US6355582B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon nitride film formation method
Assignee: Tokyo Electron Ltd
•
Filing: 2000-09-14
•
Granted: 2002-03-12
•
Expires: 2020-09-14
Abstract
Abstract In a silicon nitride film formation method, a substrate to be subjected to film formation is heated, and silicon tetrachloride and ammonia gases are supplied to the substrate heated to a predetermined temperature. The ratio of the partial pressure of the silicon tetrachloride gas to that of the ammonia gas is set to not less than 0.5.
Inventors
- 👤 Keizo Hosoda
- 👤 Nobuaki Shigematsu
- 👤 Yusuke Muraki
- 👤 Atsushi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
75 words
A silicon nitride film formation method comprising the steps of: heating a substrate to be subjected to film formation; and supplying silicon tetrachloride and ammonia gases to the substrate heated to a predetermined temperature and forming a silicon nitride film having a thickness no greater than 3 nm, wherein a ratio of a partial pressure of the silicon tetrachloride gas to a partial pressure of the ammonia gas is set to not less than 0.5.
Claim 2
Dependent Claim
75 words
A silicon nitride film formation method comprising the steps of: heating a substrate to be subjected to film formation; and supplying silicon tetrachloride and ammonia gases to the substrate heated to a predetermined temperature and forming a silicon nitride film having a thickness no greater than 3 nm, wherein a ratio of a partial pressure of the silicon tetrachloride gas to a partial pressure of the ammonia gas is set to not less than 0.5.
Claim 3
Dependent Claim
16 words
The method according to claim 1 , wherein the predetermined temperature is 600 to 700° C.
Claim 4
Dependent Claim
22 words
The method according to claim 1 , wherein the thickness of the silicon nitride film is set to 1 to 3 nm.
Claim 5
Dependent Claim
25 words
The method according to claim 1 , wherein the silicon nitride film is formed on the substrate to produce a capacitor of an integrated circuit.
Claim 6
Dependent Claim
27 words
The method according to claim 1 , wherein the silicon nitride film is formed on a gate oxide film of an integrated circuit formed on the substrate.
References Cited (Backward Citations)
DE2723501A1
Cited
JPS6089575A
Cited
US5877073A
Cited
JPH1174485A
Cited
US6146938A
Cited
JP2000100809A
Cited
JP2000100812A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-03-11 | 2005-09-10 | 2006-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-03-11 | 2009-09-10 | 2010-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-03-11 | 2013-09-10 | 2014-03-12 | $7700.00 | Window Closed / Lapsed |