Patent US6319858B1 successfully refreshed from Google Patents.
US6319858B1
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Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
Assignee: Nano-Architect Research Corp
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Filing: 2000-07-11
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Granted: 2001-11-20
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Expires: 2020-07-11
Abstract
Abstract Disclosed is a non-solvent method for reducing a dielectric constant of a dielectric film. The dielectric film, which can be formed on a substrate by a spin-on coating or a chemical vapor deposition (CVD), is placed in an atmosphere of an inert gas at a high pressure or in a supercritical fluid state, and then the pressure of the atmosphere is rapidly released to form nanopores on the surface of the dielectric film, whereby the dielectric constant thereof is reduced.
Inventors
- 👤 Hong-Ji Lee
- 👤 David Guang-Kai Jeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/665
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
56 words
A non-solvent method for reducing a dielectric constant of a non-solvent dielectric film, comprising the steps of: (a) placing the solvent-free dielectric film in an atmosphere of an inert gas at a high pressure; and (b) making the pressure of the atmosphere of the inert gas rapidly released to form pores on the solvent-free dielectric film.
Claim 2
Dependent Claim
56 words
A non-solvent method for reducing a dielectric constant of a non-solvent dielectric film, comprising the steps of: (a) placing the solvent-free dielectric film in an atmosphere of an inert gas at a high pressure; and (b) making the pressure of the atmosphere of the inert gas rapidly released to form pores on the solvent-free dielectric film.
Claim 3
Dependent Claim
20 words
The method according to claim 1 , wherein the inert gas has a property not reactive with the dielectric film.
Claim 4
Dependent Claim
52 words
The method according to claim 1 , wherein the inert gas comprises a material selected from the group consisting of CO 2 , N 2 , He, Ar, C 2 H 6 , C 3 H 8 , C 2 H 4 , C 3 H 6 , and the mixtures thereof.
Claim 5
Dependent Claim
25 words
The method according to claim 1 , wherein the dielectric film comprises a low dielectric constant inorganic material deposited by a chemical vapor deposition (CVD).
Claim 6
Dependent Claim
30 words
The method according to claim 4 , wherein the dielectric film comprises a low dielectric constant inorganic material selected from the group consisting of SiOF, α-CF, SiOC, and the like.
Claim 7
Dependent Claim
23 words
The method according to claim 1 , wherein the dielectric film comprises a low dielectric constant organic polymer formed by a spin-on coating.
Claim 8
Dependent Claim
30 words
The method according to claim 6 , wherein the dielectric film comprises a low dielectric constant organic polymer selected from the group consisting of polyimide, polytetrafluoroethylene (PTFE), and the like.
Claim 9
Dependent Claim
28 words
The method according to claim 1 , wherein the atmosphere of the inert gas has a pressure close to or exceeding a critical pressure of the inert gas.
Claim 10
Dependent Claim
28 words
The method according to claim 8 , wherein the atmosphere of the inert gas has a temperature close to or exceeding a critical temperature of the inert gas.
Claim 11
Dependent Claim
23 words
The method according to claim 8 , wherein the atmosphere of the inert gas comprises the inert gas in a supercritical fluid state.
Claim 12
Dependent Claim
33 words
The method according to claim 1 , wherein the pressure of the atmosphere of the inert gas is reduced at a rate of between 5 psi/sec and 110 psi/sec in the step (b).
Claim 13
Dependent Claim
23 words
The method according to claim 1 , wherein the pores have a diameter in a range of between 5 nm and 80 nm.
Claim 14
Dependent Claim
23 words
The method according to claim 12 , wherein the pores have a diameter in a range of between 5 nm and 50 nm.
Claim 15
Dependent Claim
28 words
The method according to claim 1 , further comprising the steps (a) and (b) in repeat with n times, where n is an integer not smaller than 1.
Claim 16
Dependent Claim
68 words
A non-solvent method for producing a low dielectric constant porous film, comprising the steps of: (a) forming a solvent-free dielectric film on a semiconductor substrate; (b) placing the semiconductor substrate with the solvent-free dialectic film in an atmosphere of an inert gas at a high pressure; and (c) making the pressure of the atmosphere of the inert gas rapidly released to form pores on the solvent-free dielectric film.
Claim 17
Dependent Claim
68 words
A non-solvent method for producing a low dielectric constant porous film, comprising the steps of: (a) forming a solvent-free dielectric film on a semiconductor substrate; (b) placing the semiconductor substrate with the solvent-free dialectic film in an atmosphere of an inert gas at a high pressure; and (c) making the pressure of the atmosphere of the inert gas rapidly released to form pores on the solvent-free dielectric film.
Claim 18
Dependent Claim
24 words
The method according to claim 15 , further comprising the steps (a) to (c) in repeat until the dielectric film has a selected thickness.
Claim 19
Dependent Claim
35 words
The method according to claim 15 , wherein the semiconductor substrate with the dielectric film is placed in a high-pressure chamber and the inert gas is introduced into the high-pressure chamber in the step (b).
Claim 20
Dependent Claim
20 words
The method according to claim 15 , wherein the inert gas has a property not reactive with the dielectric film.
Claim 21
Dependent Claim
52 words
The method according to claim 15 , wherein the inert gas comprises a material selected from the group consisting of CO 2 , N 2 , He, Ar, C 2 H 6 , C 3 H 8 , C 2 H 4 , C 3 H 6 , and the mixtures thereof.
Claim 22
Dependent Claim
25 words
The method according to claim 15 , wherein the dielectric film comprises a low dielectric constant inorganic material deposited by a chemical vapor deposition (CVD).
Claim 23
Dependent Claim
30 words
The method according to claim 20 , wherein the dielectric film comprises a low dielectric constant inorganic material selected from the group consisting of SiOF, α-CF, SiOC, and the like.
Claim 24
Dependent Claim
23 words
The method according to claim 15 , wherein the dielectric film comprises a low dielectric constant organic polymer formed by a spin-on coating.
Claim 25
Dependent Claim
30 words
The method according to claim 22 , wherein the dielectric film comprises a low dielectric constant organic polymer selected from the group consisting of polyimide, polytetrafluoroethylene (PTFE), and the like.
Claim 26
Dependent Claim
28 words
The method according to claim 15 , wherein the atmosphere of the inert gas has a pressure close to or exceeding a critical pressure of the inert gas.
Claim 27
Dependent Claim
28 words
The method according to claim 24 , wherein the atmosphere of the inert gas has a temperature close to or exceeding a critical temperature of the inert gas.
Claim 28
Dependent Claim
23 words
The method according to claim 24 , wherein the atmosphere of the inert gas comprises the inert gas in a supercritical fluid state.
Claim 29
Dependent Claim
33 words
The method according to claim 15 , wherein the pressure of the atmosphere of the inert gas is reduced at a rate of between 5 psi/sec and 110 psi/sec in the step (c).
Claim 30
Dependent Claim
23 words
The method according to claim 15 , wherein the pores have a diameter in a range of between 5 nm and 80 nm.
Claim 31
Dependent Claim
23 words
The method according to claim 28 , wherein the pores have a diameter in a range of between 5 nm and 50 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-19 | 2005-05-21 | 2005-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-19 | 2009-05-21 | 2009-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-19 | 2013-05-21 | 2013-11-20 | $7700.00 | Window Closed / Lapsed |