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US6407430B1
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Electro-optical device and semiconductor circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 2001-07-19
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Granted: 2002-06-18
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Expires: 2021-07-19
Abstract
Abstract A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base film and a semiconductor film are continuously formed on a quartz substrate without exposing to the air. After the semiconductor film is crystallized by using a catalytic element, the catalytic element is removed. In the TFT formed in such a process, fluctuation in electrical characteristics such as a threshold voltage and a subthreshold coefficient is extremely small. Thus, it is possible to form a circuit, such as a differential amplifier circuit, which is apt to receive an influence of characteristic fluctuation of a TFT.
Inventors
- 👤 Hisashi Ohtani
- 👤 Jun Koyama
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:25
CPC Classifications
G; G02; G02B; G02B27/00; G02B27/01; G02B27/017; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6719; H10D62/00; H10D62/40; H10D62/405; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/0251; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10P14/38; H10P14/3802; H10P14/3806; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10D30/674; H10D30/6741
Claims Analysis
Total Claims: 59
Claim 1
Independent Claim
66 words
A semiconductor device including an operation amplifier having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 2
Dependent Claim
66 words
A semiconductor device including an operation amplifier having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 1 , wherein said plane orientations are observed by an electron beam diffraction pattern when an electron beam is vertically irradiated to said semiconductor layer.
Claim 5
Dependent Claim
15 words
A semiconductor device according to claim 1 , wherein said substrate is a quartz substrate.
Claim 6
Dependent Claim
17 words
A semiconductor device according to claim 1 , wherein said semiconductor device is an electro-luminescence display device.
Claim 7
Dependent Claim
38 words
A semiconductor device according to claim 1 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 8
Dependent Claim
64 words
A semiconductor device including a D/A converter circuit having a plurality of thin film transistors, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 9
Dependent Claim
64 words
A semiconductor device including a D/A converter circuit having a plurality of thin film transistors, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 10
Dependent Claim
18 words
A semiconductor device according to claim 7 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 11
Dependent Claim
31 words
A semiconductor device according to claim 7 , wherein said plane orientations are observed by an electron beam diffraction pattern when an electron beam is vertically irradiated to said semiconductor layer.
Claim 12
Dependent Claim
15 words
A semiconductor device according to claim 7 , wherein said substrate is a quartz substrate.
Claim 13
Dependent Claim
17 words
A semiconductor device according to claim 7 , wherein said semiconductor device is an electro-luminescence display device.
Claim 14
Dependent Claim
38 words
A semiconductor device according to claim 7 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 15
Dependent Claim
80 words
A semiconductor device having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations, wherein 90% or more of crystal lattices have continuity at any crystal grain boundaries in said semiconductor layer.
Claim 16
Dependent Claim
80 words
A semiconductor device having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations, wherein 90% or more of crystal lattices have continuity at any crystal grain boundaries in said semiconductor layer.
Claim 17
Dependent Claim
18 words
A semiconductor device according to claim 13 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 18
Dependent Claim
31 words
A semiconductor device according to claim 13 , wherein said plane orientations are observed by an electron beam diffraction pattern when an electron beam is vertically irradiated to said semiconductor layer.
Claim 19
Dependent Claim
22 words
A semiconductor device according to claim 13 , wherein said crystal grain boundaries are observed by a high resolution transmission electron microscope.
Claim 20
Dependent Claim
15 words
A semiconductor device according to claim 13 , wherein said substrate is a quartz substrate.
Claim 21
Dependent Claim
17 words
A semiconductor device according to claim 13 , wherein said semiconductor device is an electro-luminescence display device.
Claim 22
Dependent Claim
38 words
A semiconductor device according to claim 13 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 23
Dependent Claim
84 words
A semiconductor device including an operation amplifier having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations, wherein 90% or more of crystal lattices have continuity at any crystal grain boundaries in said semiconductor layer.
Claim 24
Dependent Claim
84 words
A semiconductor device including an operation amplifier having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations, wherein 90% or more of crystal lattices have continuity at any crystal grain boundaries in said semiconductor layer.
Claim 25
Dependent Claim
18 words
A semiconductor device according to claim 20 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 26
Dependent Claim
31 words
A semiconductor device according to claim 20 , wherein said plane orientations are observed by an electron beam diffraction pattern when an electron beam is vertically irradiated to said semiconductor layer.
Claim 27
Dependent Claim
22 words
A semiconductor device according to claim 20 , wherein said crystal grain boundaries are observed by a high resolution transmission electron microscope.
Claim 28
Dependent Claim
15 words
A semiconductor device according to claim 20 , wherein said substrate is a quartz substrate.
