US6404061B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and semiconductor chip
Assignee: ACHLYS TECHNOLOGIES INC.
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Filing: 2000-02-24
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Granted: 2002-06-11
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Expires: 2020-02-24
Abstract
Abstract A semiconductor device having a solid device, and a semiconductor chip bonded to the solid device with a back face thereof being opposed to a front face of the solid device. The semiconductor chip has a back electrode provided on the back face thereof and electrically connected to an electrode provided on a front face thereof through a through-hole. The solid device may be a wiring board or another semiconductor chip. Further another semiconductor chip may be stacked and bonded onto the front face of the semiconductor chip.
Inventors
- 👤 Junichi Hikita
- 👤 Isamu Nishimura
- 👤 Nobuhisa Kumamoto
- 👤 Yoshiyasu Morishima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:20
CPC Classifications
H; H10; H10W; H10W90/00; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0261; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722; H10W90/724; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
94 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; and a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole, wherein the front electrode includes a bump projecting from the front face of the semiconductor substrate, and wherein the back electrode and the through-interconnection are composed of the same material as the bump.
Claim 2
Dependent Claim
94 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; and a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole, wherein the front electrode includes a bump projecting from the front face of the semiconductor substrate, and wherein the back electrode and the through-interconnection are composed of the same material as the bump.
Claim 3
Dependent Claim
33 words
A semiconductor chip as set forth in claim 1 , further comprising a front interconnection provided on the front face of the semiconductor substrate for connection between the through-interconnection and the front electrode.
Claim 4
Dependent Claim
21 words
A semiconductor chip as set forth in claim 2 , wherein the bump has a greater height than the front interconnection.
Claim 5
Dependent Claim
119 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; a back electrode provided or a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole; and a back interconnection provided on the back face of the semiconductor substrate for connection between the through-interconnection and the back electrode, wherein the front electrode includes a bump protecting from the front face of the semiconductor chip, and wherein the back electrode, the through-interconnect on and the back interconnection are composed of the same material as the bump.
Claim 6
Dependent Claim
119 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; a back electrode provided or a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole; and a back interconnection provided on the back face of the semiconductor substrate for connection between the through-interconnection and the back electrode, wherein the front electrode includes a bump protecting from the front face of the semiconductor chip, and wherein the back electrode, the through-interconnect on and the back interconnection are composed of the same material as the bump.
Claim 7
Dependent Claim
104 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; and a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole, wherein an insulating film is provided on an interior of the through-hole and on portions of the front and back faces of the semiconductor substrate adjacent to the through-hole, and wherein the through-interconnection and the front electrode are provided on the insulating film.
Claim 8
Dependent Claim
104 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; and a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole, wherein an insulating film is provided on an interior of the through-hole and on portions of the front and back faces of the semiconductor substrate adjacent to the through-hole, and wherein the through-interconnection and the front electrode are provided on the insulating film.
Claim 9
Dependent Claim
117 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole; and a front interconnection provided on the front face of the semiconductor substrate for connection between the through-interconnection and the front electrode, wherein an insulating film is provided on an interior of the through-hole and on the front face of the semiconductor substrate, and wherein the through-interconnection and the front interconnection are provided on the insulating film.
Claim 10
Dependent Claim
117 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole; and a front interconnection provided on the front face of the semiconductor substrate for connection between the through-interconnection and the front electrode, wherein an insulating film is provided on an interior of the through-hole and on the front face of the semiconductor substrate, and wherein the through-interconnection and the front interconnection are provided on the insulating film.
Claim 11
Dependent Claim
116 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole; and a back-interconnection provided on the back face of the semiconductor substrate for connection between the through-interconnection and the back electrode, wherein an insulating film is provided on an interior of the through-hole and on the back face of the semiconductor substrate, and wherein the through-interconnection and the back interconnection are provided on the insulating film.
Claim 12
Dependent Claim
116 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode via a through-interconnection provided in the through-hole; and a back-interconnection provided on the back face of the semiconductor substrate for connection between the through-interconnection and the back electrode, wherein an insulating film is provided on an interior of the through-hole and on the back face of the semiconductor substrate, and wherein the through-interconnection and the back interconnection are provided on the insulating film.
Claim 13
Dependent Claim
87 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; and a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode through the through-hole, wherein the front electrode includes an electrode ad which is a portion of an internal interconnection exposed from an insulating film provided on the front face of the semiconductor substrate.
Claim 14
Dependent Claim
87 words
A semiconductor chip, comprising: a semiconductor substrate having a through-hole formed therein; a front electrode provided on a front face of the semiconductor substrate which is a device formation surface of the semiconductor substrate; and a back electrode provided on a back face of the semiconductor substrate and electrically connected to the front electrode through the through-hole, wherein the front electrode includes an electrode ad which is a portion of an internal interconnection exposed from an insulating film provided on the front face of the semiconductor substrate.
Claim 15
Dependent Claim
19 words
A semiconductor chip as set forth in claim 8 , wherein the through-hole is provided adjacent the electrode pad.
Claim 16
Dependent Claim
24 words
A semiconductor chip as set forth in claim 8 , wherein a bump is provided on the electrode pad as covering the electrode pad.
Claim 17
Dependent Claim
38 words
A semiconductor chip as set forth in claim 8 , wherein the through-hole is provided just below the electrode pad, and a through-interconnection is provided in the through-hole for connection between the back electrode and the electrode pad.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-10 | 2005-12-10 | 2006-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-10 | 2009-12-10 | 2010-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-10 | 2013-12-10 | 2014-06-11 | $7700.00 | Window Closed / Lapsed |