US6330165B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Murata Manufacturing Co Ltd
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Filing: 1999-07-01
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Granted: 2001-12-11
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Expires: 2019-07-01
Abstract
Abstract In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
Inventors
- 👤 Iwamichi Kohjiro
- 👤 Yasuhiro Nunogawa
- 👤 Sakae Kikuchi
- 👤 Shizuo Kondo
- 👤 Tetsuaki Adachi
- 👤 Osamu Kagaya
- 👤 Kenji Sekine
- 👤 Eiichi Hase
- 👤 Kiichi Yamashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:02
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H03; H03F; H03F1/00; H03F1/56; H03F3/00; H03F3/189; H03F3/19; H03F3/195; H03F3/20; H03F3/21; H03F3/213; H03F3/60; H03F3/602; H03F3/604; H10W42/00; H10W42/20; H10W42/261; H10W42/265; H10W44/00; H10W44/20; H10W44/501; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/657; H10W70/658; H10W70/67; H10W70/68; H10W70/685; H10W76/00; H10W76/10; H10W76/12; H10W90/00; H03F2200/00; H03F2200/12; H03F2200/168; H03F2200/222; H03F2200/255; H03F2200/318; H03F2200/387; H03F2200/408; H03F2200/411; H03F2200/423; H03F2200/451; H03F2200/543; H03H; H03H7/00; H03H7/38; H03H7/383; H05; H05K; H05K1/00; H05K1/02; H05K1/0213; H05K1/0237; H05K1/0243; H05K1/0296; H05K1/0298; H05K1/18; H05K1/182; H05K1/183; H05K3/00; H05K3/40; H05K3/403; H10W44/203; H10W44/206; H10W44/216; H10W44/226; H10W44/234; H10W70/654; H10W70/655; H10W70/682; H10W72/071; H10W72/075; H10W72/07551; H10W72/07552; H10W72/07554; H10W72/50; H10W72/521; H10W72/522; H10W72/541; H10W72/5445; H10W72/547; H10W72/5473; H10W72/5475; H10W72/551; H10W72/552; H10W72/5525; H10W72/555; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/931; H10W72/932; H10W72/951; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
278 words
A high-frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip of a quadrilateral shape, being mounted on said one surface of said substrate, said semiconductor chip having a first pair of opposed edges and a second pair of opposed edges, said semiconductor chip having an amplifier circuit having an input and an output, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends from said input of said amplifier circuit to said first electrode of said substrate so that said first bonding wire and one of said first pair of opposed edges of said semiconductor chip intersect each other, and wherein said second bonding wire extends from said output of said amplifier circuit to said second electrode of said substrate so that said second bonding wire and one of said second pair of opposed edges of said semiconductor chip intersect each other.
Claim 2
Dependent Claim
278 words
A high-frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip of a quadrilateral shape, being mounted on said one surface of said substrate, said semiconductor chip having a first pair of opposed edges and a second pair of opposed edges, said semiconductor chip having an amplifier circuit having an input and an output, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends from said input of said amplifier circuit to said first electrode of said substrate so that said first bonding wire and one of said first pair of opposed edges of said semiconductor chip intersect each other, and wherein said second bonding wire extends from said output of said amplifier circuit to said second electrode of said substrate so that said second bonding wire and one of said second pair of opposed edges of said semiconductor chip intersect each other.
Claim 3
Dependent Claim
37 words
A high-frequency power amplifier module according to claim 1 , wherein said wherein said output node of said first transistor and said input node of said second transistor are coupled to each other via a coupling circuit.
Claim 4
Dependent Claim
72 words
A high-frequency power amplifier module according to claim 1 , wherein each of said first and second transistors includes a field effect transistor having a gate, a source and a drain, and wherein said input node of said first transistor is said gate of said field effect transistor of said first transistor, and said output node of said second transistor is said drain of said field effect transistor of said second transistor.
Claim 5
Dependent Claim
22 words
A high-frequency power amplifier module according to claim 1 , wherein each of said first and second transistors is a bipolar transistor.
