US6146938A
Expired / Lapsed
US
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Method of fabricating semiconductor device
Assignee: Toshiba Corp
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Filing: 1999-06-28
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Granted: 2000-11-14
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Expires: 2019-06-28
Abstract
Abstract A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.
Inventors
- 👤 Shigehiko Saida
- 👤 Yoshitaka Tsunashima
- 👤 Tsutomu Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:47
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0387; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/6302; H10P14/6316; H10P14/6322; H10P14/668; H10P14/6681
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
74 words
A method of fabricating a semiconductor device, comprising the steps of: removing an oxide film formed on a surface of a semiconductor substrate; doping an impurity into the surface of said semiconductor substrate to form an impurity diffusion layer as a first capacitor electrode; forming a capacitor insulating film on said impurity diffusion layer in a condition in which no oxide film grows; and forming a second capacitor electrode on said capacitor insulating film.
Claim 2
Independent Claim
74 words
A method of fabricating a semiconductor device, comprising the steps of: removing an oxide film formed on a surface of a semiconductor substrate; doping an impurity into the surface of said semiconductor substrate to form an impurity diffusion layer as a first capacitor electrode; forming a capacitor insulating film on said impurity diffusion layer in a condition in which no oxide film grows; and forming a second capacitor electrode on said capacitor insulating film.
Claim 3
Dependent Claim
28 words
A method according to claim 1, wherein the step of forming said capacitor insulating film comprises the step of forming a silicon nitride film by chemical vapor deposition.
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein the step of forming said capacitor insulting film comprises the step of forming a first silicon nitride film by thermal nitridation.
Claim 5
Dependent Claim
35 words
A method according to claim 3, wherein the step of forming said capacitor insulating film comprises the step of forming a second silicon nitride film on said first silicon nitride film by chemical vapor deposition.
Claim 6
Dependent Claim
72 words
A method according to claim 1, wherein the step of forming said capacitor insulating film comprises the step of repeating a series of heat treatment steps a plurality of times, the series of heat treatment steps including a first heat treatment step performed in a first gas ambient containing silicon and not containing nitrogen and a second heat treatment step performed in a second gas ambient containing nitrogen and not containing silicon.
Claim 7
Dependent Claim
26 words
A method according to claim 5, wherein the first gas ambient contains a gas of at least one of silicon tetrachloride, silicon trichloride, and silicon dichloride.
Claim 8
Dependent Claim
26 words
A method according to claim 5, wherein the second gas ambient contains a gas of at least one of ammonia, ammonia trifluoride, hydrazine, dimethylhydrazine, and monomethylhydrazine.
Claim 9
Dependent Claim
22 words
A method according to claim 5, wherein the surface of said impurity diffusion layer is nitrided before the first heat treatment step.
Claim 10
Dependent Claim
27 words
A method according to claim 1, wherein said first and second capacitor electrodes are a plate electrode and a storage node electrode, respectively, of a trench capacitor.
Claim 11
Dependent Claim
44 words
A method according to claim 1, wherein the condition in which no oxide film grows is realized by forming said impurity diffusion layer in a vessel and successively forming said capacitor insulating film in said vessel without unloading said semiconductor substrate from said vessel.
Claim 12
Dependent Claim
14 words
A method according to claim 1, wherein said oxide film is a native film.
Claim 13
Dependent Claim
14 words
A method according to claim 1, wherein said semiconductor substrate is a silicon substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |