US6333565B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
Assignee: Seiko Epson Corp
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Filing: 1999-03-19
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Granted: 2001-12-25
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Expires: 2019-03-19
Abstract
Abstract A semiconductor device comprising: a semiconductor element having a plurality of electrodes; a passivation film formed on the semiconductor element in a region avoiding at least a part of each of the electrodes; a conductive foil provided at a given spacing from the surface on which the passivation film is formed; an external electrodes formed on the conductive foil; intermediate layer formed between the passivation film and the conductive foil to support the conductive foil; and wires electrically connecting the electrodes to the conductive foil; wherein a depression tapered in a direction from the conductive foil to the passivation film if formed under a part of the conductive foil that includes the connection with the external electrodes.
Inventors
- 👤 Nobuaki Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:07
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/129; H10W90/00; H10W90/701; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/654; H10W70/656; H10W70/67; H10W70/68; H10W72/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/241; H10W72/244; H10W72/251; H10W72/29; H10W72/90; H10W72/921; H10W72/922; H10W72/923; H10W72/931; H10W72/932; H10W72/941; H10W72/944; H10W72/9445; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
122 words
A semiconductor device comprising: a semiconductor element that includes a plurality of electrodes; a passivation film formed on a surface of said semiconductor element in a region avoiding at least a part of each of said electrodes; a conductive foil formed at a given spacing from the surface on which said passivation film is formed; external electrodes formed on said conductive foil; an intermediate layer formed between said passivation film and said conductive foil to support said conductive foil; and wires electrically connecting said electrodes to said conductive foil; wherein a depression opening between said conductive foil to said passivation film is formed in said intermediate layer under a part of said conductive foil that includes the connection with said external electrodes.
Claim 2
Dependent Claim
122 words
A semiconductor device comprising: a semiconductor element that includes a plurality of electrodes; a passivation film formed on a surface of said semiconductor element in a region avoiding at least a part of each of said electrodes; a conductive foil formed at a given spacing from the surface on which said passivation film is formed; external electrodes formed on said conductive foil; an intermediate layer formed between said passivation film and said conductive foil to support said conductive foil; and wires electrically connecting said electrodes to said conductive foil; wherein a depression opening between said conductive foil to said passivation film is formed in said intermediate layer under a part of said conductive foil that includes the connection with said external electrodes.
Claim 3
Dependent Claim
28 words
The semiconductor device as defined in claim 1 , wherein said depression is filled with a resin having a Young's modulus lower than that of said intermediate layer.
Claim 4
Dependent Claim
54 words
The semiconductor device as defined in claim 2 , wherein said wires are formed on the surface on which said passivation film is formed, and are positioned on the bottom surface of said intermediate layer depression; and wherein said resin has a conducting filler added, and electrically connects said wires to said conductive foil.
Claim 5
Dependent Claim
32 words
The semiconductor device as defined in claim 3 , wherein said conductive foil has a hole positioned within an opening edge of said depression and avoiding the connection with said external electrodes.
Claim 6
Dependent Claim
55 words
The semiconductor device as defined in claim 3 , further comprising a substrate with a surface on which said conductive foil is formed, said surface facing toward said intermediate layer, wherein said substrate has a penetrating hole over said depression; and wherein said external electrodes are formed on said conductive foil through said penetrating hole.
Claim 7
Dependent Claim
56 words
The semiconductor device as defined in claim 3 , wherein a substrate formed of a flexible material is provided between said intermediate layer and said conductive foil; wherein said substrate has a penetrating hole in a region avoiding above said depression; and wherein said wires and said conductive foil are electrically connected through said penetrating hole.
Claim 8
Dependent Claim
41 words
The semiconductor device as defined in claim 1 , wherein said intermediate layer has a bevel between said electrode and said conductive foil; and wherein said wires are formed on said bevel to electrically connect said electrode to said conductive foil.
Claim 9
Dependent Claim
32 words
The semiconductor device as defined in claim 7 , wherein said conductive foil has a hole positioned within an opening edge of said depression and avoiding the connection with said external electrodes.
Claim 10
Dependent Claim
55 words
The semiconductor device as defined in claim 7 , further comprising a substrate with a surface on which said conductive foil is formed, said surface facing toward said intermediate layer, wherein said substrate has a penetrating hole over said depression; and wherein said external electrodes are formed on said conductive foil through said penetrating hole.
Claim 11
Dependent Claim
56 words
The semiconductor device as defined in claim 7 , wherein a substrate formed of a flexible material is provided between said intermediate layer and said conductive foil; wherein said substrate has a penetrating hole in a region avoiding above said depression; and wherein said wires and said conductive foil are electrically connected through said penetrating hole.
Claim 12
Dependent Claim
19 words
The semiconductor device as defined in claim 1 , wherein said intermediate layer is formed of a flexible material.
Claim 13
Dependent Claim
32 words
The semiconductor device as defined in claim 1 , wherein said conductive foil has a hole positioned within an opening edge of said depression and avoiding the connection with said external electrodes.
Claim 14
Dependent Claim
55 words
The semiconductor device as defined in claim 1 , further comprising a substrate with a surface on which said conductive foil is formed, said surface facing toward said intermediate layer, wherein said substrate has a penetrating hole over said depression; and wherein said external electrodes are formed on said conductive foil through said penetrating hole.
Claim 15
Dependent Claim
56 words
The semiconductor device as defined in claim 1 , wherein a substrate formed of a flexible material is provided between said intermediate layer and said conductive foil; wherein said substrate has a penetrating hole in a region avoiding above said depression; and wherein said wires and said conductive foil are electrically connected through said penetrating hole.
Claim 16
Dependent Claim
19 words
The semiconductor device as defined in claim 1 , wherein said conductive foil and said wires are formed integrally.