Claim 6
Dependent Claim
53 words
A high-frequency power amplifier module according to claim 1 , wherein a distance between said input and said output of said amplifier circuit is at least 0.3 mm, and wherein a coefficient of stability of said first and, wherein a coefficient of stability of said first and second transistors is at least 1.
Claim 7
Dependent Claim
288 words
A high-frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip of a quadrilateral shape, being mounted on said one surface of said substrate, said semiconductor chip having a first pair of opposed edges and a second pair of opposed edges, said semiconductor chip having an amplifier circuit having an input and an output, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a plurality of second bonding wires electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends from said input of said amplifier circuit to said first electrode of said substrate so that said first bonding wire and one of said first pair of opposed edges of said semiconductor chip intersect each other, and wherein each of said plurality of second bonding wires extends from said output of said amplifier circuit to said second electrode of said substrate so that each of said plurality of second bonding wires and one of said second pair of opposed edges of said semiconductor chip intersect each other.
Claim 8
Dependent Claim
288 words
A high-frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip of a quadrilateral shape, being mounted on said one surface of said substrate, said semiconductor chip having a first pair of opposed edges and a second pair of opposed edges, said semiconductor chip having an amplifier circuit having an input and an output, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a plurality of second bonding wires electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends from said input of said amplifier circuit to said first electrode of said substrate so that said first bonding wire and one of said first pair of opposed edges of said semiconductor chip intersect each other, and wherein each of said plurality of second bonding wires extends from said output of said amplifier circuit to said second electrode of said substrate so that each of said plurality of second bonding wires and one of said second pair of opposed edges of said semiconductor chip intersect each other.
Claim 9
Dependent Claim
35 words
A high-frequency power amplifier module according to claim 6 , wherein said output node of said first transistor and said input node of said second transistor are coupled to each other via a coupling circuit.
Claim 10
Dependent Claim
72 words
A high-frequency power amplifier module according to claim 6 , wherein each of said first and second transistors includes a field effect transistor having a gate, a source and a drain, and wherein said input node of said first transistor is said gate of said field effect transistor of said first transistor, and said output node of said second transistor is said drain of said field effect transistor of said second transistor.
Claim 11
Dependent Claim
21 words
A high-frequency power amplifier module according to claim 6 , wherein each of said first and second transistors a bipolar transistor.
Claim 12
Dependent Claim
44 words
A high-frequency power amplifier module according to claim 6 , wherein a distance between said input and said output of said amplifier circuit is at least 0.3 mm, and wherein a coefficient of stability of said first and second transistors is at least 1.
Claim 13
Dependent Claim
224 words
A high frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip having an amplifier circuit having an input and an output, being mounted on said one surface of said substrate, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting, said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends in a first direction, and said second bonding wire extends in a second direction which is a different direction from said first direction, and wherein an angle defined by said first and second directions in a plane view is in the range of 72 degrees to 180 degrees.
Claim 14
Dependent Claim
224 words
A high frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip having an amplifier circuit having an input and an output, being mounted on said one surface of said substrate, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting, said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends in a first direction, and said second bonding wire extends in a second direction which is a different direction from said first direction, and wherein an angle defined by said first and second directions in a plane view is in the range of 72 degrees to 180 degrees.
Claim 15
Dependent Claim
35 words
A high-frequency power amplifier module according to claim 11 , wherein said output node of said first transistor and said input node of said second transistor are coupled to each other via a coupling circuit.
Claim 16
Dependent Claim
72 words
A high-frequency power amplifier module according to claim 11 , wherein each of said first and second transistors includes a field effect transistor having a gate, a source and a drain, and wherein said input node of said first transistor is said gate of said field effect transistor of said first transistor, and said output node of said second transistor is said drain of said field effect transistor of said second transistor.
Claim 17
Dependent Claim
22 words
A high-frequency power amplifier module according to claim 11 , wherein each of said first and second transistors is a bipolar transistor.
Claim 18
Dependent Claim
44 words
A high-frequency power amplifier module according to claim 11 , wherein a distance between said input and said output of said amplifier circuit is at least 0.3 mm, and wherein a coefficient of stability of said first and second transistors is at least 1.
