US6399522B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
PE-silane oxide particle performance improvement
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1998-05-11
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Granted: 2002-06-04
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Expires: 2018-05-11
Abstract
Abstract A method of forming a PE-silane oxide layer with a greatly reduced particle count is described. A semiconductor substrate is provided over which a silicon oxide film is to be formed. The silicon oxide film is formed by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds whereby the pre-flowing step prevents formation of particles on the silicon oxide film, and 2) thereafter depositing a silicon oxide film by chemical vapor deposition by flowing a silane gas into the deposition chamber to complete formation of a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit.
Inventors
- 👤 Chun-Ching Tsan
- 👤 Hung-Ju Chien
- 👤 Chun-Chang Chen
- 👤 Ying-Lang Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/02; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/65; H10P14/6502; H10P14/6512; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
108 words
A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising: providing a semiconductor substrate over which said silicon oxide film is to be formed; and forming said silicon oxide film by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds; wherein a silane gas is not present; and 2) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing a silane gas into said deposition chamber to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.
Claim 2
Independent Claim
108 words
A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising: providing a semiconductor substrate over which said silicon oxide film is to be formed; and forming said silicon oxide film by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds; wherein a silane gas is not present; and 2) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing a silane gas into said deposition chamber to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.
Claim 3
Dependent Claim
14 words
A method according to claim 1 wherein said non-silane gas comprises N 2 O.
Claim 4
Dependent Claim
14 words
A method according to claim 1 wherein said non-silane gas comprises N 2 .
Claim 5
Dependent Claim
18 words
A method according to claim 1 wherein said non-silane gas comprises N 2 O and N 2 .
Claim 6
Dependent Claim
36 words
A method according to claim 1 wherein said step of depositing said silicon oxide film is preceded by a stabilizing step comprising flowing N 2 O and SiH 4 gases with a radio frequency of zero.
Claim 7
Dependent Claim
31 words
A method according to claim 1 wherein said step of depositing said silicon oxide film comprises flowing N 2 O and SiH 4 gases with a radio frequency greater than zero.
Claim 8
Dependent Claim
14 words
A method according to claim 1 wherein said silane gas comprises SiH 4 .
Claim 9
Independent Claim
117 words
A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising: providing a semiconductor substrate over which said silicon oxide film is to be formed; and forming said silicon oxide film by the steps of: 1) flowing only N 2 gas and silane gas into a deposition chamber at a radio frequency of zero; and 2) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing N 2 O and said silane gas into said deposition chamber at a radio frequency greater than zero to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.
Claim 10
Independent Claim
117 words
A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising: providing a semiconductor substrate over which said silicon oxide film is to be formed; and forming said silicon oxide film by the steps of: 1) flowing only N 2 gas and silane gas into a deposition chamber at a radio frequency of zero; and 2) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing N 2 O and said silane gas into said deposition chamber at a radio frequency greater than zero to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.
Claim 11
Dependent Claim
23 words
A method according to claim 8 wherein said step of flowing said N 2 gas and said silane gas comprises a stabilization step.
Claim 12
Dependent Claim
19 words
A method according to claim 9 wherein said stabilization step prevents formation of particles on said silicon oxide film.
Claim 13
Dependent Claim
14 words
A method according to claim 8 wherein said silane gas comprises SiH 4 .
Claim 14
Independent Claim
147 words
A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising: providing a semiconductor substrate over which said silicon oxide film is to be formed; and forming said silicon oxide film by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds whereby said pre-flowing step prevents formation of particles on said silicon oxide film; 2) thereafter flowing N 2 O and a silane gas into said deposition chamber at a radio frequency of zero; and 3) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing said N 2 O gas and said silane gas into said deposition chamber at a radio frequency greater than zero to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.
Claim 15
Independent Claim
147 words
A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising: providing a semiconductor substrate over which said silicon oxide film is to be formed; and forming said silicon oxide film by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds whereby said pre-flowing step prevents formation of particles on said silicon oxide film; 2) thereafter flowing N 2 O and a silane gas into said deposition chamber at a radio frequency of zero; and 3) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing said N 2 O gas and said silane gas into said deposition chamber at a radio frequency greater than zero to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.
Claim 16
Dependent Claim
14 words
A method according to claim 12 wherein said non-silane gas comprises N 2 O.
Claim 17
Dependent Claim
14 words
A method according to claim 12 wherein said non-silane gas comprises N 2 .
Claim 18
Dependent Claim
17 words
A method according to claim 12 wherein said non-silane gas comprises N 2 and N 2 O.
Claim 19
Dependent Claim
14 words
A method according to claim 12 wherein said silane gas comprises SiH 4 .
References Cited (Backward Citations)
US5576076A
Cited
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