Claim 17
Dependent Claim
19 words
The semiconductor device as defined in claim 1 , wherein said conductive foil and said wires are formed separately.
Claim 18
Dependent Claim
16 words
A circuit board on which is mounted the semiconductor device as defined in claim 1 .
Claim 19
Dependent Claim
13 words
An electronic instrument having the circuit board as defined in claim 17 .
Claim 20
Dependent Claim
18 words
The semiconductor device as defined in claim 1 , wherein said depression in said intermediate layer is concave.
Claim 21
Independent Claim
156 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a semiconductor element that includes a plurality of electrodes and a passivation film that is formed on a surface of said semiconductor element in a region avoiding at least a part of each of said electrodes; forming a conductive foil at a given spacing from the surface on which said passivation film is formed; forming external electrodes on said conductive foil; forming an intermediate layer between said passivation film and said conductive foil to support said conductive foil; forming a depression opening between said conductive foil to said passivation film in said intermediate layer under a part of said conductive foil that includes the connection with said external electrodes and in a position to avoid said electrodes; and forming wires that connect electrically said electrode to said conductive foil; said external electrodes are formed on said conductive foil in a position above said depression.
Claim 22
Independent Claim
156 words
A method of manufacturing a semiconductor device, comprising the steps of: providing a semiconductor element that includes a plurality of electrodes and a passivation film that is formed on a surface of said semiconductor element in a region avoiding at least a part of each of said electrodes; forming a conductive foil at a given spacing from the surface on which said passivation film is formed; forming external electrodes on said conductive foil; forming an intermediate layer between said passivation film and said conductive foil to support said conductive foil; forming a depression opening between said conductive foil to said passivation film in said intermediate layer under a part of said conductive foil that includes the connection with said external electrodes and in a position to avoid said electrodes; and forming wires that connect electrically said electrode to said conductive foil; said external electrodes are formed on said conductive foil in a position above said depression.
Claim 23
Dependent Claim
105 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein: a substrate is provided, having a penetrating hole, and having said conductive foil adhered to a position including the position over said penetrating hole; said intermediate layer is formed on the surface on which said passivation film is formed, and said depression is formed in said intermediate layer; thereafter, said substrate is mounted on said intermediate layer so that said penetrating hole is positioned over said depression and that said conductive foil is opposed to said depression; and said external electrodes are formed on said conductive foil through said penetrating hole.
Claim 24
Dependent Claim
99 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein: a substrate formed of a flexible material and having a penetrating hole is provided; said intermediate layer is formed on the surface on which said passivation film is formed, said depression is formed on said intermediate layer, and said wires are formed on said intermediate layer; and said substrate is mounted on said intermediate layer with said penetrating hole positioned over said wires, said conductive foil is formed on said substrate, and said wires and said conductive foil are electrically connected through said penetrating hole.
Claim 25
Dependent Claim
59 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein said intermediate layer is formed on the surface on which said passivation film is formed, said conductive foil is formed on said intermediate layer, a hole is formed in said conductive foil, and said intermediate layer is etched through said hole to form said depression.
Claim 26
Dependent Claim
36 words
The method of manufacturing a semiconductor device as defined in claim 23 , wherein said intermediate layer is formed of a material which can be etched under conditions in which said semiconductor element cannot be etched.
Claim 27
Dependent Claim
63 words
The method of manufacturing a semiconductor device as defined in claim 24 , further comprising: before the step of etching said intermediate layer, a step in which said external electrodes are formed on said conductive foil, and on said external electrodes an electrode covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer.
Claim 28
Dependent Claim
63 words
The method of manufacturing a semiconductor device as defined in claim 23 , further comprising: before the step of etching said intermediate layer, a step in which said external electrodes are formed on said conductive foil, and on said external electrodes an electrode covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer.
Claim 29
Dependent Claim
92 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein: said passivation film is etched under the etching conditions of said intermediate layer; and on said passivation film, a covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer, said intermediate layer is formed on said covering layer, said conductive foil is formed on said intermediate layer, a hole is formed in said conductive foil, and said intermediate layer is etched through said hole to form said depression.
Claim 30
Dependent Claim
63 words
The method of manufacturing a semiconductor device as defined in claim 27 , further comprising: before the step of etching said intermediate layer, a step in which said external electrodes are formed on said conductive foil, and on said external electrodes an electrode covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer.
Claim 31
Dependent Claim
140 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein; said passivation film is etched under the etching conditions of said intermediate layer; on said passivation film, a first covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer; said intermediate layer is formed on said first covering layer; said conductive foil and wires are formed on said intermediate layer, and a hole is formed in said conductive foil; a solder resist layer is formed on said wires; on said solder resist layer, a second covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer; and said intermediate layer is etched as far as the underneath of said conductive foil through said hole in said-conductive foil.
Claim 32
Dependent Claim
63 words
The method or manufacturing a semiconductor device as defined in claim 29 , further comprising: before the step of etching said intermediate layer, a step in which said external electrodes are formed on said conductive foil, and on said external electrodes an electrode covering layer is formed of a material which is not readily etched under the etching conditions of said intermediate layer.
Claim 33
Dependent Claim
37 words
The method of manufacturing a semiconductor device as defined in claim 20 , further comprising a step in which said depression is filled with a resin having a Young's modulus lower than that of said intermediate layer.
Claim 34
Dependent Claim
22 words
The method of manufacturing a semiconductor device as defined in claim 20 , wherein said depression in said intermediate layer is concave.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-24 | 2005-06-25 | 2005-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-24 | 2009-06-25 | 2009-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-24 | 2013-06-25 | 2013-12-25 | $7700.00 | Window Closed / Lapsed |