resistance.

Claim 9

A method of designing a circuit with a field effect transistor, comprising the steps of: expressing the field effect transistor with a two-terminal nonlinear circuit model having a source and a drain, such that a gate terminal thereof is open in at least a frequency band used thereby; and calculating behaviors of the circuit in operation with a large signal represented by a large amplitude of an input voltage, based on said two-terminal nonlinear circuit model; wherein said two-terminal nonlinear circuit model comprises a two-terminal circuit model having a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source; wherein the current of said current source is variable depending on a source-drain voltage of said field effect transistor; wherein when the field effect transistor is in the open-channel state, drain current Ids 0 and gate current Ig 0 of said current source are expressed as follows: Ids 0 = { β  ( - R Iso  Ig o + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ - φ B β  ( Vg so - Vds - V T ) 2  tanh  ( α   Vds ) , - φ B ≤ Vds ≤ 0 β  ( Vgs o - V T ) 2  tanh  ( γ   Vds ) , 0 ≤ Vds ( 1 ) Ig 0 = { 0 , - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs o - Vds - φ B ) ] - 1 } , Vds ≤ - φ B ( 2 ) and when the field effect transistor is in the pinch-off state, drain current Ids p and gate current Ig p are expressed as follows: Ids p = { β  ( - R Iso  Ig p + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ Vgs p - φ B β  ( Vgs p - Vds - V T ) 2  tanh  ( α   Vds ) , Vgs p - φ B ≤ Vds ≤ Vgs p - V T 0 , Vgs p - V T ≤ Vds ≤ V B Is D  { exp  [ κ r  ( Vds - V B ) ] - 1 } , V B ≤ Vds ( 3 ) Ig p = { 0 , Vgs p - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs p - Vds - φ B ) ] - 1 } , Vds ≤ Vgs p - φ B ( 4 ) where Vds represents a source-drain voltage, N B a built-in voltage, V T a threshold voltage, Vgs 0 a gate bias in the open-channel state, Vgs p a gate bias in the pinch-off state, ∀ a drain voltage scaling factor when Vds is negative, ∃ a transconductance parameter, (a drain voltage scaling factor when Vds is positive, V B a drain breakdown voltage, IS D , IS G drain and gate saturation current parameters, 6 r ′, 6 f voltage scaling factors, and R lso , a gate isolation resistance.

Claim 10

A method of determining parameters of a two-terminal nonlinear circuit model having a source and a drain and representing a field effect transistor such that a gate terminal thereof is open in at least a frequency band used thereby, comprising the steps of: employing, as said two-terminal nonlinear circuit model, a two-terminal circuit model comprising a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source; expressing drain currents and gate currents and gate currents when the field effect transistor is in an open-channel state and a pinch-off state, using a function of a source-drain voltage or a predetermined function depending on a range of the source-drain voltage; calculating behaviors of the two-terminal nonlinear circuit model in operation with a large signal represented by a large amplitude of an input voltage; and measuring electrical parameters on a field effect transistor and determining parameters of said equations based on measured values.

Claim 11

A method of determining parameters of a two-terminal nonlinear circuit model having a source and a drain and representing a field effect transistor such that a gate terminal thereof is open in at least a frequency band used thereby, comprising the steps of: employing, as said two-terminal nonlinear circuit model, a two-terminal circuit model comprising a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source; expressing drain currents and gate currents and gate currents when the field effect transistor is in an open-channel state and a pinch-off state, using a function of a source-drain voltage or a predetermined function depending on a range of the source-drain voltage; calculating behaviors of the two-terminal nonlinear circuit model in operation with a large signal represented by a large amplitude of an input voltage; and measuring electrical parameters on a field effect transistor and determining parameters of said equations based on measured values.

Claim 14

A method of determining parameters of a two-terminal nonlinear circuit model having a source and a drain and representing a field effect transistor such that a gate terminal thereof is open in at least a frequency band used thereby, comprising the steps of: employing, as said two-terminal nonlinear circuit model, a two-terminal circuit model comprising a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source; expressing drain currents and gate currents when the field effect transistor is in an open-channel state and a pinch-off state, with equations using a function of a source-drain voltage or a predetermined function depending on a range of the source-drain voltage; and measuring electrical parameters on a field effect transistor and determining parameters of said equations based on measured values; further comprising the steps of: independently determining parameters related to said source-drain capacitance by fitting small signal parameters measured in operation with a small signal represented by a small amplitude of an input voltage which is determined by an impedance and an input voltage of a circuit with said field effect transistor; and independently determining parameters related to said current source by fitting measured values of current-voltage characteristics of said field-effect transistor; wherein when the field-effect transistor is in the open-channel state, drain current Ids 0 and gate current Ig 0 are expressed as follows: Ids 0 = { β  ( - R Iso  Ig o + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ - φ B β  ( Vg so - Vds - V T ) 2  tanh  ( α   Vds ) , - φ B ≤ Vds ≤ 0 β  ( Vgs o - V T ) 2  tanh  ( γ   Vds ) , 0 ≤ Vds ( 1 ) Ig 0 = { 0 , - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs o - Vds - φ B ) ] - 1 } , Vds ≤ - φ B ( 2 ) and when the field effect transistor is in the pinch-off state, drain current Ids p and gate current Ig p are expressed as follows: Ids p = { β  ( - R Iso  Ig p + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ Vgs p - φ B β  ( Vgs p - Vds - V T ) 2  tanh  ( α   Vds ) , Vgs p - φ B ≤ Vds ≤ Vgs p - V T 0 , Vgs p - V T ≤ Vds ≤ V B Is D  { exp  [ κ r  ( Vds - V B ) ] - 1 } , V B ≤ Vds ( 3 ) Ig p = { 0 , Vgs p - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs p - Vds - φ B ) ] - 1 } , Vds ≤ Vgs p - φ B ( 4 ) where Vds represents a source-drain voltage, N B a built-in voltage, V T a threshold voltage, Vgs 0 a gate bias in the open-channel state, Vgs p a gate bias in the pinch-off state, ∀ a drain voltage scaling factor when Vds is negative, ∃ a transconductance parameter, (a drain voltage scaling factor when Vds is positive, V B a drain breakdown voltage, Is D , IS G drain and gate saturation current parameters, Kr′, Kf voltage scaling factors, and P Iso a gate isolation resistance, and the parameters related to said current sources are determined on the basis of the above equations.

