US6373136B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Damascene wiring structure and semiconductor device with damascene wirings
Assignee: Fujitsu Semiconductor Ltd
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Filing: 2000-12-14
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Granted: 2002-04-16
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Expires: 2020-12-14
Abstract
Abstract A damascene wiring structure having: a lower wiring structure; an interlayer insulating film covering the lower wiring structure; a wiring trench formed in the interlayer insulating film from an upper surface thereof, and a via hole passing through the interlayer insulating film from a lower surface of the wiring trench in an inner area thereof and reaching the lower wiring structure, the via hole having a diameter smaller than a width of the wiring trench; an insulating pillar pattern projecting upward from the lower surface of the wiring trench in an area outside of the via hole, the insulating pillar pattern being made of a same material as the interlayer insulating film, wherein a first occupied area factor of the insulating pillar pattern in a first area of the wiring trench near said via hole is higher than a second occupied area factor of the insulating pillar pattern in a second area of the wiring trench remote from the via hole; and a dual damascene wiring formed by filling the wiring trench and said via hole with conductive material. A damascene wiring structure having a high reliability and a semiconductor device having such a damascene wiring structure can be formed.
Inventors
- 👤 Satoshi Otsuka
- 👤 Akira Yamanoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/089; H10W20/084; H10W20/40; H10W20/41; H10W20/42; H10W20/435; H10W20/44; H10W20/4403; H10W20/4421
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
216 words
A semiconductor device, comprising: a semiconductor substrate; an integrated circuit structure formed on said semiconductor substrate; a multi-layer wiring structure formed above said integrated circuit structure; and a number of pads formed on said semiconductor substrate, wherein said multi-layer wiring structure comprises: a lower wiring structure; an interlayer insulating film covering said lower wiring structure; a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench; an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and a dual damascene wiring formed by filling said wiring trench and said via hole with conductive material.
Claim 2
Dependent Claim
216 words
A semiconductor device, comprising: a semiconductor substrate; an integrated circuit structure formed on said semiconductor substrate; a multi-layer wiring structure formed above said integrated circuit structure; and a number of pads formed on said semiconductor substrate, wherein said multi-layer wiring structure comprises: a lower wiring structure; an interlayer insulating film covering said lower wiring structure; a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench; an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and a dual damascene wiring formed by filling said wiring trench and said via hole with conductive material.
Claim 3
Dependent Claim
30 words
A semiconductor device according to claim 1 , wherein said plurality of pads include a power supply pad, and said dual damascene wiring is connected to the power supply pad.
Claim 4
Dependent Claim
179 words
A damascene wiring structure, comprising: a lower wiring structure; an interlayer insulating film covering said lower wiring structure; a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench; an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and a dual damascene wiring formed by embedding said wiring trench and said via hole with conductive material.
Claim 5
Dependent Claim
179 words
A damascene wiring structure, comprising: a lower wiring structure; an interlayer insulating film covering said lower wiring structure; a wiring trench formed in said interlayer insulating film from an upper surface thereof, and a via hole passing through said interlayer insulating film from a lower surface of said wiring trench in an inner area thereof and reaching said lower wiring structure, said via hole having a diameter smaller than a width of said wiring trench; an insulating pillar pattern projecting upward from the lower surface of said wiring trench in an area outside of said via hole, the insulating pillar pattern being made of a same material as said interlayer insulating film, wherein a first occupied area factor of said insulating pillar pattern in a first area of said wiring trench near said via hole is higher than a second occupied area factor of said insulating pillar pattern in a second area of said wiring trench remote from said via hole; and a dual damascene wiring formed by embedding said wiring trench and said via hole with conductive material.
Claim 6
Dependent Claim
21 words
A damascene wiring structure according to claim 3 , wherein said wiring trench has a width wider than about 2 μm.
Claim 7
Dependent Claim
22 words
A damascene wiring structure according to claim 4 , wherein the diameter of said via hole is about 1 μm or smaller.
Claim 8
Dependent Claim
26 words
A damascene wiring structure according to claim 3 , wherein said insulating pillar pattern is a plurality of insulating pillars disposed distributively near said via hole.
Claim 9
Dependent Claim
20 words
A damascene wiring structure according to claim 6 , wherein the first occupied area factor is about 10% or higher.
Claim 10
Dependent Claim
37 words
A damascene wiring structure according to claim 7 , wherein the first area of said wiring trench near said via hole contains said via hole and is a rectangle area having a side length of 2 μm.
Claim 11
Dependent Claim
37 words
A damascene wiring structure according to claim 7 , wherein the first area of said wiring trench near said via hole contains said via hole and is a rectangle area having a side length of 5 μm.
Claim 12
Dependent Claim
54 words
A damascene wiring structure according to claim 6 , wherein the plurality of insulating pillars are a plurality of first insulating pillars disposed generally at an equal pitch along at least one loop surrounding said via hole, defining a narrow area of said dual damascene wiring between each pair of adjacent first insulating pillars.
Claim 13
Dependent Claim
20 words
A damascene wiring structure according to claim 10 , wherein said at least one loop includes four or less loops.
Claim 14
Dependent Claim
38 words
A damascene wiring structure according to claim 10 , wherein the plurality of insulating pillars includes a plurality of second insulating pillars disposed outside of the plurality of first insulating pillars relative to lengthwise direction of said wiring.
Claim 15
Dependent Claim
25 words
A damascene wiring structure according to claim 3 , wherein said insulating pillar pattern includes a portion surrounding said via hole excepting a partial area.
Claim 16
Dependent Claim
70 words
A damascene wiring structure according to claim 13 , wherein said insulating pillar pattern includes a U-character shaped insulating pillar pattern surrounding said via hole, and said dual damascene wiring includes a narrow wiring extending along an opening area of the U-character and a wide wiring connected to the narrow wiring at a position remote from said via hole, the wide wiring having a width wider than the narrow wiring.
Claim 17
Dependent Claim
32 words
A damascene wiring structure according to claim 14 , wherein the narrow wiring has a width five times the diameter of said via hole or narrower, or about 1 μm or narrower.
Claim 18
Dependent Claim
32 words
A damascene wiring structure according to claim 14 , wherein the narrow wiring has a length of 2 μm or longer from an end of said via hole to the wide wiring.
Claim 19
Dependent Claim
25 words
A damascene wiring structure according to claim 13 , wherein said insulating pillar pattern includes two insulating pillar stripes disposed to sandwich said via hole.
Claim 20
Dependent Claim
67 words
A damascene wiring structure according to claim 17 , wherein said dual damascene wiring includes a narrow wiring connected to said via hole and sandwiched between the two insulating pillar stripes and wide wiring connected to the narrow wiring at areas near opposite ends of the two insulating pillar stripes and remote from said via hole, the wide wiring having a width wider than the narrow wiring.
Claim 21
Dependent Claim
32 words
A damascene wiring structure according to claim 18 , wherein the narrow wiring has a width five times the diameter of said via hole or narrower, or about 1 μm or narrower.
Claim 22
Dependent Claim
32 words
A damascene wiring structure according to claim 18 , wherein the narrow wiring has a length of 2 μm or longer from an end of said via hole to the wide wiring.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-04-15 | 2005-10-15 | 2006-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-04-15 | 2009-10-15 | 2010-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-04-15 | 2013-10-15 | 2014-04-16 | $7700.00 | Window Closed / Lapsed |