Claim 29
Dependent Claim
17 words
A semiconductor device according to claim 20 , wherein said semiconductor device is an electro-luminescence display device.
Claim 30
Dependent Claim
38 words
A semiconductor device according to claim 20 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 31
Dependent Claim
82 words
A semiconductor device including a D/A converter circuit having a plurality of thin film transistors, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations, wherein 90% or more of crystal lattices have continuity at any crystal grain boundaries in said semiconductor layer.
Claim 32
Dependent Claim
82 words
A semiconductor device including a D/A converter circuit having a plurality of thin film transistors, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, said channel formation region comprising at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations, wherein 90% or more of crystal lattices have continuity at any crystal grain boundaries in said semiconductor layer.
Claim 33
Dependent Claim
18 words
A semiconductor device according to claim 27 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 34
Dependent Claim
31 words
A semiconductor device according to claim 27 , wherein said plane orientations are observed by an electron beam diffraction pattern when an electron beam is vertically irradiated to said semiconductor layer.
Claim 35
Dependent Claim
22 words
A semiconductor device according to claim 27 , wherein said crystal grain boundaries are observed by a high resolution transmission electron microscope.
Claim 36
Dependent Claim
15 words
A semiconductor device according to claim 27 , wherein said substrate is a quartz substrate.
Claim 37
Dependent Claim
17 words
A semiconductor device according to claim 27 , wherein said semiconductor device is an electro-luminescence display device.
Claim 38
Dependent Claim
38 words
A semiconductor device according to claim 27 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 39
Dependent Claim
78 words
A semiconductor device having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, wherein standard deviations are 0.1 V or less, and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.
Claim 40
Dependent Claim
78 words
A semiconductor device having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, wherein standard deviations are 0.1 V or less, and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.
Claim 41
Dependent Claim
18 words
A semiconductor device according to claim 34 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 42
Dependent Claim
32 words
A semiconductor device according to claim 34 , wherein said channel formation region comprises at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 43
Dependent Claim
15 words
A semiconductor device according to claim 34 , wherein said substrate is a quartz substrate.
Claim 44
Dependent Claim
17 words
A semiconductor device according to claim 34 , wherein said semiconductor device is an electro-luminescence display device.
Claim 45
Dependent Claim
38 words
A semiconductor device according to claim 34 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 46
Dependent Claim
82 words
A semiconductor device including an operation amplifier having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, wherein standard deviations are 0.1 V or less, and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.
Claim 47
Dependent Claim
82 words
A semiconductor device including an operation amplifier having a plurality of thin film transistors over a substrate, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, wherein standard deviations are 0.1 V or less, and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.
Claim 48
Dependent Claim
18 words
A semiconductor device according to claim 40 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 49
Dependent Claim
32 words
A semiconductor device according to claim 40 , wherein said channel formation region comprises at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 50
Dependent Claim
15 words
A semiconductor device according to claim 40 , wherein said substrate is a quartz substrate.
Claim 51
Dependent Claim
17 words
A semiconductor device according to claim 40 , wherein said semiconductor device is an electro-luminescence display device.
Claim 52
Dependent Claim
38 words
A semiconductor device according to claim 40 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
Claim 53
Dependent Claim
80 words
A semiconductor device including a D/A converter circuit having a plurality of thin film transistors, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, wherein standard deviations are 0.1 V or less, and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.
Claim 54
Dependent Claim
80 words
A semiconductor device including a D/A converter circuit having a plurality of thin film transistors, each said plurality of thin film transistors comprising: a crystalline semiconductor layer having at least a source region, a drain region, and a channel formation region, wherein standard deviations are 0.1 V or less, and 10 mV/dec or less, respectively, when a collective of threshold voltages and a collective of subthreshold coefficients exhibited by the plurality of respective thin film transistors are made a population.
Claim 55
Dependent Claim
18 words
A semiconductor device according to claim 46 , wherein said semiconductor layer comprises Si x Ge (1-x) (0.9≦x≦0.99).
Claim 56
Dependent Claim
32 words
A semiconductor device according to claim 46 , wherein said channel formation region comprises at least one selected from the group consisting of {110}, {211}, {321}, {431}, {532}, and {541} plane orientations.
Claim 57
Dependent Claim
15 words
A semiconductor device according to claim 46 , wherein said substrate is a quartz substrate.
Claim 58
Dependent Claim
17 words
A semiconductor device according to claim 46 , wherein said semiconductor device is an electro-luminescence display device.
Claim 59
Dependent Claim
38 words
A semiconductor device according to claim 46 , wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a personal computer, and a mobile telephone.
References Cited (Backward Citations)
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