Claim 15

A method of determining parameters of a two-terminal nonlinear circuit model having a source and a drain and representing a field effect transistor such that a gate terminal thereof is open in at least a frequency band used thereby, comprising the steps of: employing, as said two-terminal nonlinear circuit model, a two-terminal circuit model comprising a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source; expressing drain currents and gate currents when the field effect transistor is in an open-channel state and a pinch-off state, with equations using a function of a source-drain voltage or a predetermined function depending on a range of the source-drain voltage; and measuring electrical parameters on a field effect transistor and determining parameters of said equations based on measured values; further comprising the steps of: independently determining parameters related to said source-drain capacitance by fitting small signal parameters measured in operation with a small signal represented by a small amplitude of an input voltage which is determined by an impedance and an input voltage of a circuit with said field effect transistor; and independently determining parameters related to said current source by fitting measured values of current-voltage characteristics of said field-effect transistor; wherein when the field-effect transistor is in the open-channel state, drain current Ids 0 and gate current Ig 0 are expressed as follows: Ids 0 = { β  ( - R Iso  Ig o + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ - φ B β  ( Vg so - Vds - V T ) 2  tanh  ( α   Vds ) , - φ B ≤ Vds ≤ 0 β  ( Vgs o - V T ) 2  tanh  ( γ   Vds ) , 0 ≤ Vds ( 1 ) Ig 0 = { 0 , - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs o - Vds - φ B ) ] - 1 } , Vds ≤ - φ B ( 2 ) and when the field effect transistor is in the pinch-off state, drain current Ids p and gate current Ig p are expressed as follows: Ids p = { β  ( - R Iso  Ig p + φ B - V T ) 2  tanh  ( α   Vds ) , Vds ≤ Vgs p - φ B β  ( Vgs p - Vds - V T ) 2  tanh  ( α   Vds ) , Vgs p - φ B ≤ Vds ≤ Vgs p - V T 0 , Vgs p - V T ≤ Vds ≤ V B Is D  { exp  [ κ r  ( Vds - V B ) ] - 1 } , V B ≤ Vds ( 3 ) Ig p = { 0 , Vgs p - φ B ≤ Vds Is G ( exp  [ κ f  ( Vgs p - Vds - φ B ) ] - 1 } , Vds ≤ Vgs p - φ B ( 4 ) where Vds represents a source-drain voltage, N B a built-in voltage, V T a threshold voltage, Vgs 0 a gate bias in the open-channel state, Vgs p a gate bias in the pinch-off state, ∀ a drain voltage scaling factor when Vds is negative, ∃ a transconductance parameter, (a drain voltage scaling factor when Vds is positive, V B a drain breakdown voltage, Is D , IS G drain and gate saturation current parameters, Kr′, Kf voltage scaling factors, and P Iso a gate isolation resistance, and the parameters related to said current sources are determined on the basis of the above equations.

Claim 16

A method of determining parameters of a two-terminal nonlinear circuit model having a source and a drain and representing a field effect transistor such that a gate terminal thereof is open in at least a frequency band used thereby, comprising the steps of: employing, as said two-terminal nonlinear circuit model, a two-terminal circuit model comprising a circuit having a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source when said field effect transistor is in a pinch-off state, and a circuit having only said current source when said field-effect transistor is in an open-channel slate; expressing drain currents and gate currents when the field-effect transistor is in the open-channel state and the pinch-off state, using a function of a source-drain voltage or a predetermined function depending on a range of the source-drain voltage; calculating behaviors of the two-terminal nonlinear circuit model in operation with a large signal represented by a large amplitude of an input voltage; and measuring electrical parameters on a field effect transistor and determining parameters of said equations based on measured values.

Claim 17

A method of determining parameters of a two-terminal nonlinear circuit model having a source and a drain and representing a field effect transistor such that a gate terminal thereof is open in at least a frequency band used thereby, comprising the steps of: employing, as said two-terminal nonlinear circuit model, a two-terminal circuit model comprising a circuit having a current source whose current varies depending on a voltage and a source-drain capacitance connected in parallel to said current source when said field effect transistor is in a pinch-off state, and a circuit having only said current source when said field-effect transistor is in an open-channel slate; expressing drain currents and gate currents when the field-effect transistor is in the open-channel state and the pinch-off state, using a function of a source-drain voltage or a predetermined function depending on a range of the source-drain voltage; calculating behaviors of the two-terminal nonlinear circuit model in operation with a large signal represented by a large amplitude of an input voltage; and measuring electrical parameters on a field effect transistor and determining parameters of said equations based on measured values.