Claim 19
Dependent Claim
214 words
A high-frequency power amplifier module comprising (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip having an amplifier circuit having an input and an output, being mounted on said one surface of said substrate, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein an angle defined by a first direction extending from said first electrode to said input of said amplifier circuit and a second direction extending from said second electrode to said output of said amplifier circuit is in the range of 72 to 180 degrees.
Claim 20
Dependent Claim
214 words
A high-frequency power amplifier module comprising (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip having an amplifier circuit having an input and an output, being mounted on said one surface of said substrate, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein an angle defined by a first direction extending from said first electrode to said input of said amplifier circuit and a second direction extending from said second electrode to said output of said amplifier circuit is in the range of 72 to 180 degrees.
Claim 21
Dependent Claim
35 words
A high-frequency power amplifier module according to claim 16 , wherein said output node of said first transistor and said input node of said second transistor are coupled to each other via a coupling circuit.
Claim 22
Dependent Claim
73 words
A high-frequency power amplifier module according to claim 16 , wherein each of said first and second transistors includes a field effect transistor having a gate, a source and a drain, and wherein said input node of said firs t transistor is said gate of said field effect transistor of said first transistor, and said output node of said second transistor is said drain of said field effect transistor of said second transistor.
Claim 23
Dependent Claim
21 words
A high-frequency power amplifier module according to claim 16 , wherein each of said first and second transistors a bipolar transistor.
Claim 24
Dependent Claim
44 words
A high-frequency power amplifier module according to claim 16 , wherein a distance between said input and said output of said amplifier circuit is at least 0.3 mm, and wherein a coefficient of stability of said first and second transistors is at least 1.
Claim 25
Dependent Claim
217 words
A high-frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip having an amplifier circuit having an input and an output, being mounted on said one surface of said substrate, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends in a first direction, and said second bonding wire extends in a second direction which is a different direction from said first direction, and wherein an angle defined by said first and second directions in a plane view is substantially 90 degrees.
Claim 26
Dependent Claim
217 words
A high-frequency power amplifier module comprising: (1) a substrate having a first electrode and a second electrode formed on one surface thereof; (2) a semiconductor chip having an amplifier circuit having an input and an output, being mounted on said one surface of said substrate, said amplifier circuit having a first transistor and a second transistor, each of said first and second transistors having an input node and an output node, said output node of said first transistor being coupled to said input node of said second transistor, said input of said amplifier circuit being coupled to said input node of said first transistor, said output of said amplifier circuit being coupled to said output node of said second transistor; (3) a first bonding wire electrically connecting said first electrode of said substrate with said input of said amplifier circuit of said semiconductor chip; and (4) a second bonding wire electrically connecting said second electrode of said substrate with said output of said amplifier circuit of said semiconductor chip; wherein said first bonding wire extends in a first direction, and said second bonding wire extends in a second direction which is a different direction from said first direction, and wherein an angle defined by said first and second directions in a plane view is substantially 90 degrees.
Claim 27
Dependent Claim
35 words
A high-frequency power amplifier module according to claim 21 , wherein said output node of said first transistor and said input node of said second transistor are coupled to each other via a coupling circuit.
Claim 28
Dependent Claim
73 words
A high frequency power amplifier module according to claim 21 , wherein each of said first and second transistors includes a field effect transistor having a gate, a source and a drain, and wherein said input node of said first transistor is said gate of said field effect transistor of said first transistor, and said output node of said second transistor is said drain of said field effect transistor of said second transistor.
Claim 29
Dependent Claim
23 words
A high frequency power amplifier module according to claim 21 , wherein each of said first and second transistors is a bipolar transistor.
Claim 30
Dependent Claim
44 words
A high-frequency power amplifier module according to claim 21 , wherein a distance between said input and said output of said amplifier circuit is at least 0.3 mm, and wherein a coefficient of stability of said first and second transistors is at least 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-10 | 2005-06-11 | 2005-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-10 | 2009-06-11 | 2009-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-10 | 2013-06-11 | 2013-12-11 | $7700.00 | Window Closed / Lapsed |